Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Electromigration of In in amorphous indium-gallium-zinc-oxide thin film transistors under repeated switching operation was investigated by analyzing the distribution of component elements. During the repeated switching operations up to 300 times, threshold voltage of this device increased gradually implying alteration to the internal device structures. Energy dispersive X-ray spectroscopy revealed noticeable redistribution of metallic components, especially In, in the channel layer beneath the source electrode during switching operations by the migration of metallic ions away from the source electrode, which is attributed to electromigrations similar to those observed in organic light emitting diodes having indium tin oxide electrodes.     

Dithienylmethanone‐Based Cross‐Conjugated Polymer Semiconductors: Synthesis,Characterization, and Application in Field‐Effect Transistors

Herein, we report the synthesis, characterization, and field‐effect properties of two cross‐conjugated dithienylmethanone (DMO)‐based alternating polymers, namely, PDMO‐S and PDMO‐Se . Both polymers possess high thermal stability, good solubility, and broad absorption spectra. Their electrochemical properties were investigated using cyclic voltammetry, indicating that PDMO‐Se has higher HOMO/LUMO energy levels of −5.49/−3.49 eV than −5.57/−3.58 eV of PDMO‐S . The two polymers exhibited promising charge transport properties with the highest hole mobility of 0.12 cm² V⁻¹ s⁻¹ for PDMO‐S and 0.025 cm² V⁻¹ s⁻¹ for PDMO‐Se . AFM and 2D‐GIXRD analyses demonstrated that the PDMO‐S formed lamellar, edge‐on packing thin film with close π‐π stacking. These findings suggest that cross‐conjugated polymers might be potential semiconducting materials for low‐cost and flexible organic electronics. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 1012–1019     

Quinoid-Aromatic Resonance for Very Small Optical Energy Gaps in Small-Molecule Organic Semiconductors: A Naphthodithiophenedione-oligothiophene Triad System

Organic semiconductors with very small optical energy gaps have attracted a lot of attention for near-infrared-active optoelectronic applications. Herein, we present a series of donor-acceptor-donor (D−A−D) organic semiconductors consisting of a highly electron-deficient naphtho[1,2-b:5,6-b′]dithiophene-2,7-dione quinoidal acceptor and oligothiophene donors that show very small optical energy gaps of down to 0.72 eV in the solid state. Investigation of the physicochemical properties of the D−A−D molecules as well as theoretical calculations of their electronic structures revealed an efficient intramolecular interaction between the quinoidal acceptor and the aromatic oligothiophene donors in the D−A−D molecules; this significantly enhances the backbone resonance and thus reduces the bond length alternation along the π-conjugated backbones. Despite the very small optical energy gaps, the D−A−D molecules have low-lying frontier orbital energy levels that give rise to air-stable ambipolar carrier transport properties with hole and electron mobilities of up to 0.026 and 0.043 cm² V⁻¹ s⁻¹, respectively, in field-effect transistors.     

Supramolecular Assemblies for Electronic Materials

This work presents a synergy between organic electronics and supramolecular chemistry, in which a host–guest complex is designed to function as an efficacious electronic material. Specifically, the noncovalent recognition of a fullerene, phenyl-C₆₁-butyric acid methyl ester ( PC₆₁BM ), by an alternating perylene diimide ( P )-bithiophene ( B ) conjugated macrocycle ( PBPB ) results in a greater than five-fold enhancement in electron mobility, relative to the macrocycle alone. Characterization and quantification of the binding of fullerenes by host PBPB is provided alongside evidence for intermolecular electronic communication within the host–guest complexes.     

Molecular Acceptors Based on a Triarylborane Core Unit for Organic Solar Cells

Triarylboranes that exhibit p–π* conjugation serve as versatile building blocks to design n-type organic/polymer semiconductors. A series of new molecular acceptors based on triarylborane is reported here. These molecules are designed with a boron atom that bears a bulky 2,4,6-tri-tert-butylphenyl (Mes*) substituent at the core and strong electron-withdrawing 2-(3-oxo-2,3-dihydroinden-1-ylidene)malononitrile (IC) units as the end-capping groups that are linked to the core by bithiophene bridges. Butyl or butoxy groups are introduced to the bithiophene units to tune the optoelectronic properties. These molecules show nearly planar backbones with highly localized steric hindrance at the core, low LUMO/HOMO energy levels, and broad absorption bands spanning the visible region, which are all very desirable characteristics for use as electron acceptors in organic solar cell (OSC) applications. The attachment of butyl groups to the bithiophene bridges brings about a slightly twisted backbone, which in turn promotes good solubility and homogeneous donor/acceptor blend morphology, whereas the introduction of butoxy groups leads to improved planarity, favorable stacking in the film state, and a greatly reduced band gap. OSC devices based on these molecules exhibit encouraging photovoltaic performances with power conversion efficiencies reaching up to 4.07 %. These results further substantiate the strong potential of triarylboranes as the core unit of small molecule acceptors for OSC applications.     

Thermoelectric properties of stannite-phase CuZn2AS4 (CZAS; A=Al,Ga and In) nanocrystals for solar energy conversion applications

The current study aimed to comprehensively investigate structural, electronic, optical and transport properties of quaternary semiconductor CuZn₂AS₄ (CZAS; A=Al, Ga and In) nanocrystals (NCs). Based on energy considerations, the stannite structure (I-42m; No. 121) is found to be more stable than the kesterite (I-4; No.82) and wurtzite (P6₃mc; No.186) type structures. By means of hybrid functional calculations, these nanocrystals have direct band gap of 0.81–1.71 eV with a high absorption coefficient of >10⁴ cm^?1, which are well-suited for use in solar energy-conversion applications. Some of the latest advances in applications of these nanocrystals in thermoelectric applications are also highlighted in the current study. It is observed that transport coefficients of these materials are found to be nearly direction independent and isotropic. All three samples are p-type conductors at room temperature. Especially, the Seebeck coefficient of CuZn₂AlS₄ is even larger than that of CuZn₂GaS₄ and CuZn₂InS₄ under the studied carrier concentration and temperature region. The maximum figure of merit (ZT) reaches 0.982 (0.977), 0.984 (0.974) and 0.53 (0.955) for p-type (n-type) CuZn₂AlS₄, CuZn₂GaS₄, and CuZn₂InS₄, respectively, at 300 K. The high Seebeck coefficients, high figure of merit and low thermal conductivities make these systems good candidates for high-efficiency thermoelectric conversion applications.     

Approaching the Integer‐Charge Transfer Regime in Molecularly Doped Oligothiophenes by Efficient Decarboxylative Cross‐Coupling

A library of symmetrical linear oligothiophene was prepared employing decarboxylative cross‐coupling reaction as the key transformation. Thiophene potassium carboxylate salts were used as cross‐coupling partners without the need of co‐catalyst, base, or additives. This method demonstrates complete chemoselectivity and is a comprehensive greener approach compared to the existing methods. The modularity of this approach is demonstrated with the preparation of discreet oligothiophenes with up to 10 thiophene repeat units. Symmetrical oligothiophenes are prototypical organic semiconductors where their molecular electrical doping as a function of the chain length can be assessed spectroscopically. An oligothiophene critical length for integer charge transfer was observed to be 10 thiophene units, highlighting the potential use of discrete oligothiophenes as doped conduction or injection layers in organic electronics applications.