Heptagon‐Embedded Pentacene: Synthesis,Structures, and Thin‐Film Transistors of Dibenzo[d,d′]benzo[1,2‐a:4,5‐a′]dicycloheptenes

This study presents a new class of conjugated polycyclic molecules that contain seven‐membered rings, detailing their synthesis, crystal structures and semiconductor properties. These molecules have a nearly flat C₆‐C₇‐C₆‐C₇‐C₆ polycyclic framework with a p‐quinodimethane core. With field‐effect mobilities of up to 0.76 cm² V^?1 s^?1 as measured from solution‐processed thin‐film transistors, these molecules are alternatives to the well‐studied pentacene analogues for applications in organic electronic devices.     

Luminous Butterflies: Efficient Exciton Harvesting by Benzophenone Derivatives for Full‐Color Delayed Fluorescence OLEDs

Butterfly‐shaped luminescent benzophenone derivatives with small energy gaps between their singlet and triplet excited states are used to achieve efficient full‐color delayed fluorescence. Organic light‐emitting diodes (OLEDs) with these benzophenone derivatives doped in the emissive layer can generate electroluminescence ranging from blue to orange–red and white, with maximum external quantum efficiencies of up to 14.3 %. Triplet excitons are efficiently harvested through delayed fluorescence channels.     

二氧化锡薄膜:制备及在室温下气敏性质(英文)

利用溶胶-凝胶法首先在玻璃基片上制备了氧化锡晶种膜,之后采用溶剂热法在其上生长了致密的氧化锡薄膜。利用扫描电子显微镜和X射线衍射技术对氧化锡薄膜的形貌和晶体结构进行了表征,结果表明构成薄膜的氧化锡晶粒具有四方锡石结构,尺寸在7~10 nm之间。表面活性剂在溶剂热反应过程中对薄膜生长的研究表明,十二烷基苯磺酸钠可以显著提高薄膜的质量。对所制备的氧化锡薄膜进了气敏性质研究,结果表明,在温和的测试条件下,如室温、常压、干燥的空气背景等,该氧化锡薄膜对二氧化氮气体具有良好的探测能力,检测限为0.5μL·L-1。     

非晶Ce-Ti氧化物用于NH3选择性催化还原NO的原位红外研究

采用原位红外光谱研究了在具有短程有序Ce-O-Ti结构的非晶Ce-Ti氧化物上NH₃选择性催化还原（SCR） NO_x反应. 在反应条件下,催化剂表面主要被NH₃吸附物种覆盖,而检测不到NO_x吸附物种. 经测定,NO的反应级数为0.5-0.6,表明Langmuir-Hinshelwood机理和Eley-Rideal机理同时存在. 可能的机理是NH₃吸附物种和弱吸附的NO_x反应,生成NH_yNO₃ （y = 0-4）活性中间物种,并通过GAUSSIAN计算和原位红外结果证实了它们的存在. Ce-O-Ti结构中Ce与Ti之间表现出原子尺度的相互作用,所以在SCR反应的活性温度窗口下,催化剂的氧化还原活性提高.     

Phase diagram of P3HT:PC70BM thin films based on variable-temperature spectroscopic ellipsometry

In this article, we present the research on the influence of the composition of thin films of a blend of poly (3-hexylthiophene −2,5-diyl) - P3HT with fullerene derivatives [6,6]-phenyl-C71-butyric acid methyl ester – PC70BM and [6,6]-phenyl-C61-butyric acid methyl ester – PC60BM on their thermal transitions. The influence of molar mass (Mw) of P3HT (Mw = 65.2; 54.2 and 34.1 kDa) and PCBM (PC60BM – Mw = 911 g/mol and PC70BM – Mw = 1031 g/mol) is examined in details. The article presents significantly expanded research compared to our previous work on thermal transitions in thin films of blend P3HT (Mw = 65.2 kDa) with PC60BM. For this reason, we also compare current results with previous ones. Here, we present for the first time a phase diagram of thin films of the P3HT(Mw = 65.2 kDa):PC70BM blend using variable-temperature ellipsometry. Our research reveals the presence of characteristic temperatures of pure phases in thin films of P3HT: PCBM blends. It turns out that the cold crystallization temperature of the P3HT phase in P3HT(Mw = 65.2 kDa):PC70BM blend films is lower than corresponding temperature in P3HT(Mw = 65.2 kDa):PC60BM blend films. At the same time, the cold crystallization temperature of the PC70BM phase behaves inversely. We demonstrate also that variable-temperature spectroscopic ellipsometry is a very sensitive technique for studying thermal transitions in these thin films. In addition, we show that the entire phase diagram can be determined based on the raw ellipsometric data analysis, e.g. using a delta angle at wavelength λ = 280 nm.     

Anisotropic charge carrier transport of optoelectronic functional selenium-containing organic semiconductor materials

Organic semiconductors (OSCs) materials are currently under intense investigation because of their potential applications such as organic field-effect transistors, organic photovoltaic devices, and organic light-emitting diodes. Inspired by the selenization strategy can promote anisotropic charge carrier migration, and selenium-containing compounds have been proved to be promising materials as OSCs both for hole and electron transfer. Herein, we now explore the anisotropic transport properties of the series of selenium-containing compounds. For the compound containing Se Se bond, the Se Se bond will break when attaching an electron, thus those compounds cannot act as n-type OSCs. About the different isomer compounds with conjugated structure, the charge transfer will be affected by the stacking of the conjugated structures. The analysis of chemical structure and charge transfer property indicates that Se-containing materials are promising high-performance OSCs and might be used as p-type, n-type, or ambipolar OSCs. Furthermore, the symmetry of the selenium-containing OSCs will affect the type of OSCs. In addition, there is no direct relationship between the R groups with their performance, whether it or not as p-type OSCs or n-types. This work demonstrates the relationship between the optoelectronic function and structure of selenium-containing OSCs materials and hence paves the way to design and improve optoelectronic function of OSCs materials.     

The Effect of α-Branched Side Chains on the Structural and Opto-Electronic Properties of Poly(Diketopyrrolopyrrole-alt-Terthiophene)

Introducing solubilizing α-branched alkyl chains on a poly(diketopyrrolopyrrole-alt-terthiophene) results in a dramatic change of the structural, optical, and electronic properties compared to the isomeric polymer carrying β-branched alkyl side chains. When branched at the α-position the alkyl substituent creates a steric hindrance that reduces the tendency of the polymer to π–π stack and endows the material with a much higher solubility in common organic solvents. The wider π–π stacking and reduced tendency to crystallize, evidenced from grazing-incidence wide-angle X-ray scattering, result in a wider optical band gap in the solid state. In solar cells with a fullerene acceptor, the α-branched isomer affords a higher open-circuit voltage, but an overall lower power conversion efficiency as a result of a too well-mixed nanomorphology. Due its reduced π–π stacking, the α-branched isomer fluoresces and affords near-infrared light-emitting diodes emitting at 820 nm.     

CdS纳米晶@碳点复合物膜的电致化学发光

采用热解柠檬酸法制备碳点(CDs),并将之与表面无包裹剂的CdS纳米晶(CdS NCs)超声复合制备CdS纳米晶@碳点(CdS NCs@CDs)复合物。研究了复合物膜阴极电致化学发光(ECL),探讨了CDs对CdS纳米晶膜ECL增强的机理。CDs分散性良好、尺寸在1.5~4 nm之间;与粒径约为4 nm的CdS纳米晶按体积比2∶3复合后,在360 nm光激发下复合物具有最强的荧光发射且表现为CDs的荧光。同时,复合物膜产生归属于激发态CdS纳米晶的最强的ECL发射,且ECL发光峰起置电势正移至-1.05 V。复合物膜的ECL发射是pH依赖的,在pH值为6时,复合物膜具有最大的ECL强度,为CdS纳米晶膜ECL强度的19倍。这种ECL增强源于CDs能束缚大量电子产生局域电场从而促进近邻CdS纳米晶激发态的形成与弛豫。     

A Dual‐Ligand Porous Coordination Polymer Chemiresistor with Modulated Conductivity and Porosity

Single‐ligand‐based electronically conductive porous coordination polymers/metal–organic frameworks (EC‐PCPs/MOFs) fail to meet the requirements of numerous electronic applications owing to their limited tunability in terms of both conductivity and topology. In this study, a new 2D π‐conjugated EC‐MOF containing copper units with mixed trigonal ligands was developed: Cu₃(HHTP)(THQ) (HHTP=2,3,6,7,10,11‐hexahydrotriphenylene, THQ=tetrahydroxy‐1,4‐quinone). The modulated conductivity (σ≈2.53×10^?5 S cm^?1 with an activation energy of 0.30 eV) and high porosity (ca. 441.2 m² g^?1) of the Cu₃(HHTP)(THQ) semiconductive nanowires provided an appropriate resistance baseline and highly accessible areas for the development of an excellent chemiresistive gas sensor.     

High Compression‐Induced Conductivity in a Layered Cu–Br Perovskite

We show that the onset pressure for appreciable conductivity in layered copper‐halide perovskites can decrease by ca. 50 GPa upon replacement of Cl with Br. Layered Cu–Cl perovskites require pressures >50 GPa to show a conductivity of 10^?4 S cm^?1, whereas here a Cu–Br congener, (EA)₂CuBr₄ (EA=ethylammonium), exhibits conductivity as high as 2×10^?3 S cm^?1 at only 2.6 GPa, and 0.17 S cm^?1 at 59 GPa. Substitution of higher‐energy Br 4p for Cl 3p orbitals lowers the charge‐transfer band gap of the perovskite by 0.9 eV. This 1.7 eV band gap decreases to 0.3 eV at 65 GPa. High‐pressure X‐ray diffraction, optical absorption, and transport measurements, and density functional theory calculations allow us to track compression‐induced structural and electronic changes. The notable enhancement of the Br perovskite's electronic response to pressure may be attributed to more diffuse Br valence orbitals relative to Cl orbitals. This work brings the compression‐induced conductivity of Cu‐halide perovskites to more technologically accessible pressures.