Volumetric and infrared measurements on amorphous ice structure

We have simultaneously used adsorption isotherm volumetry and Fourier transform infrared spectroscopy in order to take the investigations on amorphous ice structure a step further, especially concerning porosity and annealing-induced modifications. We have studied surface reorganization during annealing and found that the number of surface sites decreases before crystallization, their relative ratios being different for amorphous and crystalline ice. We also present results confirming that ice can have a large specific surface area and nevertheless be non-microporous.     

Organometallic chemistry related to applications for microelectronics in Japan

This is meant to be a brief overview of the developments of research activities in Japan on organometallic compounds related to their use in electronic and optoelectronic devices. The importance of organometallic compounds in the deposition of metal and semiconductor films for the fabrication of many electronic and opto-electronic devices cannot be exaggerated. Their scope has now extended to thin-film electronic ceramics and high-temperature oxide superconductors. A variety of organometallic compounds have been used as source materials in many types of processing procedures, such as metal–organic chemical vapor deposition (MOCVD), metalorganic vapor-phase epitaxy (MOVPE), metal–organic molecular-beam epitaxy (MOMBE), etc. Deposited materials include silicon, Group III–V and II–VI compound semiconductors, metals, superconducting oxides and other inorganic materials. Organometallic compounds are utilized as such in many electronic and optoelectronic devices; examples are conducting and semiconducting materials, photovoltaic, photochromic, electrochromic and nonlinear optical materials. This review consists of two parts: (I) research related to the fabrication of semiconductor, metal and inorganic materials; and (II) research related to the direct use of organometallic materials and basic fundamental research.     

Simple synthesis of aminoquinoline/ethylaniline copolymer semiconducting nanoparticles

Pure copolymer nanoparticles from 8-aminoquinoline (AQ) and 2-ethylaniline (EA) were easily synthesized by a chemically oxidative polymerization in three different aqueous media. The potential and temperature of polymerization solution were used to successfully follow the polymerization progress. The molecular and morphological structures of the resulting AQ/EA copolymer particles were systematically characterized by IR, UV/Vis, NMR, gel permeation chromatography, laser particle-size analysis, atomic force and transmission electron microscopy. The oxidation potential of the monomers as well as the polymerization yield, structure, and properties of the particles were found to significantly depend on AQ/EA ratio, polymerization temperature and medium. It is surprisingly found that AQ homopolymerization and AQ/EA (50:50) copolymerization at 5 degrees C in HCl simply afford nano-ellipsoids with the major/minor axis diameters of 24/14 nm and 80/67 nm, respectively. A simple method of synthesizing semiconducting pure nanoparticles by introducing the AQ units with positively charged quaternary ammonium groups but in the absence of adscititious stabilizer or sulfonic substituent on the monomers is established first. Both the molecular weight and bulk electroconductivity of the copolymers exhibit a maximum at AQ content of 10 mol %. The solubility and film formability of the copolymers are good in highly polar solvents and reach the optimal at the AQ content of 20 and 10 mol %, respectively.     

Complete suppression of metastable phase and significant enhancement of magnetic properties of B-rich PrFeB nanocomposites prepared by devitrifying amorphous ribbons

The effect of refractory element addition on phase transformation, crystallization behavior and magnetic properties of Pr_8.5Fe_81.5B₁₀ (addition-free) and Pr_8.5Fe_81.5M₂B₁₀ (M=V, Cr, Nb, Zr, Ti) ribbons has been investigated. The annealed addition-free ribbon as well as the samples with V or Cr additions are mainly composed of the metastable Pr₂Fe₂₃B₃ phase, whereas annealed ribbons with Nb, Zr or Ti additions primarily consist of Pr₂Fe₁₄B and a minor amount of Fe₃B/boride. The complete suppression of the metastable Pr₂Fe₂₃B₃ phase due to Nb, Zr or Ti additions leads to a significant enhancement of the magnetic properties. For example, the remanence, the coercivity and the energy product are remarkably increased from 2.5 kG, 0.4 kOe and 0.2 MG Oe for the addition-free material to 9.2 kG, 4.7 kOe and 7.6 MG Oe for the specimens with Nb addition. The successful elimination of the metastable Pr₂Fe₂₃B₃ phase is believed to profit from two factors: (a) Nb, Zr or Ti atoms substitute the Pr site, comparatively increase the Pr content, and thus inhibit the nucleation of Pr-lean Pr₂Fe₂₃B₃ phases, and (b) the formation of Nb, Zr, or Ti borides consumes some part of B, which hinders the generation of the B-rich Pr₂Fe₂₃B₃ phase.     

Microstructures and soft magnetic properties of Fe80P20-xSix (x = 4.5–6.5) amorphous ribbons

Fe-based amorphous ribbons with excellent soft magnetic properties and mechanical properties were prepared in the Fe–Si–P ternary system. Enhanced soft magnetic properties could be achieved through annealing treatment of the ribbons for 1 h at 325 °C, which is far below the glass transition temperatures (462–474 °C). Icosahedral medium-range ordering with a size range of around 2 nm occurred throughout the amorphous matrix during the low-temperature annealing treatment. The annealed ribbons exhibited improved magnetic saturation of over 185 emu/g while maintaining good mechanical flexibility. During icosahedral ordering, the distance between the Fe atoms and the coordination number within the amorphous ribbon can be optimised for achieving high magnetic saturation. However, nanocrystallisation of the SiP and Fe₂P transition phases embedded within the amorphous matrix occurred after the annealing treatment for 1 h at 385 °C, which caused deterioration of the soft magnetic properties and mechanical flexibility of the ribbons. Therefore, the combination of high magnetic saturation and mechanical flexibility of the amorphous ribbons could be optimised through low-temperature annealing treatment without any nanocrystallisation.     

Propagation and collision of soliton rings in quantum semiconductor plasmas

The intrinsic localization of electrostatic wave energies in quantum semiconductor plasmas can be described by solitary pulses. The collision properties of these pulses are investigated. In the present study, the fundamental model includes the quantum term, degenerate pressure of the plasma species, and the electron/hole exchange–correlation effects. In cylindrical geometry, using the extended Poincaré–Lighthill–Kuo (PLK) method, the Korteweg–de Vries (KdV) equations and the analytical phase shifts after the collision of two soliton rings are derived. Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. In addition, the degenerate pressure terms of electrons and holes have strong impact on the phase shift. The present theory may be useful to analyze the collision of localized coherent electrostatic waves in quantum semiconductor plasmas.     

Suspension plasma sprayed composite coating using amorphous powder feedstock

Al₂O₃-ZrO₂ composite coatings were deposited by the suspension plasma spray process using molecularly mixed amorphous powders. X-ray diffraction (XRD) analysis shows that the as-sprayed coating is composed of α-Al₂O₃ and tetragonal ZrO₂ phases with grain sizes of 26 nm and 18 nm, respectively. The as-sprayed coating has 93% density with a hardness of 9.9 GPa. Heat treatment of the as-sprayed coating reveals that the Al₂O₃ and ZrO₂ phases are homogeneously distributed in the composite coating.     

Electronic properties close to Dirac cone in two-dimensional organic conductor α-(BEDT-TTF)<Subscript>2</Subscript>I<Subscript>3</Subscript>

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, α-(BEDT-TTF)₂I₃ salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the ZGS is analyzed in detail and the electronic properties are examined in the vicinity of the Dirac point where the conduction and valence bands degenerate to form the zero-gap. The eigenvectors of the energy band have four components of respective sites, where two of them correspond to inequivalent sites and the other two correspond to equivalent sites. It is shown that the former exhibits an exotic momentum dependence around the contact point and the latter shows almost a constant dependence. The density of states of each site close to the Dirac point is calculated to demonstrate the temperature dependence of the local magnetic susceptibility and the local nuclear magnetic relaxation rate. Further, the robust property of the ZGS against the anion potential is also shown by using the second-order perturbation.     

Reviews

Abstract

Biological Effects of Radiations Daniel S. Grosch Blaisdell Publishing Co., New York, 1965, 293 pages. $3.50

Ion Bombardment of Solids G. Carter and J. S. Colligon American Elsevier Publishing Company, Inc., New York, 1968, 446 pages. $40.00     

C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures

We studied influence of rapid thermal annealing on electrical parameters of SF₆ plasma treated AlGaN/GaN heterostructures. The main emphasis by the evaluation was laid on C-V measurement and simulation, but also I-V and SIMS measurement were used. It was found that the diminished sheet carrier concentration of a two-dimensional electron gas after plasma treatment recovered significantly at the temperature of 500 °C. By using C-V measurement, it was possible to assess besides the changes of the two-dimensional electron gas concentration after annealing also the changes in the Schottky barrier heights and to find out the doping concentration in AlGaN barrier and GaN channel layer. The trend in Schottky barrier height changes after annealing was confirmed also by I-V measurement.