Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.     

CO2置换CH4水合物实验研究进展

全面总结了目前CO2置换CH4水合物中CH4实验研究进展。首先从水合物结构角度出发讨论置换的可能性及置换效率;而后分别从热力学和动力学角度探讨置换反应机理;最后设计并优化了实验系统。作者认为探明置换内在机理是未来置换法开采水合物能源技术发展的关键。     

1.65μm附近CH4分子高分辨率吸收光谱研究

采用连续可调谐二极管半导体激光器为探测光源,以可调怀特型长光程多通池(46.36～1158.90m)作为吸收池,采用直接吸收的方法,探测了室温下1.65μm附近CH4分子的高分辨率吸收光谱。在6043.00～6053.72cm-1范围内探测了5组不同压力和光程下的吸收光谱,观测到了259条线新的CH4分子吸收谱线,实验数据用Gaussian线型进行拟合,得到了这些吸收谱线的线强、线位置以及线强的标准偏差值,并对光谱中难以分辨的吸收谱线进行了分析。探测得到的最小谱线线强是4.3×10-27cm-1·(molcule·cm-2)-1,吸收谱线线强大于3.0×10-24cm-1·(mol·cm-2)-1由于吸收饱和而未被处理,同时所测得的光谱也显示出CH4分子在1.65μm附近有非常丰富的弱吸收谱线和复杂的结构。文中所报道的吸收谱线都是HITRAN2004数据库中所未报道的,而且也未见有其他文献报道过。     

FR4相对电容率测量实验设计

采用由微带线与射频信号源、频谱分析仪构成的简易实验装置,可准确测量出FR4介质板的相对电容率,降低了射频电路或微带天线设计实验的成本.     

Diode-pumped Q-switched Nd:GdVO4/KTP green laser formed with a flat–flat resonator

A diode-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green laser formed with a flat–flat resonator was demonstrated. 3.05 W of average green output power at pulse repetition frequency (PRF) of 40 kHz was obtained with an optical conversion efficiency of 18.4%, the effective intracavity frequency-doubling efficiency was 57%. At the incident pump power of 15 W, the shortest laser pulse occurred at PRF of 25 kHz with FWHM width of 14 ns, yielding the highest peak power of 7.44 kW; while the largest pulse energy of 0.14 mJ was achieved at PRF of 15 kHz.     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

Observations on the role of MgCl2 in the Weissler reaction

Aqueous solutions of Nal containing CCl₄ and MgCl₂ at various concentrations were irradiated under air with 1 MHz ultrasound and the yield of I₃⁻ was determined. The yield was not affected by MgCl₂ at concentrations up to 0.1 M. This contrasts with the finding of Lepoint and co-workers, who reported a sharp minimum in the yield at a MgCl₂ concentration of 2.5 × 10⁻³M, the yield decreased to 60% at 1 M MgCl₂, the reason being the lower solubility of CCl₄ at high MgCl₂ concentrations. In the absence of CCl₄, another dependence on the MgCl₂ concentration was observed: the yield was not affected up to 1 M, and at higher MgCl₂ concentrations the yield rapidly decreased owing to the increased viscosity of the solution. On the basis of these observations, there is no strong reason to postulate an electrical mechanism for the initiation of chemical reactions in the cavitation bubbles.     

Improving Cu2ZnSnS4 (CZTS) solar cell performance by an ultrathin ZnO intermediate layer between CZTS absorber and Mo back contact

The effects of an ultrathin ZnO intermediate layer deposited at the CZTS/Mo interface on CZTS solar cell performance have been investigated in this work. The ZnO layer inhibits the generation of MoS₂ layer and the formation of voids in the CZTS absorber. Consequently, the incorporation of this layer reduces the series resistance and increases the shunt resistance, which boosts photovoltaic conversion efficiency from 1.13% to 4.3%. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of boric acid on structure,morphology and luminescent properties of divalent europium doped calcium aluminate phosphors

Blue phosphors Ca_1 − xAl₂O₄: xEu²⁺ were prepared by high temperature solid-state method. Their structure, morphology and luminescent properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectroscopy. The effect of different amounts of fluxing agent H₃BO₃ on structure, morphology and luminescent properties of blue phosphors Ca_1 − xAl₂O₄: xEu²⁺ luminous intensity caused by different amount of H₃BO₃ was also investigated. The amount of H₃BO₃ doped Ca_1 − xAl₂O₄: xEu²⁺ in optimal luminous intensity had been determined. The results showed that both the excitation and emission spectra of samples were all broad bands, and that the peak of emission spectra was near 442 nm, which was corresponding to the 4f⁶5d → 4f⁷ transition of Eu²⁺ illuminating blue light. Ca_1 − xAl₂O₄: xEu²⁺ (x = 3.5 mol%) could be gained with good morphology and the best luminous intensity when H₃BO₃ mass ratio was 0.5 wt%.     

变化电压下扩散限制电解沉淀过程对铜的分形维数的影响

研究了铜的二维电解沉淀物在限制条件下的分形维数.拍摄了铜沉淀物随时间变化的照片,使用盒维法分析了各种条件下的豪斯多夫分形维数,并建立了计算机评估模型,以证明电压对豪斯多夫维数的重要影响.根据照片显示沉淀物的欧几里德几何形状也有着规则的变化.