Nonlinearity of InP-Doped Fibers

By combining nano-technology with fiber technology, an optical fiber doped with semiconductor nano-particles as InP is fabricated by using the modified chemical vapor deposition （MCVD） method. Proved by experiment, the fiber has excellent waveguide characteristics, and the concentration of InP is approximately 0.1~o. By using a scanning electron microscope, a stereo-scan photograph of the fiber is obtained, and based on the graph, presentations of the fiber under both magnetic and electronic fields are simulated, the effective core area Aeff≈ 10μm^2 is calculated, and so is the nonlinear index γ = 10.53 W^-1/Km of the fiber. This research leads a new method of high nonlinearity fiber fabrication.     

Generation of 170-fs Laser Pulses at 1053nm by a Passively Mode-Locked Yb:YAG Laser

A novel method is developed to obtain 1.05μm laser operation with a Yb：YAG laser. By using a Yb：YAG crystal with proper length and doping concentration, a femtosecond Yb： YAG laser is realized at the central wavelength of 1053nm. The measured pulse duration and spectral bandwidth （FWHM） are 170fs and 7nm; the repetition rate is 80 MHz. Under a power pump of 2 W, an average mode-locking power of 180mW is achieved.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Transient Reorientation of a Doped Liquid Crystal System under a Short Laser Pulse

The transient optical nonlinearity of a nematic liquid crystal doped with azo-dye DR19 is examined. The optical reorientation threshold of a 25-μm-thick planar-aligned sample of 5CB using a 50 ns pulse duration 532nm YAG laser pulse is observed to decrease from 800 mJ/mm^2 to 0.6 mJ/mm^2 after the addition of i vol% azo dopant, a reduction of three orders of magnitude. When using a laser pulse duration of 10ns, no such effect is observed. Experimental results indicate that the azo dopant molecules undergo photoisomerization from trans-isomer to cis-isomer under exposure to light, and this conformation change reorients the 5CB molecules via intermolecular coupling between guest and host. This guest-host coupling also affects the azo photoisomerization process.     

Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared by MOCVD

Reproducible p-type phosphorus-doped ZnO （p-ZnO：P） films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole concentration of 9.02 × 10^17 cm ^-3, a mobifity of 1.05 cm^2 /Vs, and a resistivity of 6.6 Ω.cm. Obvious acceptorbound-exciton-related emission and P-induced zinc vacancy （Vzn） emission are observed by low-temperature photoluminescence spectra of the films, and the acceptor binding energy is estimated to be about 125meV. The local chemical bonding environments of the phosphorus atoms in the ZnO are also identified by x-ray photoelectron spectra. Our results show direct experimental evidence that Pzn-2Vzn shallow acceptor complex most likely contributes to the p-type conductivity of ZnO：P films.     

Upper Critical Fields and Anisotropy of BaFe1.9Ni0.1As2 Single Crystals

Temperature dependence of the upper critical magnetic field （Hc2） near Tc of 20 K in a BaFe1.9 Ni0.1 As2 single crystal is determined via magneto-resistance measurements, for the out-plane （H ⊥ab） and in-plane （H ｜｜ ab） directions in magnetic fields of up to 8 T. The upper critical fields at zero temperature estimated by the Werthamer-Helfand- Hohenberg （WHH） formula are μ0H^｜｜ c2（0） = 137 T and μ0H⊥c2（0） = 51 T, both exceeding the weak-coupling Pauli paramagnetic limit （μ0Hp = 1.84Tc）. However, the WHH formula could overestimate the μ0H^｜｜12（0） value. The anisotropy of upper critical fields is around 3 in the temperature range close to Tc. The result is very similar to the Co-doped 122 superconductor BaFe2-x Cox As2, indicating that electron-doped 122 superconductors exhibit similar superconducting properties.     

Hydrothermal Synthesis and Vacuum Ultraviolet-Excited Luminescence Properties of Novel Dy^3＋-doped GdPO4 White Light Phosphors

Novel Dy^3＋-doped GdPO4 white light phosphors with a monoclinic system are successfully synthesized by the hydrothermal method at 240℃. The strong absorption at around 147nm in the excitation spectrum is assigned to the host absorption. It is suggested that the vacuum ultraviolet excited energy is transferred from the host to the Dy^3＋ ions. The f - d transition of the Dy^3＋ ion is observed to be located at 182nm, which is consistent with the calculated value using Dorenbos＇s expression. Under 147nm excitation, Gd0.92PO4：0.08Dy^3＋ phosphor exhibits two emission bands located at 572 nm （yellow） and 478 nm （blue）, which correspond to the hypersensitive transitions ^4 F9/2-^6 H13/2 and ^4 F9/2-^6 H15/2. The two emission bands lead to the white light. Because of the strong absorption at about 147nm, Gd0.92PO4：0.08Dy^3＋ under vacuum ultraviolet excitation is an effective white light phosphor, and has promising applications to mercury-free lamps.     

Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires

We report a preferential growth of boron carbide nanowires with a five-fold twinned internal structure. The nanowires are found to grow catalytically via iron boron nanoparticles, but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines. We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes, followed by rapid spreading of atomic steps. This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.     

导电聚吡咯的研究

介绍了1995年获国家自然科学二等奖项目“导电聚吡咯的研究”（主要完成人：钱人元、李永舫、毕先同、裴启兵、鄢宝珍）的主要研究成果以及获奖后的研究新进展,涉及的研究内容包括导电聚吡咯的电化学聚合过程和机理、导电聚吡咯的结构、稳定性、电化学性质以及导电聚吡咯复合材料的制备等。     

采用紫外光提高双掺杂铌酸锂晶体中全息记录的灵敏度和光栅强度

提出了一种在双掺杂铌酸锂晶体中用调制的双紫外光进行非挥发全息记录的方法。与通常的用紫外光敏化的非挥发全息记录相比,这种方法可以大幅度地提高光栅强度和记录灵敏度。联立双中心物质方程和双光束耦合波方程,数值分析了光栅强度和衍射效率随时间的变化并讨论了掺杂浓度和记录光强对紫外光非挥发全息记录机制下光折变效应的影响。研究发现,紫外光记录得到的深浅中心的光栅具有相同的相位,总的光栅（深浅中心光栅的叠加）强度为两光栅强度之和,固定过程中深中心的光栅得到增强;增大深浅中心掺杂的浓度可以提高光栅强度,增大记录紫外光的光强可以增加光栅的强度和记录灵敏度。理论模拟可以证实并预测实验结果。