Bi4(Ti1/3Sn2/3)3O12掺杂BaTiO3基X8R陶瓷微观结构与介电性能

研究了Bi4(Ti1/3Sn2/3)3O12掺杂对钛酸钡基陶瓷微观结构和介电性能影响。结果表明,掺杂Bi4(Ti1/3Sn2/3)3O12后钛酸钡基陶瓷晶粒明显长大,同时烧结温度可由1 280℃降低至1 180℃。系统的介电性能和Bi4(Ti1/3Sn2/3)3O12的掺杂量有密切关系。当Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%,体系的居里峰被明显压低和展宽,当掺杂量为2mol%时居里峰变得不明显。当Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%,系统的居里温度由131℃升高至139℃。当Bi4(Ti1/3Sn2/3)3O12的掺杂量为1mol%时,钛酸钡基陶瓷介电常数为1 930,介电常数温度变化率为5%(-55℃),13%(134℃),-8%(150℃),满足X8R标准。     

体系酸度对直接沉淀法合成钛酸钡的影响

钛酸钡是一种典型的具有钙钛矿型结构的电子陶瓷材料,具有优良的铁电、介电、压电与热释电、以及线性电光效应和非线性光学效应等特点,使其在现代电子技术与光电子技术领域获得了广泛的应用.     

High-frequency dielectric properties of BSTO ceramic prepared with hydrothermal synthesized SrTiO3 and BaTiO3 powders

BSTO dielectric ceramic was prepared from SrTi03 and BaTi03 powders synthesized by hydrothermal method, as well as from Bao.sSro.4TiO3 powder synthesized by conventional solid-state reaction. The former can be sintered at a relatively low temperature of 1120 ℃. Characterization by SEM showed that the grain shapes of both ceramics are cubical, though the grain size of the former is much smaller. Dielectric constants measured at 20℃ were shown to vary with frequency in the range from I kHz to 2 MHz and dc bias field, and further that the dielectric loss of the former to be less than 2 × 10^- 3 in the frequency range of 20 kHz to 1 MHz, much smaller than that of the latter sample. For the former, temperature dependence of dielectric constant is much flatter and there exists an extended phase transition diffusion covering a wide temperature range of Curie temperature To. The smaller grain size of the former depresses the dc bias electrical field dependence of dielectric constant. The tunability is 7% under a bias field of 0.6 kV/mm dc.     

CP@hBT-CNT/PDMS三相介电复合材料的制备与性能

基于卡波姆（CP）和羟基化钛酸钡（hBT）之间的相互作用,通过CP对hBT的包覆制备了“核-壳”结构CP功能化改性的hBT杂化粒子（CP@hBT）。以CP@hBT为陶瓷填料,氨基化碳纳米管（CNT）为导电填料,聚二甲基硅氧烷（PDMS）为基体,利用溶液共混法制备CP@hBTCNT/PDMS介电复合材料。系统研究了CP功能化改性对CP@hBT-CNT/PDMS微观形貌和介电性能的影响。结果表明,CP对hBT功能化改性后可以有效减少CP@hBT杂化粒子的沉降和团聚问题,增强了其在PDMS基体中的分散性。在1 000 Hz条件下,当w(CNT)=0.75%时,CP@hBT-CNT/PDMS复合材料的介电常数可以达到138,同时介电损耗仍较低。     

碳化硅单晶生长用高纯碳化硅粉体的研究进展

碳化硅(SiC)以其宽带隙、高临界击穿场强、高热导率、高载流子饱和迁移率等优点,被认为是目前较具发展前景的半导体材料之一。近年来,物理气相传输(PVT)法在制备大尺寸、高质量SiC单晶衬底方面取得了重大突破,进一步推动了SiC在高压、高频、高温电子器件领域的应用。SiC粉体是PVT法生长SiC单晶的原料,其纯度会直接影响SiC单晶的杂质含量,从而影响SiC单晶的电学性质,其中生长高质量的半绝缘SiC单晶更是直接受限于SiC粉体中N元素的含量。因此,合成高纯的SiC粉体是PVT法生长高质量SiC单晶的关键。本文主要介绍了高纯SiC粉体的合成方法及研究现状,重点对气相法和固相法合成高纯SiC粉体的优缺点进行了评述,并提出了今后高纯SiC粉体合成的发展方向。     

纳米ZrO2(CaO)复合粉体的制备研究

采用化学沉淀法合成了ZrO2(CaO)复合粉体,并讨论了反应条件对样品的影响,通过DTA、XRD、分光光度计等手段对产品进行了表征,结果表明:采用合适的合成条件可以得到粒度分布均匀、粒径约35.2nm的ZrO2(CaO)复合粉体,采用合适的CaCl2/ZrOCl2·8H2O的量比可以得到ZrO2(CaO)的完全固溶体.