新型薄膜电子材料——氢化非晶硅

 当今最重要的电子材料是半导体单晶硅,用它不但可制做各种二极管、三极管还可将成千上万个元件集成在一个小硅片上.从大型计算机到家用电器、儿童玩具,其核心部分都是用单晶硅做的集成电路.市场上需求多少半导体集成电路已经成为一个国家现代化水平的标志.单晶硅器件技术的发展一方面是不断提高单位芯片上的元件集成度,另一方面是向薄膜器件的新领域开拓.特别是在七十年代分子束外延技术出现以后,制做原子尺度的单晶薄膜已成现实.     

新型太阳能电池——染料敏化太阳能电池研制进展

能源问题是当今世界各国共同面临的严重问题;寻求低污染、可持续使用绿色能源是世界各国科学家共同关注的问题.太阳能不仅是地球几十亿年来,推动自然界种种演化的基本动力,也是当今人类实现可持续发展最可靠的能源,但是长期以来人们仅仅靠太阳自然照射状态下,通过植物吸收、风云雨雪变化利用太阳能,物理学的发展,尤其是半导体材料的创造,开创了人类用科技手段进行太阳能发电的道路.     

飞秒脉冲振幅和相位的无干涉条纹重构法测量

对作者所提出的无干涉条纹直接电场重构测量飞秒脉冲的振幅和相位的新方法作出进一步理论分析，并通过实验测量说明该方法的优越性.该方法克服了传统的SPIDER方法的弊病，能得到一组无干涉条纹的图像，排除传统方法必须使用傅里叶变换滤波消除干涉条纹而引进的系统误差，使得该方法能够采用较简便设备且能较准确测量飞秒脉冲强度轮廓和相位.最后给出同一条件下新方法和传统SPIDER方法分别重构的脉冲强度自相关曲线与实验测量结果的比较，以说明新方法的有效性和优越性.     

Electromagnetic tunneling through conjugated single-negative metamaterial pairs and double-positive layer with high-magnetic fields

We show that resonant tunneling of electromagnetic （EM） fields can occur through a six-layer structure con- sisting of two pairs of bilayer slabs： one＇being an epsilon-negative layer and the other being a mu-negative layer with a double-positive （DPS） medium and air. This type of tunneling is accompanied by high-magnetic field. The Poynting vector distributions and the material dissipation are studied. Our results demonstrate that the EM field in the structure is controlled flexibly by single-negative media and DPS slab. Therefore, this structure has potential applications in wireless energy transfer.     

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.     

Theoretical Study on Equation of State of Porous Mo and Sn

We present a first-principles scheme to investigate the equation of state （EOS） of porous materials, based on our recently developed modified mean-field potential approach. By taking the effect of the structural parameters on the free energy into account, we calculate the total energy of materials with initial different densities and then study the EOS of porous Mo and Sn as a prototype. The calculated results are in good agreement with the experimental data available, which demonstrates that our scheme is suitable for investigating EOS of porous materials over a wide r~nge of porosities and pressures.     

Material growth and device fabrication of terahertz quantum-cascade laser based on bound-to-continuum structure

The terahertz quantum-cascade laser （THz QCL） based on bound-to-continuum structure is demonstrated. The X-ray diffraction measurement of the material shows a high crystalline quality of the active region. A THz QCL device was fabricated with semi-insulating surface-plasmon waveguide. The test device is lasing at about 3 THz and operating up to 60 K. It shows a single frequency property under different drive currents and temperatures. At 9 K, the maximum output power is greater than 2 mW with a threshold current density of 159 A/cm2.     

小麦超弱延迟发光测试系统

应用一种新型高灵敏度光电倍增管作为传感器,设计一套用于检测小麦超弱发光的光子计数测量系统,实现对储藏小麦超弱发光的定量测量.适当安排LED阵列分布,设计适合延迟发光需要的照明系统,通过对白光LED光源辐射等效单光子能量和流明效率的计算,建立起光照度与光子数强度之间的联系,实现了光源照射强度与样品延迟发光强度之间的定量比较.对不同光照强度下小麦样品延迟发光的测试和双曲函数拟合,探讨了小麦超弱延迟发光双曲函数拟合参量的变化规律;发现不同照射强度下存在不同的饱和照射时间;小麦超弱延迟发光强度曲线符合双曲衰减规律,超弱延迟发光持续时间达数小时.通过对光照时间和数据采集时间的精确控制,以及在拟合函数中设置延迟时间参量因子,实现了延迟发光测试数据对应时间点的精确标定.     

离轴数字全息超分辨率记录系统优化设计

超分辨率数字全息记录系统可以突破系统分辨极限,提高系统分辨率。设计不同形式的超分辨率记录系统用CCD记录高频物光信息是目前一个活跃的研究领域。基于取样定理及衍射的角谱理论对超分辨率离轴数字全息记录系统的设计进行研究,研究表明,无论选择何种设计方案,超分辨率系统所形成的等效CCD的面阵尺寸存在一个优化值,当实际设计尺寸大于优化值时并不能进一步提高分辨率,使用优化值设计的记录系统最紧凑。基于研究结果,导出优化设计超分辨率离轴数字全息系统的方法,以分辨率测试板为物体,使用数字全息再现光场复振幅叠加的方法,给出不同等效CCD尺寸时的重建像。实验结果证明了理论分析的正确性及可行性。     

中国科学技术大学国际功能材料量子设计中心博士后、特任研究员/副研究员招聘启事

<正>国际功能材料量子设计中心(ICQD)成立于2008年,是一个依托于中国科学技术大学合肥微尺度物质科学国家实验室的研究实体。中心的使命是在量子信息和清洁能源两大领域促进理论与实验互动性合作的前瞻性研究,并促进国内外在这些领域的实质性合作与交流。更多信息请登录中心网站http://icqd.ustc.edu.cn。ICQD中心科学家张振宇(千人计划)、朱文光(青年千人计划)、乔振华(百人计划)三位教授的研究组,拟向国内外招聘凝聚态物理理论与计算领域的博士后、特任副研究员和特任研究