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81.
Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation 下载免费PDF全文
Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved. 相似文献
82.
83.
HANG Chao HUANG Guo-Xiang 《理论物理通讯》2006,46(1):149-154
We investigate the nonlinear localized structures of optical pulses propagating in a one-dimensional photonic crystal with a quadratic nonlinearity. Using a method of multiple scales we show that the nonlinear evolution of a wave packet, formed by the superposition of short-wavelength excitations, and long-wavelength mean fields, generated by the self-interaction of the wave packet, are governed by a set of coupled high-dimenslonal nonlinear envelope equations, which can be reduced to Davey-Stewartson equations and thus support dromionlike high-dimensional nonlinear excitations in the system. 相似文献
84.
Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu 下载免费PDF全文
The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics (MD) simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation. 相似文献
85.
Wei-nan E Ping-bing Ming 《应用数学学报(英文版)》2007,23(4):529-550
We study continuum and atomistic models for the elastodynamics of crystalline solids at zerotemperature.We establish sharp criterion for the regime of validity of the nonlinear elastic wave equationsderived from the well-known Cauchy-Born rule. 相似文献
86.
The possible defect models of Y^3+:PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3+ ions are studied by using the general utility lattice program (GULP). The calculated results indicate that in the lightly doped Y^3+ :PWO crystal, the main compensating mechanism is [2Ypb^+ + VPb^2-], and in the heavily doped Y^3+ :PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^+, forming defect clusters of [2Ypb^+ +Oi^2-] in the crystal. The electronic structures of Y3+ :PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal. 相似文献
87.
LiNbO3∶Cr∶Cu晶体吸收特性及非挥发全息存储研究 总被引:1,自引:1,他引:0
研究了LiNbO3∶Cr∶Cu晶体的吸收特性,发现LiNbO3∶Cr∶Cu(含0.14 wt.% Cr2O3 和 0.011 wt.% CuO)晶体存在两个明显的吸收峰,中心波长分别位于480 nm和660 nm; 随着Cr的含量逐渐减小,Cu的含量逐渐增大,短波段不存在明显吸收峰,掺Cr的含量越大,中心波长在660 nm处的吸收越大;633 nm红光虽然位于中心波长为660 nm的吸收峰内,但它无助于光折变过程.分别采用390 nm紫外光和488 nm蓝光作为敏化光,514 nm绿光作为记录光的记录方案,实现了非挥发全息记录,掺入适量的Cr( 比如NCr=2.795×1025 m-3,NCr/ NCu=1)有助于全息记录性能的提高. 相似文献
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89.
本文研究了囚禁^85Rb原子的一维CO2光学晶格的光子带隙。由于大失谐CO2聚焦光束(λ=10.6μm)远离Rb原子的共振频率,原子与晶格光场的自恰作用可忽略,Rb原子被囚禁在周期为d=λ/2=5.3μm的周期性格点上,且单个格点上囚禁的原子数目可以达到10^3,整个晶格形成具有空间周期性调制的介电多层膜系。类似于光子晶体,其光学响应将在晶格频率与共振频率之间产生光子带隙。另一方面, 相似文献
90.
采用Cr4 ∶YAG晶体作为可饱和吸收体,实现连续激光二极管(LD)端面抽运的Nd∶YVO4激光器的高重复率被动调Q·在注入抽运功率为8.8W时,得到重复频率23.8kHz、平均功率1.21W的调Q脉冲序列;每个脉冲能量为51μJ、脉宽为25ns、峰值功率达到2.03kW·实验上研究了脉冲重复频率、平均输出功率、脉冲宽度、单脉冲能量与抽运功率、输出镜透过率的关系·实验结果表明,当抽运功率较大时,脉冲重复频率和输出平均功率随着抽运功率的增加而减小,对此进行了合理的理论解释· 相似文献