Imaging through aberrating imaging with media by computational ghost incoherent light

we demonstrate a series of experiments on imaging through both stationary aberrating media and moving aberrating media by computational ghost imaging （CGI）. An incoherent LED light source is used instead of the common pseudothermal light source （laser light passing through a rotating ground glass）. A digital micromirror device is used as a simple spatial light modulator to perform CGI. Moreover. a digital filtering method is introduced to improve imaging quality through moving aberrating media. This imaging modality may have potential applications in medicine and astronomy.     

High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice

Significantly improved electrostatic discharge(ESD)properties of InGaN/GaN-based UV light-emitting diode(LED)with inserting p-GaN/p-AlGaN superlattice(p-SLs)layers(instead of p-AlGaN single layer)between multiple quantum wells and Mg-doped GaN layer are reported.The pass yield of the LEDs increased from 73.53%to 93.81%under negative 2000 V ESD pulses.In addition,the light output power(LOP)and efficiency droop at high injection current were also improved.The mechanism of the enhanced ESD properties was then investigated.After excluding the effect of capacitance modulation,high-resolution X-ray diffraction(XRD)and atomic force microscope(AFM)measurements demonstrated that the dominant mechanism of the enhanced ESD properties is the material quality improved by p-SLs,which indicated less leakage paths,rather than the current spreading improved by p-SLs.     

2014年中国LED芯片产业发展前瞻

受下游照明市场旺盛的需求拉动,LED上游芯片行业2014年快速增长。目前我国LED上游企业的产能利用率总体在70%左右,而三安光电、士兰明芯、乾照光电等几大龙头企业产能利用率已达到90%以上。另据2014年第一季度业绩预告,大陆LED外延芯片上市企业除德豪润达预告为亏损外,     

Study of linearity for a high dynamic range calorimeter

A high dynamic range calorimeter has been designed for the DArk Matter Particles Explore(DAMPE) satellite. It consists of 308 BGO crystals, multi-dynode readout PMTs and front end electronics system. We have built on previous research to show that BGO fluorescence should not be saturated by high electron energy density under DAMPE's energy range. A BGO fluorescence simulator is set up to calibrate the energy range of the dynodes, while a cosmic-ray unit is used to calibrate 1 MIP with the ADC count in dynode 8. Linearity is achieved for the dynamic range from 0.5 MIPs to 1.26×105MIPs. The requirements of DAMPE can thus be satisfied.     

白光LED用球形Y2.96Al5O12:0.04Ce3+荧光粉的制备及光致发光

采用水热-热解法制备了可用于实现白光LED的Y2.96Al5O12∶0.04Ce3+荧光粉,通过X射线衍射(XRD)、扫描电镜(SEM)、X射线能谱(EDS)及荧光光谱(PL)等对Y2.96Al5O12∶0.04Ce3+荧光粉的物相、形貌及光致发光性能进行了表征。结果表明:水热-热解法制备出了物相纯净、分散性良好的球形Y2.96Al5O12∶0.04Ce3+粉体,该荧光粉可被460nm蓝光有效激发,发射光谱为峰值在550nm的一宽带,且水热-热解法得到的YAG∶Ce3+粉体发射强度优于传统高温固相法合成的YAG:Ce3+荧光粉;通过积分球耦合荧光光谱仪对荧光粉与蓝光芯片配合所得白光LED的量子效率进行了测试,结果表明:水热-热解法制备的Y2.96Al5O12∶0.04Ce3+荧光粉绝对量子效率为88.40%,外量子效率为78.64%,色坐标为(0.453 8,0.531 8),色温为358 4K,该方法制备的Y2.96Al5O12∶0.04Ce3+荧光粉稳定性及数据测定的重现性较好,是一种适用于暖白光LED的高性能黄色荧光粉。     

高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高

在图形化蓝宝石衬底生长低温缓冲层之前,通入少量三甲基镓（TMGa）和大量氨气进行短时间的高温预生长,通过改变TMGa流量制备了4个蓝光LED样品。MOCVD外延生长时使用激光干涉仪实时监测薄膜反射率,外延片使用高分辨率X射线衍射（002）面和（102）面摇摆曲线估算位错密度,并使用光致发光谱表征发光性能,制备成芯片后测试了正向电压和输出光功率。结果表明,高温预生长可促进薄膜的横向外延,使得三维岛状GaN晶粒在较小的薄膜厚度内实现岛间合并,有利于降低位错密度,提高外延薄膜质量,LED芯片的输出光功率的增强幅度达29.1%,而电学性能无恶化迹象;但高温预生长工艺中TMGa的流量应适当控制,过量的TMGa导致GaN晶粒过大,将延长岛间合并时间,降低晶体质量。     

替代100W白炽灯的新型12W LED球泡灯的散热性能研究

基于冷喷涂技术,提出了一种替代传统100 W白炽灯的新型12 W LED球泡灯,其散热器由纯铝板裁剪和弯折而成。在分析铜基板内部结构基础上,借助ANSYS软件模拟不同覆铜层厚度和不同形状散热器的球泡灯温度场,获得了具有最低芯片结温的LED球泡灯。研究结果表明,铜基板厚度一定时,芯片结温随覆铜层厚度的增加而降低。选择纯铝质散热器和增加覆铜层厚度可使LED球泡灯的结温降低为71.25 ℃,低于芯片安全温度85 ℃,满足散热和照明习惯要求。     

集成芯片LED场地照明灯新型叠片散热器热分析

针对大功率LED场地照明集成芯片散热问题,提出了一种新型散热器结构。该散热器利用高导热纯铝材料,采用叠片的方式成型。采用实验和有限元模拟相结合的研究方法,对包括直流电源的新型叠片式LED散热器的散热性能进行了研究。结果表明：LED电源达到稳态所需时间较长,最终能够稳定在一个较低的温度范围。叠片式纯铝散热器通过增加散热面积和提高散热器材料的导热系数能有效降低LED结温。所设计的散热器和选择的电源在自然对流条件下能够很好地满足250 W大功率LED散热要求。     

Ba5(PO4)3Cl：Eu2+荧光粉的制备和发光性能研究

以Eu₂O₃、NH₄H₂PO₄、BaCl₂·2H₂O、BaCO₃为原料,用高温固相法制备出Ba₅（PO₄）₃Cl：Eu²⁺荧光粉。用XRD衍射仪和荧光分光光度计分别测试样品的物相结构和荧光性能。结果表明：制备得到的Ba₅（PO₄）₃Cl：Eu²⁺为单相,在245~425 nm范围均有较大吸收,具有最强峰在435 nm的窄带发射。该荧光粉的发光强度受Eu²⁺浓度的影响较大,其发光随着Eu²⁺浓度的增加先增强后减弱。当Eu²⁺摩尔分数为3%时,发光强度达到最大。     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V 的GaN基绿光高压发光二极管（LED）,并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明：电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。