HIRFL高频腔体功率耦合匹配实验研究

 介绍了HIRFL主加速器SSC高频腔体功率馈入耦合匹配系统的研究，实验结果表明，通过改变耦合环角度可更好地实现高频腔体和高频发射机之间的匹配，提高了高频腔体电压和高频发射机的工作效率。     

ZnS:Mn,Cu粉末直流电致发光(DCEL)器件在交流(AC)电压下的频率特性

本文研究了DCEL器件在AC条件下,亮度、效率、有功电流、无功电流及损耗角正切与频率的关系.指出了发光区有效电场强度、发光区的宽度及电压分配系数等都是与频率有关的物理量.证明了有功电流和损耗角正切随频率的变化可分为两个区,在低于1kHz的低频区,有功电流和介质损耗分别以漏导电流和漏导损耗为主,可称为漏导电流区.在大于1kHz的高频区,有功电流中与各种松弛极化形式有关的吸收电流占主导且随频率增加较快.与其相关的,和各种极化有关的介质损耗急剧增加并超过漏导损耗而成为损耗的的主要成分,从而导致发光效率下降.这一区域可称为吸收电流区.     

A model for Light—Driven Proton Pump and Transfer in Bacteriorhodopsin

A theoretical model was assumed to describe the kinetic processes of light-driven proton pump and motion. The calculation shows that the photovoltage signals are greatly affected by experimental conditions including pulse width of excitation and impedance of measurement system. At the same excitation, only a negative photovoltage signal can be observed with small impedance and both the negative and positive signals can be observed with large impedance. With the same impedance, shorter response time of the pulsed photoelectric signals is responsible for shorter pulsed excitation. All these phenomena are in good agreement with the experimental results.     

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN／GaN Heterostructures

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 10^12cm^-2eV^-1, and the time constant is about 1μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passlvate the surface states effectively.     

Improvement of Main Magnetic Field Power Supply of SFC

The main magnetic field power supply is used for establishing main magnetic field of SFC, therefore excellent current stability and low ripple are required. Its DC output current range is 0～1300 A and max output voltage is 230 V. The power supply has been put into operation since Sep. in 2000, and was replaced in 033 room from 166 room of No.2 Building. We have improved the performance of power supply in this period.     

Eu2O3纳米晶谱带特征及光伏性质的研究

利用表面光电压谱技术对不同粒径的Eu2O3纳米晶进行光吸收特性的研究，并结合紫外－可见反射吸收光谱对其谱带进行解析，实验发现，随着样品粒径的变小，部分f→f跃迁的吸收带明显增加强并发生红移；在300－500nm区间有一个宽吸收边带，此带可归属于O2p→Eu4f的电荷转移跃迁。     

Electron Injection by E—Field Drift and its Application in Starting—up Tokamaks at Low Loop Voltage

We propose an innovative method of election injection by E-field drift into a plasma device and discuss its application in starting-up tokamak plasmas at low loop voltage.The experimental results obtained from HT-6M Tokamak are also presented.The breakdown loop voltage is obviously reduced and the discharge performance is improved by using the electron injection method.It could be applied to some other types of plasma device.     

无箔二极管电流电压关系研究

本文给出了无箔二极管物理特性的数值模拟研究结果。研究得到了二极管电流与二极管结构参数、二极管电压以及外加磁场强度等参数的变化关系特性，并且应用这些关系特性得到了在外加磁场强度足够大情况下二极管电流的近似表达为Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(r2/3-1)3/2，其中Ld为阴阳极间距；Rc为阴极发射端面的外半径；Rp为漂移管管壁半径；x=ln(Rp/Rc)，δr =Rp-Rc。这一表达式在大量二极管结构参数和二极管电压参数情况下与数值模拟结果在10％误差范围内相一致，能够比较准确的表达无箔二极管的电流电压关系。