磁控溅射技术制备ZnO透光薄膜

采用RF磁控溅射方法,在玻璃衬底上制备了择优取向的ZnO薄膜;通过台阶仪、X射线衍射技术、原子力显微镜和分光光度计分别测量了不同溅射功率条件下淀积的ZnO薄膜厚度(淀积速率)、结晶质量、表面形貌与粗糙度、透光光谱,报道了该薄膜结晶质量、薄膜粗糙度与其在可见光区透光率的关系.     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

PV型HgCdTe光电探测器中的混沌及其诊断

 对激光辐照半导体光电探测器的实验研究，发现当一束不太强的稳定连续波激光照射在PV型HgCdTe光电探测器上时，可以引起探测器出现混沌行为。利用光电探测器的光电压信号随时间变化的实验数据，通过求功率谱、计算Lyapunov指数对混沌进行了诊断。     

激光溅射Ni等离子体与气相CH3OH团簇的反应

用激光溅射 分子束技术研究了气相中Ni的等离子体与甲醇分子团簇的反应 .观察到Ni+ (CH3 OH) n、NiO+ (CH3 OH) n、H+ (CH3 OH) n、H3 O+ (CH3 OH) n 四个种类的团簇正离子和CH3 O-(CH3 OH) n(n≤ 2 5 )一种团簇负离子 .详细考察了激光烧蚀等离子体作用于脉冲分子束的不同位置时 ,对团簇产物种类和团簇尺寸大小的影响 .发现NiO+ (CH3 OH) n 是由Ni+ (CH3 OH) n 团簇内的脱甲烷反应生成的 ,而H+ (CH3 OH) n、H3 O+ (CH3 OH) n主要是激光等离子体中的电子与甲醇团簇碰撞电离产生的     

延长速调管使用寿命的方法

描述了一种延长EPR波谱仪中速调管使用寿命的方法.根据这种方法,只要正确地调谐微波桥的工作状态和适当地调整功率电平器的功率校正电平.即使对于已经严重老化的速调管仍然可以继续使用一段时间,维持仪器的正常运行.     

回旋管输出窗热性质的研究

一、引 言 输出窗是回旋管的能量输出端口,它的特性直接影响到回旋管的性能和寿命。输出窗的设计包括电特性和热特性的研究。当输出功率增加时,热特性的研究变得非常重要以便寻求合理有效的冷却措施。 输出窗由波导和介质片(块)两部分组成。回旋管的输出波导是圆波导,介质一般做成     

Upconversion luminescence of Tm^3＋/Yb^3＋ codoped oxyfluoride glasses

Novel oxyfluoride glasses are developed with the composition of 30SiO2-15Al2O3-28PbF2-22CdF2-0.1TmF3 - xYbF3 - （4.9 - x） AlF3（x=0, 0.5, 1.0, 1.5, 2.0） in tool fraction, Furthermore, the upconversion luminescence characteristics under a 970nm excitation are investigated. Intense blue, red and near infrared luminescences peaked at 453nm, 476nm, 647nm and 789nm, which correspond to the transitions of Tm^3＋： ^1D2 →^3F4, ^1G4 →^3H6, ^1G4 →^3F4, and ^3H4 →^3H6, respectively, are observed. Due to the sensitization of Yb^3＋ ions, all the upconversion luminescence intensities are enhanced considerably with Yb^3＋ concentration increasing. The upconversion mechanisms are discussed based on the energy matching rule and quadratic dependence on excitation power. The results indicate that the dominant mechanism is the excited state absorption for those upconversion emissions.     

一种基于功率谱对数变换的联合变换相关器

联合功率谱的高频成份对相关峰识别具有重要作用,实验中记录的联合功率谱随着频率的增加其强度迅速降低。为增强联合功率谱的高频成分,改善其调制程度,可对功率谱进行对数变换,从而有效保留更多的高频成份,压低零级衍射光斑,提高联合变换相关器的识别能力。