光子晶体光纤温度压力传感器

提出了一种在高温环境下同时测量温度和气压的光子晶体光纤温度压力传感器.在普通单模光纤和光子晶体光纤之间熔接一段空心光纤构成干涉结构.空心光纤段构成非本征法布里-珀罗干涉仪,利用光子晶体光纤的微孔与外界相通,通过气体折射率变化来测量环境中的气压变化;光子晶体光纤段构成本征法布里-珀罗干涉仪,利用热膨胀效应和热光效应来测量环境中的温度.传感器的解调通过自制的白光干涉解调仪实现,实验通过测量腔长得到被测环境的温度和气压.在不同温度和气压环境下,对腔长分别为306μm和1535μm的温度压力光纤传感器进行连续测量.实验结果表明,传感器能够在28~800℃的温度下和0~10 MPa的气压下稳定工作,测量范围内温度灵敏度可达17.4 nm/℃,压力灵敏度随温度增加而降低,在28℃时可达1460.5 nm/MPa.     

压力诱导发光未来可期

科技创新的根源是基于基础科学研究的提升,而"从0到1"的突破是需要长期的积累和灵感的。本文讲述了发现压力诱导发光这一新现象的思想和材料设计。     

氩气感应耦合等离子体速度与温度数值模拟

为了获得用于研究再入飞行器热防护系统的感应耦合等离子体风洞流场数据,基于流场、电磁场和化学场的多场耦合建立了非平衡态感应耦合等离子体数值模型。利用该模型对不同入口质量流率和不同工作压力下的感应耦合等离子体进行了数值模拟,得到了相应工作参数下感应耦合等离子体温度与速度的分布特性。计算结果表明:等离子体中心线上的速度随着入口质量流率的增大而增大,而随着工作压力的增大而减小;同时,等离子体中心线上的温度随着入口质量流率的增大而减小,而随着压力的增大先减小后增大。这些结果可为感应耦合等离子体风洞优化设计及其工业应用提供理论指导。     

钴掺杂MoSe2共生长中氢气的作用分析及磁电特性研究

采用原位共生长化学气相沉积法,以Co3O4、MoO3、Se粉末为前驱物,710℃下在SiO2衬底上生长掺钴MoSe2纳米薄片,分析讨论氢气含量对其生长及调节机理的影响.表面形貌分析表明,氢气的引入促进了成核所需的氧硒金属化合物以及横向生长中需要的CoMoSe化合物分子的生成;AFM(Atomic Force Microscope)结果表明氢气有利于生长单层二维超薄掺钴MoSe2.随着Co3O4前驱物用量的增加,样品的拉曼和PL(Photoluminescence)谱图分别表现出红移和蓝移现象,带隙实现从1.52—1.57 eV的调制.XPS(X-ray photoelectron spectroscopy)结果分析得到Co的元素组分比为4.4%.通过SQUID-VSM(Superconducting QUantum Interference Device)和器件电学测试分析了样品的磁电特性,结果表明Co掺入后MoSe2由抗磁性变为软磁性;背栅FETs器件的阈值电压比纯MoSe2向正向偏移5 V且关态电流更低;为超薄二维材料磁电特性研究及应用拓展提供了基础探索.     

Al2O3衬底无催化剂生长GaN纳米线及其光学性能

采用一种绿色的等离子增强化学气相沉积法,以Al2O3为衬底, Ga金属为镓源, N2为氮源,在不采用催化剂的情况下,成功制备获得了结晶质量良好的GaN纳米线.研究表明,生长温度可显著调控GaN纳米线的形貌,当反应温度为950℃时,生长出的GaN微米片为六边形;当反应温度为1000℃时,生长出了长度为10-20μm的超长GaN纳米线.随着反应时间增加, GaN纳米线的长度增加. GaN纳米线内部存在着压应力,应力大小为0.84 GPa.同时,也进一步讨论了GaN纳米线无催化剂生长机制. GaN纳米线光致发光结果显示, GaN纳米线缺陷较少,结晶质量良好,在360 nm处有一个较为尖锐的本征发光峰,可应用于紫外激光器等光电子器件.本研究结果将为新型光电器件低成本绿色制备提供一个可行的技术方案.     

Controlled morphology of Ag nanocolumns by oblique angle deposition： kinetic Monte Carlo simulation

Fabrication of Ag or Au nanocolumns by oblique angle deposition （OAD） is now prevalent for their surface enhanced Raman scattering （SERS） property and their biosensor application. However, the size, shape, and the density of nanocolumns are not directed in a desired way. To sufficiently realize the growth process controlled by multiple physical factors like deposition angle （a）, substrate temperature （T）, and deposition rate （F）, we develop a three-dimensional （3D） kinetic Monte Carlo （KMC） model for simulating processes of Ag nanocolumnar growth by oblique angle deposition. The dependences of nanocolumnar morphologies on these factors are analyzed. The mimical results reach a reasonable agreement with the experimental morphologies generated bv OAD.     

Online re-optimization of optical filters on a production sputter tool

This contribution presents a magnetron sputter deposition tool with broadband optical monitor and online re-optimization capability for high volume production. The layer termination relies on a comparison of the actually measured reflection spectrum with a pre-calculated target spectrum. Spectra recorded after each deposited layer are analyzed by the re-optimization module and in case of significant deviations layer thicknesses and target spectra for the remaining layers are recalculated. This technique significantly improves the performance and reproducibility in case of highly denlanding coating designs and is able to correct abnormal production errors in individual layers, which will lead to coating failure without re- optimization.     

Pressure effect on the electron mobility in AlAs/GaAs quantum wells

By taking the influence of optical phonon modes into account, this paper adopts the dielectric continuum phonon model and force balance equation to investigate the electronic mobility parallel to the interfaces for AlAs/GaAs semiconductor quantum wells (QWs) under hydrostatic pressure. The scattering from confined phonon modes, interface phonon modes and half-space phonon modes are analysed and the dominant scattering mechanisms in wide and narrow QWs are presented. The temperature dependence of the electronic mobility is also studied in the temperature range of optical phonon scattering being available. It is shown that the electronic mobility reduces obviously as pressure increases from 0 to 4GPa, the confined longitudinal optical (LO) phonon modes play an important role in wide QWs, whereas the interface optical phonon modes are dominant in narrow QWs, the half-space LO phonon modes hardly influence the electronic mobility expect for very narrow QWs.     

同位网格上不可压流动的反欠松弛压力修正算法

本文提出了同位网格上的不可压流动压力修正算法,其中压力修正值由压力方程所求得。设计了分离式的动量插值方法,有效地避免了松弛因子对计算结果的影响和不合理压力场的出现。提出了构造压力方程的反欠松弛方法,该方法建立了稳定和加速计算收敛的一般途径。对经典算例的计算得到了满意的结果。