Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, x-ray diffraction （XRD） and Ftaman spectra, respectively. The nanocrystalline grains are averagely with 80hm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses （100） dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.     

Mo/Si aperiodic multilayer broadband reflective mirror for 12.5-28.5-nm wavelength range

Aperiodic molybdenum/silicon (Mo/Si) multilayer designed as a broadband reflective mirror with mean reflectivity of 10% over a wide wavelength range of 12.5-28.5 nm at incidence angle of 5° is developed using a numerical optimized method. The multilayer is prepared using direct current magnetron sputtering technology. The reflectivity is measured using synchrotron radiation. The measured mean reflectivity is 7.0% in the design wavelength range of 12.5-28.5 nm. This multilayer broadband reflective mirror can be used in extreme ultraviolet measurements and will greatly simplify the experimental arrangements.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

雷诺应力对平均和脉动压力影响的数值模拟

采用增加雷诺应力边界条件方法考察了雷诺应力对流场的影响。当雷诺应力边界条件存在时,流场内平均和脉动压力的变化体现了雷诺应力的影响。本文首先在没有雷诺应力边界条件和有雷诺应力边界条件的情况下得到TTU低矮建筑标准模型表面的平均压力系数,结果表明:考虑雷诺应力可使建筑物表面的平均压力系数的绝对值增大。本文还利用Selvam提出的脉动压力系数数学模型,计算了TTU模型表面的脉动压力系数,并对计算结果进行了分析。     

沉积温度对硬质合金表面沉积的SiC薄膜的影响

采用强电流直流伸展电弧等离子体CVD技术,以Ar、H2和四甲基硅烷(TMS)为先驱气体,在YG6硬质合金衬底表面制备了SiC薄膜。实验结果表明:随着沉积温度的升高,薄膜的致密性和平整度提高;但当沉积温度过高时,SiC薄膜的表面开始具有含非晶碳球和呈花瓣状的疏松结构。在合适的沉积温度下,SiC薄膜的致密性和平整度较好,且其具有较好的附着力和一定的强度,而这样的SiC薄膜可以阻止在金刚石涂层沉积过程中硬质合金中含有的Co对金刚石相沉积过程的有害作用。     

化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究

硫化铟是一种稳定、低毒性的半导体材料. 本文采用低成本的化学浴沉积方法制备了硫化铟敏化太阳电池, X射线衍射(XRD)、光电子能谱(XPS)和扫描电镜(SEM)结果表明形成了硫化铟敏化的二氧化钛薄膜. 化学浴沉积温度对所得硫化铟敏化薄膜的形貌有显著的影响, 进而影响电池性能. 温度太低时, 化学浴沉积反应速率太低, 只发生少量沉积; 温度太高时, 化学浴沉积反应速率较快, 硫化铟来不及沉积到二氧化钛多孔薄膜内部. 当温度在40℃时, 硫化铟沉积均匀性最好, 薄膜的光吸收性能最佳, 电池的短路电流最大, 另外, 填充因子达到最佳, 为65%, 电池总体光电转换效率为0.32%.     

铈对三角帆蚌钙代谢影响的研究

研究了不同浓度稀土Ce3+(0,0.5,1.0,2.5 mg·L-1)处理30,60 d时对2龄植片三角帆蚌钙代谢和珍珠质沉积的影响。结果表明:Ce3+对三角帆蚌珍珠质沉积量、外套膜和鳃组织中组织钙含量、钙调蛋白基因mRNA的表达量、腺苷三磷酸酶(ATPase)活性、碱性磷酸酶(ALP)活性的影响总体上均表现出明显的"低促高抑"的剂量效应和高浓度下"先促后抑"的时间效应。推测稀土Ce3+对钙调蛋白基因mRNA表达水平及关键酶活性的调节可能是其影响三角帆蚌钙代谢和珍珠质沉积的途径之一。     

纳米材料修饰电极上吸附态葡萄糖氧化酶的酶活性和电活性的比较

采用石英晶体微天平(QCM)技术, 监测了裸金(Au)电极、电沉积纳米金的金电极(Au_ed/Au)、多壁碳纳米管(MWCNTs)修饰的金电极(MWCNTs/Au)以及MWCNTs 修饰后再电沉积纳米金的金电极(Au_ed/MWCNTs/Au)上葡萄糖氧化酶(GOx)的吸附过程, 测算了吸附固定的GOx质量. 通过阳极恒电位检测吸附酶与葡萄糖发生酶反应所产生的过氧化氢, 考察了这些酶电极的安培响应, 并测算了各吸附态GOx的质量比生物活性(MSBAi).也通过循环伏安法研究酶的直接电化学, 测算了各吸附态GOx的电活性百分数(EAP_i). 实验结果表明, 酶吸附量和酶电极的安培响应满足MWCNTs/Au > Au_ed/MWCNTs/Au > Au_ed/Au > Au 的顺序; MSBA_i满足Au > Au_ed/MWCNTs/Au > Au_ed/Au > MWCNTs/Au的顺序; 而EAP_i则满足MWCNTs/Au > Au_ed/MWCNTs/Au > Au_ed /Au > Au的顺序. 根据酶和纳米材料的亲疏水作用以及酶的吸附量对实验结果进行了合理解释, 也定量验证了电极上吸附酶分子的总生物活性与酶电极的安培响应呈正相关关系, 所得数据和结论有助于纳米材料固定酶及其安培酶电极的研究.     

ZnO/CdS复合材料的合成与可见光催化性能

采用喷雾辅助气相沉积法在水热法合成的ZnO纳米线上沉积CdS纳米颗粒。采用X射线衍射仪（XRD）、激光拉曼仪（Raman）、扫描电镜（SEM）、透射电镜（TEM）、X射线光电子能谱分析谱（XPS）和紫外可见漫反射光谱等测试手段对复合光催化剂进行表征。结果表明,3~10 nm的CdS纳米粒子修饰在直径约为100 nm ZnO纳米线的表面。XPS和Raman表明复合材料中ZnO和CdS之间存在化学相互作用。可见光催化降解罗丹明B实验结果表明ZnO/CdS复合材料的催化性能优于单相CdS或ZnO,沉积时间为30 s合成的ZnO/CdS速率常数分别是CdS和ZnO的2.91和4.03倍,且具有较高的稳定性。ZnO/CdS复合材料光催化性能增强的可能原因为光吸收范围的拓展和光生载流子分离效率的提高。