沉积铁钝化膜的傅立叶变换表面增强拉曼光谱

利用恒电流沉积技术、傅立叶变换表面增强拉曼散射技术现场研究了0 1mol/LNaOH溶液中铁金属电极在不同电位下的表面氧化物的组成。结果表明,在电极预钝化区,表面首先生成的Fe(OH)2可由拉曼谱图中出现的550cm-1表征,证实了以往的研究结果。进入钝化区,表面二价氧化物逐步转化为高价氧化物Fe3O4及α 、δ 和γ FeOOH。在电位回扫的过程中,各氧化产物的还原以及铁表面SERS活性的逐渐消失导致谱峰强度降低。     

甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染     

Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures

Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 255℃ to 400O℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp^3 carbon in the films is about 40% when the substrate temperature is below 300℃ C. With increasing substratetemperature from 25℃ to 400℃, the concentration of sp^3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp^2 carbon when the substrate temperature is above 300℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.     

热声驱动系统中的压力测量

介绍了自制的用于热声驱动脉管制冷装置的计算机压力波数据采集系统。该系统由硅压电压力传感器、数据采集卡、PC机和基于 Labview软件的图形化用户界面 GUI( Graphical User In-terface)组成。试验证明 ,它具有结构简单、高效精确、操作简便等特点 ,在捕捉被测系统内的动态压力变化方面具有优势 ,不但能很好地满足热声驱动器的压力测量要求 ,而且亦可移植到任何类似的测量气体压力的场合     

加压下的石墨炉原子吸收光谱分析

本文评述了压力对电热原子化的影响。惰性气体压力对石墨炉原子吸收光谱分析特性的影响归结为压力对试样蒸发速率的影响和原子蒸气的吸收系数随气体压力增加而降低（罗伦兹效应）。加压下原子化有下列优点：（1）非线性校准曲线的线性化；（3）增加校准曲线的线性动态范围；（3）减小光源放电条件变化引起的影响，提高了精密度和降低检出极限；（4）减小了气相干扰。但是，峰高与峰面积灵敏度随压力增加而降低。采用连续光源和加压原子化能显著提高灵敏度和降低检出极限。     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

小长径比垂直管气液两相流动特性分析

实验观察了小长径比垂直上流管内流型及特点,并对管入口处的压力波动特性和系统的压差波动特性进行了试验研究.结果表明:小长径比(L/D)垂直管内流型表现为泡状流、塞状流、乳沫状流、环状流和液束环状流;分别增加管线中的气量、液量,或者同时增加气液流量,均会造成垂直管入口处压力波动的均值和最大压力的增加;压力信号的概率密度(PDF)大部分呈双峰分布,也存在单峰和多峰分布;差压信号的概率密度符合正态分布,其功率谱密度同压力信号相比具有频率波动范围宽、幅值小的特点.     

“压力管道安全检测与评价技术研究”项目简介

该项目研究内容以压力管道安全保障为中心，在管道危险源辨识与安全状况等级评价、无损检测和结构完整性评估技术三个方面取得了突破性进展。突破了安全状况等级定量评价、薄壁和大曲率管道焊缝缺陷检测、复杂管系统结构完整性评估等技术难题，首次提出在用压力管道安全保障五大环节的全过程技术方法，系统建立了压力管道安全检测与评价方法体系，在压力管道事故预防技术领域实现了跨跃式发展。     

A Novel Analytical Approach for Multi-Layer Diaphragm-Based Optical Microelectromechanical-System Pressure Sensors

An optical microelectromechanical-system （MEMS） pressure sensor based on multi-layer circular diaphragm is described and analysed by using the proposed novel analytical approach and the traditional transfer matrix method. The analytical expressions of the deflection of multi-layer diaphragm and absolute optical reflectance are derived respectively. The influence of residual stress on the deflection of diaphragm is also analysed. Simulation results given by the finite element method are consistent with the ones which are analysed by using the analytical approach. The analytical approach will be helpful to design and fabricate the optical MEMS pressure sensors with multi-layer diaphragm based on Fabry-Perot interferometry.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.