Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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基于频域方法的三维物体分层重现

基于频域方法实现了数字记录和再现三维物体离轴全息图.通过频谱对应关系求得各个面的频谱分布,使用数字滤波方法,成功地消除了零级衍射和共轭像;通过改变再现距离,分别获取了三维物体各个截面的再现像.     

遥感傅里叶变换红外光谱的大气层析技术

遥感傅里叶变换红外光谱层析技术是一项新的气体分析技术，它可用于构造气体浓度峰图形，定量分析工业污染气体总释放量等方面，随着算法的不断优化，在重构气体在空间的分布方面，遥感傅里叶变换红外光谱层析技术正在不断成长。