首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   16697篇
  免费   5651篇
  国内免费   8748篇
化学   11949篇
晶体学   811篇
力学   3643篇
综合类   608篇
数学   2464篇
物理学   11621篇
  2024年   202篇
  2023年   688篇
  2022年   839篇
  2021年   823篇
  2020年   668篇
  2019年   632篇
  2018年   533篇
  2017年   684篇
  2016年   728篇
  2015年   788篇
  2014年   1609篇
  2013年   1324篇
  2012年   1272篇
  2011年   1380篇
  2010年   1318篇
  2009年   1377篇
  2008年   1489篇
  2007年   1165篇
  2006年   1225篇
  2005年   1396篇
  2004年   1170篇
  2003年   1399篇
  2002年   1104篇
  2001年   1133篇
  2000年   870篇
  1999年   588篇
  1998年   563篇
  1997年   489篇
  1996年   502篇
  1995年   522篇
  1994年   507篇
  1993年   374篇
  1992年   380篇
  1991年   362篇
  1990年   399篇
  1989年   323篇
  1988年   81篇
  1987年   66篇
  1986年   43篇
  1985年   36篇
  1984年   13篇
  1983年   12篇
  1982年   15篇
  1981年   1篇
  1979年   3篇
  1959年   1篇
排序方式: 共有10000条查询结果,搜索用时 9 毫秒
101.
当液体受限在纳米尺度下时,会呈现出跟宏观尺度下完全不同的输运性质。这些新的性质可以被应用于很多领域,譬如对生物体中体液输运的研究,液体抽运,药物的混合和分离,以及离子和胶体颗粒的选择等领域。为了充分利用这些新性质,需要对纳米液体中最基本的双电荷层结构有深刻认识。文章回顾了传统的泊松—玻尔兹曼方程对双电荷层结构中液体离子分布的计算,指出了其中的不足,并提出一种基于液体电荷保持中性的固液表面势模型。  相似文献   
102.
A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO (AZO) thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.  相似文献   
103.
赵显伟  郜小勇  陈先梅  陈超  赵孟珂 《中国物理 B》2013,22(2):24202-024202
The nitrogen doping of ZnO film deposited by the magnetron sputtering method is subsequently realized by the hydrothermal synthesis method.The nitrogen-doped ZnO film is preferably(002) oriented.With the increase of hexamethylenetetramine(HMT) solution concentration,the average grain size of the film along the 002 direction almost immediately decreases and then monotonously increases,conversely,the lattice strain first increases and then decreases.The structural evolution of the film surface from compact and even to sparse and rough is attributed to the enhanced nitrogen doping content in the hydrothermal process.The transmission and photoluminescence properties of the film are closely related to grain size,lattice strain,and nitrogen-related defect arising from the enhanced nitrogen doping content with HMT concentration increasing.  相似文献   
104.
董晓轩  申溯  陈林森 《光子学报》2014,43(7):722001
为了降低光学表面的菲涅耳反射,提出了一种制备仿生减反结构的方法.利用银镜反应并结合退火处理在硬性材质基底表面制备银纳米粒子,经反应离子刻蚀工艺,在基底表面形成一层纳米蛾眼减反结构.分析了周期分布和随机分布纳米蛾眼的光学特性,实验研究了退火参量和刻蚀参量对银纳米颗粒直径、密度以及高度的影响,并在硅和石英基底上分别制备了随机减反结构.测试结果表明:硅基平均反射率小于4.5%,双面石英基透过率达98.1%.理论和实验均表明:随机分布的纳米仿生蛾眼结构具有宽光谱、广视角和高减反特性,所提出的制备方法具有简便易行、低成本、大幅面等优点,在光电器件中具有良好的潜在应用前景.  相似文献   
105.
106.
Nanocrystalline Cu film with a mirror surface finishing is prepared by the electric brush-plating technique. The as- prepared Cu film exhibits a superhydrophilic behavior with an apparent water contact angle smaller than 10°. A subsequent increase in the water contact angle and a final wetting transition from inherent hydrophilicity with water contact angle smaller than 90° to apparent hydrophobicity with water contact angle larger than 90° are observed when the Cu film is subjected to natural aging. Analysis based on the measurement of hardness with nanoindentation and the theory of the bond-order-length-strength correlation reveals that this wetting variation on the Cu film is attributed to the relaxation of residual stress generated during brush-plating deposition and a surface hydrophobization role associated with the broken bond polarization induced by surface nanostructure.  相似文献   
107.
Compounds with the formula Cr2-xZr0.5xMg0.5xMo3O12(x = 0.0, 0.3, 0.5, 0.9, 1.3, 1.5, 1.7, 1.9) are synthesized, and the effects of Zr4+ and Mg2+ co-incorporation on the phase transition, thermal expansion, and Raman mode are investigated. It is found that Cr2-xZr0.5xMg0.5xMo3O12 crystallize into monoclinic structures for x 〈 1.3 and orthorhombic structures for x _〉 1.5 at room temperature. The phase transition temperature from a monoclinic to an orthorhombic structure of Cr2Mo3O12 can be reduced by the partial substitution of (ZrMg)6+ for Cr3+. The overall linear thermal expansion coefficient decreases with the increase of the (ZrMg)6+ content in an orthorhombic structure sample. The co-incorporation of Zr4+ and Mg2+ in the lattice results in the occurrence of new Raman modes and the hardening of the symmetric vibrational modes, which are attributed to the MoO4 tetrahedra sharing comers with ZrO6/MgO6 octahedra and to the strengthening of Mo-O bonds due to less electronegativities of Zr4+ and Mg2+ than Cr3+, respectively.  相似文献   
108.
毕亚峰 《应用声学》2014,33(1):15-15
正声学成像是一种用来检测物质结构和成分的重要方法,其分辨率受限于衍射极限(diffraction limit)。为了获取更高的分辨率,往往需要测量高空间频率的声倏逝波(acoustic evanescent wave)。倏逝波带有物体的细节特征信息,离开天然材料物体后的衰减特性满足指数关系。近年来,科学家利用结构声学超常材料(structured acoustic metamaterials,AMM)克服衍射极限,通过增强倏逝波  相似文献   
109.
110.
The transport properties and fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I-V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I-V curves combined with C-f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I-V cycle state, this structure shows more than one order increase of resistance after 100 cycles of "I-V curve training". The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.lFeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.lFeO3 interface.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号