树型结构半导体光放大器光交换矩阵的可靠性(英文)

针对光交换系统的可靠性研究已卓有成效,但作为光交换系统的核心元件——光交换矩阵的可靠性却始终没有得到足够的重视.本文利用可靠性框图对基于半导体光放大器的树型结构光交换矩阵进行了可用性分析.分析结果表明该型光交换矩阵在可靠性上存在的不足,需要设计保护结构.通过对已有的光交换系统可靠性研究工作的分析总结,提出了两种针对树型结构光交换矩阵的保护结构,并利用可靠性框图和概率统计方法对其进行比较分析了两种结构的特点.研究表明,交换矩阵对于SOA的可靠性最为敏感.交换矩阵保护结构的设计过程,实际上是系统可靠性、成本、体积及性能的折衷.因其对成本和可靠性的影响,能否提供有效的检测和维护也应在保护结构的设计过程中予以考虑.     

超声波海水淡化装置的设计研究

针对我军海防士兵淡水补给困难的问题,以超声雾化为基础,结合半导体冷凝技术,提出了一种超声波海水淡化装置的设计思路.并利用Multisim和Matlab仿真软件研究了超声波发射器振荡频率与雾化水雾中盐度之间的关系,为相关设备的后续研制提供了可靠的理论依据.     

Waveguide modulated non-local optical interaction of semiconductor microdisks

The non-local optical interaction of two semiconductor microdisks with a waveguide bridged at radial direction is proposed and studied by three dimensional finite-difference time-domain （FDTD） electromagnetic simulations. The strong and weak optical interactions between two microdisks are observed and ascribed to the internal coupled modes with different coupling ratios. The vertical radiation losses and the related mode quality factors are modulated by waveguide length and present oscillation characteristics for the resonant modes. In addition, the optical leakage of coupling system is affected by the etching depth of disks due to tile emission of minor components of electric field.     

Generation and noise analysis of a wide-band optical -frequency comb based on recirculating frequency shifter

By optimizing the gain configuration and length of the loop, a 90-tone optical frequency comb （OFC） is successfully generated based on recirculating frequency shifter structure. The peak-to-peak power fluctuation of the 90-tone OFC is 4.26 dB and the tone-to-noise ratio is higher than 19.17 dB. To further analyze the noise accumulation feature of the tones when travelling around the loop, linewidth of the tones is measured by delayed self-heterodyne interferometer structure. The result shows the linewidth of the tones deteriorates little during the recirculating process, indicating that the generated OFC is an ideal multi-wavelength source for high-speed communication svstems.     

半导体泵浦全固态激光测距仪的研制

为适应工程小型化平台需要,研制了一种半导体泵浦全固态激光测距仪。采取半导体泵浦方式,激光谐振腔设计为平平腔,采用金属热沉冷却与半导体制冷相结合,研制出的激光测距仪工作频率可达20Hz,测程大于20km,测距精度可达±1.5m。经过试验验证,性能稳定,指标可靠。     

基于V型腔光反馈法的半导体激光器线宽压窄和频率锁定初步研究

线宽压窄和频率锁定是提高激光器（特别是半导体激光器）性能的重要手段。在理论分析光反馈时的半导体激光器线宽压窄和频率锁定机理的基础上,建立了一套基于高品质V型光学谐振腔的半导体激光器线宽压窄实验系统,并利用该系统开展了初步实验研究。通过对比无有光反馈情况下的V型腔的透射光扫描线形,初步验证了V型腔用于半导体激光器线宽压窄和频率锁定的可行性,为后续研究奠定了基础。     

A study of transition from n-to p-type based on hexagonal WO3 nanorods sensor

Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.     

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.     

Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO

The energy band properties, density of states, and band alignment of the BexZn1-xO1-ySy alloy （Be- and S-doped wurtzite ZnO） are investigated by the first-principles method. BexZn1-xO1-ySy alloy is a direct band gap semiconductor, the valence band maximum （VBM） and the conduction band minimum （CBM） of BexZn1-xO1-ySy are dominated by S 3p and Zn 4s states, respectively. The band gap and lattice constant of BexZn1-xO1-ySy alloy can be modulated by changing the doped content values x and y. With the increase in Be content value x in the BexZnl-xOl-ySy alloy, the band gap increases and the lattice constant reduces, but the situation is just the opposite when increasing the S content value y in the BexZn1-xO1-ySy alloy. Because the lattice constant of Be0.375Zn0.625O0.75S0.25 alloy is well matched with that of ZnO and its energy gap is large compared with that of ZnO, so the Be0.375Zn0.625O0.75S0.25 alloy is suitable for serving as the blocking material for a high-quality ZnO-based device.     

Broadband energy harvesting via magnetic coupling between two movable magnets

Harvesting energy from ambient mechanical vibrations by the piezoelectric effect has been proposed for powering microelectromechanical systems and replacing batteries that have a finite life span. A conventional piezoelectric energy harvester （PEH） is usually designed as a linear resonator, and suffers from a narrow operating bandwidth. To achieve broadband energy harvesting, in this paper we introduce a concept and describe the realization of a novel nonlinear PEH. The proposed PEH consists of a primary piezoelectric cantilever beam coupled to an auxiliary piezoelectric cantilever beam through two movable magnets. For predicting the nonlinear response from the proposed PEH, lumped parameter models are established for the two beams. Both simulation and experiment reveal that for the primary beam, the introduction of magnetic coupling can expand the operating bandwidth as well as improve the output voltage. For the auxiliary beam, the magnitude of the output voltage is slightly reduced, but additional output is observed at off-resonance frequencies. Therefore, broadband energy harvesting can be obtained from both the primary beam and the auxiliary beam.