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71.
基于半导体材料的新型光纤温度传感器   总被引:1,自引:0,他引:1  
李亦军 《应用光学》2003,24(1):17-18,48
提出利用全反射定律以半导体材料作为敏感器件的光纤温度传感器,着重阐述半导体材料的温度敏感特性及传感原理,介绍传感器构造,并给出初步实验方案。  相似文献   
72.
An aligned zinc oxide nanofibre array has been fabricated by heating the mixture of ZnO, Ga2Oa, and graphite powders in atmosphere. The ZnO nanofibre showed a uniform size of about 150nm in diameter and 50μm in length. The nanofibres grew predominantly along one direction. Both x-ray diffraction (XRD) and Raman shift spectra show that the product is composed of ZnO with the typical hexagonal structure. The good crystallinity of these ZnO nanofibres has been verified by photoluminescence spectra with strong UV emission at 287nm and weak green band emission observed at room temperature. The component of the product was analysed by XRD,Raman shift spectrum, x-ray energy dispersion (EDX) and x-ray photoelectronic energy spectroscopy (XPS). The growth process and the characteristics can be interpreted by vapour-liquid-solid mechanism.  相似文献   
73.
GaAs/GaInNAsSb超晶格性能的影响   总被引:1,自引:1,他引:0       下载免费PDF全文
用Keafing的价力场(valence force field)模型和蒙特卡罗方法计算了GaAs/GaInNAsSb超晶格中键的分布、原子的精确位置以及应变.用折叠谱(foldedspectrummethod)合Williamson经验赝势法计算了GaAs/GaInNAsSb超晶格应变条件下的电子结构.讨论了N和Sb原子以及超晶格单分子层数对电子结构的影响.发现导带底电子态在N原子周围的局域化减小了光跃迁矩阵元,从而影响了该超晶格的发光性能.计算并讨论了超晶格的电子和空穴的有效质量.  相似文献   
74.
We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.  相似文献   
75.
We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.  相似文献   
76.
由于腔模与激子对压力的依赖关系不同,所以可以选择不同的压力使激子和光场处于不同的耦合状态,从而实现对耦合的调谐。利用这种办法,我们观测到了代表激子与光场强耦合作用的Rabi分裂。由于在我们现有样品结构中压力对激子本征行为的影响很小,与以前报道的温度、电场等调谐方式相比,这种调谐方法不仅可以有效地调谐半导体微腔内激子与腔模的耦合程度,而且能够保持激子的本征性质在整个调谐过程中基本不变。这有助于研究在强耦合过程中激子极化激元的本征性质。将实验结果与压力下激子与腔模耦合理论进行拟合,得出了正确的Rabi分裂值。  相似文献   
77.
We study the oscillator strengths of the optical transitions of the vertically stacked self-assembled InAs quantum discs.The oscillator strengths change evidently when the two quantum discs are far apart from each other.A vertically applied electric field affects the oscillator strengths severely.while the oscillator strengths change slowly as the radius of one disc increases.We also studied the excitonic energy of the system.including the Coulomb interaction.The excitonic energy increases with the increasing radius of one disc.but decreases as a vertically applied electric field increases.  相似文献   
78.
本文论及半导体与超晶格的数学模型方法的一些新近发展动态。介绍了半导体与超晶格的一些背景材料并给出了半导体宏观模型间的层次框架。超晶格中载流子传输的SHE扩散模型也被观察。  相似文献   
79.
The influence of localized resonance on the properties of band-gaps of the two-dimensional periodic composite are analysed numerically and experimentally by comparing the two-component phononic crystal with the three-component one. The three-component composite which exhibits localized resonance in the elastically soft coating ring is composed of a square array of coated cylinders embedded in an epoxy resin. The coated cylinders consist of a steel inner core and a rubber coating, which has much smaller wave velocity and mass density than the matrixand tile inner material. Tile measured transmission power of tile three-component composite drops to the noise level in a broad ultrasonic frequency interval in contrast to the binary composite, which is in good agreement with the calculation using the finite element method.  相似文献   
80.
We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.  相似文献   
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