SiO2图形化蓝宝石衬底对GaN生长及LED发光性能的影响

为了提高氮化镓(GaN)基发光二极管(LEDs)的发光性能,采用等离子体增强化学气相沉积(PECVD)在蓝宝石衬底上沉积SiO_2薄膜,经过光刻和干法刻蚀技术制备了SiO_2图形化蓝宝石衬底(SiO_2 patterned sapphire substrate, SPSS),利用LED器件的外延生长和微纳加工技术获得了基于SPSS的GaN基LED器件。通过分析GaN外延层晶体质量、光提取效率和LED器件性能,重点研究了SPSS对GaN生长及LED发光性能的影响。实验及模拟仿真结果表明,与常规图形化蓝宝石衬底(Conventional patterned sapphire substrate, CPSS)相比,SPSS上生长的GaN外延层位错密度较低,晶体质量较高,SPSS-LED的光提取效率提高26%、光输出功率和亮度均提高约5%。     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag20 film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique, a series of the single-phased Ag20 films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2：3 by changing substrate temperature （Ts）. Effects of the Ts on the microstructure and optical properties of the films are investigated by using X-ray diffractometry, scanning electron microscopy and spectrophotometry. The single-phased Ag20 films deposited at values of Ts below 200℃ are （111） preferentially oriented, which may be due to the smallest free energy of the （111） crystalline face. The film crystallization becomes poor as the value of Ts increases from 100℃ to 225℃. In particular, the Ag20 film deposited at Ts=225℃ loses the （111） preferential orientation. Correspondingly, the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure. With the increase of Ts value, the transmissivity and the reflectivity of the films in the transparent region are gradually reduced, while the absorptivity gradually increases, which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on γ-LiAlO2 （302） substrates

A method of clarifying bioaerosol particles is proposed based on T-matrix. Size and shape characterizations are simultaneously acquired for individual bioaerosol particles by analyzing the spatial distribution of scattered light. The particle size can be determined according to the scattering intensity,while shape information can be obtained through asymmetry factor(AF) . The azimuthal distribution of the scattered light for spherical particles is symmetrical,whereas it is asymmetrical for non-spherical ones,and the asymmetry becomes intense with increasing asphericity. The calculated results denote that the 5 –10 scattering angle is an effective range to classify the bioaerosol particles that we are concerned of. The method is very useful in real-time environmental monitoring of particle sizes and shapes.     

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

采用双石英棱镜对的掺钛蓝宝石自锁模激光器

给出了双棱镜对二、三阶色散的解析式。报道了采用双石英棱镜对的掺钛蓝宝石自锁模激光器的实验结果，获得与理论分析一致的结论。     

Si(111)衬底GaN薄膜的制备与特性

用溅射后退火反应法在Si(111)衬底上制备的高质量GaN薄膜. XRD, XPS, SEM和PL测量结果表明该方法制备的GaN是六角纤锌矿结构的多晶. GaN的最大晶粒尺寸约为100 nm. 在354 nm处发现强室温光致发光峰, 带隙相对于体GaN发生了轻微蓝移.