CdSe和ZnO量子点的拉曼光谱研究

本文介绍了用拉曼光谱研究CdSe和ZnO两种Ⅱ Ⅳ族量子点材料的结果,对拉曼峰进行了指认。观察到的光学声子峰位的移动被认为是由量子限制效应引起。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

量子算法的NMR实现方法

量子计算机是一种以量子耦合方式进行信息处理的装置[1 ] 。原则上 ,它能利用量子相干干涉方法以比传统计算机更快的速度进行诸如大数的因式分解、未排序数据库中的数据搜索等工作[2 ] 。建造大型量子计算机的主要困难是噪音、去耦和制造工艺。一方面 ,虽然离子陷阱和光学腔实验方法大有希望 ,但这些方法都还没有成功实现过量子计算。另一方面 ,因为隔离于自然环境 ,核自旋可以成为很好的“量子比特” ,可能以非传统方式使用核磁共振 (NMR)技术实现量子计算。本文介绍一种用NMR方法实现量子计算的方法 ,该方法能够用比传统方法少的步骤解决一个纯数学问题。基于该方法的简单量子计算机使用比传统计算机使用更少的函数“调用”判断一未知函数的类别。     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

Multiparty Quantum Secret Sharing of Key Using Practical Faint Laser Pulses

Based on a bidirectional quantum key distribution protocol [Phys. Rev. A 70 (2004)012311], we propose a (m-1, m-1)-threshold scheme of m (m≥3)-party quantum secret sharing of key by using practical faint laser pulses. In our scheme, if all the m-1 sharers collaborate, they can obtain the joint secret key from the message sender. Our scheme is more feasible according to the present-day technology.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

求解一类非单调线性互补问题的宽邻域内点方法及其计算复杂性

对于一类非单调线性互补问题给出了一种新的算法——宽邻域内点算法，并讨论了其计算复杂性。