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91.
计算机光学元件是纯相位元件,能够产生任意形状的波面分布,但存在着加工工艺过于复杂的缺点。目前出现了用数字化元件实现计算机光学元件的方法,在这些方法中经常要面临黑栅效应的干扰。利用傅里叶光学理论研究了黑栅效应对具体元件的影响程度,找出了影响黑栅效应强弱的因素,并用MATLAB软件进行了模拟。模拟结果表明:减小黑栅的宽度可使光能量向接收屏中央集中,有效降低黑栅效应的干扰。  相似文献   
92.
A RATIO method for analysis of intensity changes in time‐resolved pump–probe Laue diffraction experiments is described. The method eliminates the need for scaling the data with a wavelength curve representing the spectral distribution of the source and removes the effect of possible anisotropic absorption. It does not require relative scaling of series of frames and removes errors due to all but very short term fluctuations in the synchrotron beam.  相似文献   
93.
The influence of boron as a function of coverage on molecular beam epitaxial Si growth on Si(1 1 1) surface was systematically studied by reflection high-energy electron diffraction. At boron coverage above 0.3 monolayer regular oscillations occur with a period typically for two-bilayers, whereas at lower boron coverage a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. This behaviour can be attributed to a superposition of a bilayer and a two-bilayer dominated growth mode. The appearance of these two growth modes is discussed in terms of an initial surface defect-induced nucleation of bilayer-high Si islands and the formation of two-bilayers-high Si islands on top of the van der Waals like boron-covered surface, respectively. We suggest that these surface defects are of intrinsic nature, and their number only depends on the amount of boron at the surface. The oscillations become regular during further Si deposition with a bilayer period, indicating a diminishing influence of the layer/substrate interface on the growth processes.  相似文献   
94.
A series of barium hexaferrite nanoparticles (BaO·nFe2O3) with different n values were prepared by the sol-gel method, using goethite and Ba carbonate as raw materials. Phase identification of the samples was investigated by X-ray diffraction (XRD). XRD investigations show that the samples with n=5 and calcined at temperatures higher than 875 °C are single-phase Ba ferrite. An average crystallite size of 22 nm was obtained for the single-phase sample with minimum calcining temperature of 875 °C, using the Scherrer's formula. The morphology of the samples was checked by transmission electron microscope (TEM) and magnetic properties were measured by a sensitive permeameter. The results show that the samples have nonzero coercivities, which shows the particle size are not less than the critical size of Ba ferrite and then are not superparamagnet.  相似文献   
95.
The conceptual of Hefei Advanced Light Source, which is an advanced VUV and Soft X-ray source, was developed at NSRL of USTC. According to the synchrotron radiation user requirements and the trends of SR source development, some accelerator-based schemes were considered and compared; furthermore storage ring with ultra low emittance was adopted as the baseline scheme of HALS. To achieve ultra low emittance, some focusing structures were studied and optimized in the lattice design. Compromising of emittance, on-momentum and off-momentum dynamic aperture and ring scale, five bend acromat (FBA) was employed. In the preliminary design of HALS, the emittance was reduced to sub nm·rad, thus the radiation up to water window has full lateral coherence. The brilliance of undulator radiation covering several eVs to keVs range is higher than that of HLS by several orders. The HALS should be one of the most advanced synchrotron radiation light sources in the world.  相似文献   
96.
王振坤  顾祥龙  曹锐 《强激光与粒子束》2019,31(11):113002-1-113002-8
利用物理光学法计算了高功率微波在建筑物内的耦合场分布。根据建筑物墙壁和窗户的透射率可以得到墙壁内侧的透射场,将它代入到矢量衍射公式中直接计算出在整个建筑物内的透射场;根据建筑物地面的反射率得到地板表面的反射场,将它代入到矢量衍射公式中可计算出整个建筑物内的反射场;对透射场与反射场进行矢量相加,得到叠加场。将本文方法得到的场分布情况和时域有限差分法得到的场分布进行比较,二者结果一致。物理光学法的优点在于其物理图像清晰,计算量小,计算速度快,适合应用在大型建筑物内部耦合场分布计算上。  相似文献   
97.
A design of ultrathin crystalline silicon solar cell with Si3 N4 circular truncated cone holes(CTCs) arrays on the top is proposed. In this article, we perform an optical simulation of the structure. The finite-difference time-domain method is used to calculate the optical absorption of different periods, radius of top and bottom circles and depth of Si3 N4 CTCs. The short-circuit current density generated by the optimized cells(30.17 mA/cm~2) is 32.44% more than the value gained by control group(with flat Si3 N4). Then adding a layer of back silver to allow us to better analyze optical absorption. Later, we simulate the optimization of the same configuration of different silicon thicknesses andfind that our structure does enhance the light absorption. This work uses a combined path towards achieving higher photocurrent ultrathin crystalline silicon solar cells by constructing the texture of anti-reflection coating.  相似文献   
98.
The crystals and the powder samples of β-alanine were studied in the wide temperature range by adiabatic calorimetry, differential scanning calorimetry, IR- and Raman spectroscopy and X-ray diffraction. No phase transitions could be observed. A small anomaly observed at about 256 K in the Cp(T) dependences measured for the samples re-crystallized from water was shown to be due to the presence of a small (about 0.14% of the total sample mass) amount of solvent inclusions. This anomaly was not observed in the solvent-free samples, either powders or single crystals.  相似文献   
99.
X-Ray diffuse scattering from a series of examples where the reason for the existence of incommensurable features is fairly well understood, is described. They include in particular non stoichiometric compounds such as [DIPS Φ4(l3)0.76] and such as intercalated graphite RbC24. and quasi one dimensional conductors. A particular emphasis is given on various 1 - D conductors and to the relation of the incommensurability to the characteristics of the electron conduction bands.  相似文献   
100.
The method of Fourier transforms is applied to the calculation of sharp (coherent) and diffuse (incoherent) scattering of modulated structures and quasicrystals. It is shown that the fundamental difference between both may best be described by introducing different distribution functions of atoms, before applying modulations of the structure.  相似文献   
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