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81.
Yang Lingxia Ge Debiao Wei Bing 《International Journal of Infrared and Millimeter Waves》2003,24(11):1893-1897
A modified formulation for fringe component of diffraction coefficient is implemented to TD-EEC method. An example of diffraction by perfectly conducting plate is used to illustrate our scheme. Comparing with the FDTD results we observe that the improved expression for fringe component is more accurate than that of Michaeli's formulation. This high frequency time domain technique is available for treating the bistatic scattering problems for millimeter waves. 相似文献
82.
83.
二元光学波面变形器件的研究 总被引:4,自引:0,他引:4
基于计算全息原理设计了二元光学波面变形器件,一块二元光学器件的衍射效率比计算全息可提高4倍,高斯波面整形需要二块整形光学器件,二元光学器件的激光利用率比计算全息提高16倍,而且制做工艺简单. 相似文献
84.
Manju Rajeswaran Thomas N. Blanton David R. Whitcomb Nicholas Zumbulyadis Brian J. Antalek Scott T. Misture 《Journal of solid state chemistry》2006,179(4):1053-1059
In continuation of our interest in solid-state structures of silver complexes of photographic importance, the structure for silver benzotriazole (AgBZT), has now been obtained. The preferred method for solving crystal structures is via single-crystal X-ray diffraction (XRD). However, for some materials, growing single crystals of appropriate size and quality is often difficult or even impossible. AgBZT is an example of such a silver complex with poor solubility. The usual routes to preparing single crystals using recrystallization from a cooperating solvent resulted in polycrystalline powder samples. We propose a crystal structure for AgBZT, solved from synchrotron X-ray powder diffraction data, using a direct-space Monte Carlo simulated annealing approach. AgBZT crystals are monoclinic, (P21/c), with unit cell dimensions, a=14.8052(3) Å, b=3.7498(4) Å, c=12.3495(12) Å, and β=114.200(6)°. The AgBZT complex is constructed from all three of the Benzotriazole (BZT) nitrogens bonding to a separate silver atom. As a consequence of this bonding mode, the structure is a highly cross-linked, coordination polymer. 相似文献
85.
With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film. 相似文献
86.
Starting from the vectorial Rayleigh diffraction integral formula and without using the far-field approximation, a solution of the wave equation beyond the paraxial approximation is found, which represents vectorial non-paraxial elliptical Gaussian beams in free space. The far-field expressions for non-paraxial Gaussian beams and elliptical Gaussian beams can be regarded as special cases treated in this paper. Some basic propagation properties of vectorial non-paraxial elliptical Gaussian beams, including the irradiance distribution, phase term, beam widths and divergence angles are studied. Numerical results are given and illustrated. 相似文献
87.
88.
O. Maksimov P. Fisher M. Skowronski P.A. Salvador M. Snyder J. Xu X. Weng 《Journal of Crystal Growth》2008,310(11):2760-2766
MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2¯]MgO(0 0 1)[1 0 0]YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy. 相似文献
89.
Juguan Gu Juguan Gu Daomu Zhao Zhangrong Mei Zhangrong Mei Haidan Mao Haibin Xu 《Optik》2004,115(11-12):529-532
By means of Collins diffraction integral formula in the paraxial approximation and based on the fact that a hard aperture function can be expanded into a finite sum of complex Gaussian functions, an approximate analytical expression for linearly polarized Bessel-Gaussian beams passing through a paraxial ABCD optical system with an annular aperture has been derived. The results provide more convenient for studying their propagation and transformation than the usual way by using diffraction integral directly. By using the analytical expression and the diffraction integral formula some numerical simulations are done to illustrate for the propagation characteristics of a linearly polarized Bessel-Gaussian beam through an optical system with an annular aperture. 相似文献
90.
利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜,利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入(辐照)薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响,结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降,而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H+离子注入形成的氢化物是引起相变点的变化的主要因素。 相似文献