缺陷TiO2中铁磁性的第一性原理计算

计算钛空位（V_Ti）和氧空位（V_O）共存情况下未掺杂金红石TiO₂的铁磁性.发现V_O可以产生局域磁矩,由它引起的自旋极化比V_Ti引起的更加局域,导致V_O之间的铁磁耦合作用弱于V_Ti之间的铁磁耦合作用.V_Ti之间的铁磁耦合在引入V_O之后进一步加强.V_O引入的电子调制两个分离的V_Ti之间的长程铁磁耦合.加入V_Ti之后,两个V_O的磁矩猝灭,当V_O的数量多于V_Ti的数量二倍时,V_O会对磁矩有贡献.结果与实验发现的V_O可以提高铁磁有序,并且总的磁矩会随着V_O数量的增多而增加的结果符合很好.     

Climb via vacancy diffusion of edge dislocations in 2D dislocation microstructures

The prevention of strength degradation of components is one of the great challenges in solid mechanics. In particular, at high temperatures material may deform even at low stresses, a deformation mode known as deformation creep. One of the microstructural mechanisms that governs deformation creep is dislocation motion due to the absorption or emission of vacancies, which results in motion perpendicular to the glide plane, called dislocation climb. However, the importance of the dislocation network for the deformation creep remains far from being understood. In this study, a climb model that accounts for the dislocation network is developed, by solving the diffusion equation for vacancies in a region with a general dislocation distribution. The definition of the sink strength is extended, to account for the contributions of neighbouring dislocations to the climb rate. The model is then applied to dislocation dipoles and dislocation pile-ups, which are dense dislocation structures and it is found that the sink strength of dislocations in a pile-up is reduced since the vacancy field is distributed between the dislocations. Finally, the importance of the results for modelling deformation creep is discussed.     

Cu、N空位对Cu_3N的电子结构、电学和光学性能影响的第一性原理研究

本文采用基于密度泛函理论的第一性原理计算方法,研究了立方相Cu_3N晶体中含Cu、N空位体系的稳定性、电学、光学性能.研究结果表明含Cu空位和N空位体系的结构比较稳定,Cu空位和N空位降低了体系的导电性,但增加了体系的透射率;含Cu空位和N空位体系的禁带宽度均大于Cu_3N体系,说明实验中制备的Cu_3N有时表现为绝缘体的可能原因为体系中存在Cu空位或N空位.     

Interatomic potentials in transition metals

The different roles played by the valence s and d electrons in determining the bulk properties of pure transition metals is described. In the light of this the expected behaviour of the inert gas-metal and metal-metal interatomic potentials is discussed.     

Study of oxygen vacancy ordering in mullite at high temperatures

High temperature X-ray diffraction and quenching experiments of mullite single crystals with Al₂O₃:SiO₂ ratio 2:1 have been performed to investigate the stability of the oxygen vacancy ordering close to the melting point of mullite. The experiments show that the structure of mullite exhibits an extremely stable, temperature-independent incommensurate modulation. Inspection of satellite reflections at different temperatures leads to the conclusion that the ordering scheme of oxygen vacancies after the crystallization of mullite persists to the melting point and does not show any disordering effects. The experimental results are in agreement with former theoretical calculations using a statistical mechanics approach which yield the critical temperature T_c > 3000°C.     

钙钛矿型纳米BaFeO3的制备、结构表征及铁磁性研究

采用溶胶-凝胶法制备出钙钛矿型纳米BaFeO₃粉末,利用X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)分析研究了其微观结构及形貌,结果表明：胶体试样经800℃退火处理后,形成了20nm左右的钙钛矿型BaFeO₃粉末,其(110)面晶面间距为0.280nm左右,(100)面晶面间距为0.401nm左右.利用振动样品磁强计(VSM)研究了纳米BaFeO₃粉末的室温铁磁性能,测量结果表明：在室温条件下,纳米BaFeO关键词： 溶胶-凝胶法 3')" href="#">钙钛矿型纳米BaFeO₃ 铁磁性 氧空位     

Luminescence Study of ZnS Quantum Dots Prepared by Chemical Method

We report synthesis of ZnS quantum dots by chemical method at room temperature. In this technique, ZnS quantum dots are produced by simple chemical reactions where zeolite, acts as matrix, plays the key role in controlling particle growth during synthesis. Quantum dots exhibit luminescence properties such as Zn²⁺ related emission, efficient low voltage electroluminescence, and super linear voltage-brightness EL characteristics. This study demonstrates the technological importance of semiconductor nanosystems prepared by low cost chemical route.     

Ambient dependence of visible emissions in SrTiO3

We investigated the visible emission property of SrTiO₃ (STO) single crystals with high temperature annealing in some ambient conditions. We found that the green emission in STO, which should be associated with intermediate states originating from functional ionic defects inside the samples, such as cation/oxygen vacancies, showed strong ambient dependence. While high temperature annealing in the O₂ atmosphere suppressed the intensity of visible emission, annealing in an O₂-free atmosphere, such as N₂ or H₂, increased it. The broad visible emissions were fitted with three sub-modes, whose intensities showed different evolutions with respect to the ambient condition. Our study demonstrated the systematic development of defect states with the amount of the oxygen vacancies in STO.     

Formation Enthalpy Calculation of Oxygen Vacancy Defect in Doped Lithium Niobate Crystals

The relationship between temperature and oxygen vacancy concentration is deduced in this paper. Based on the data of thermal weight-loss experiment, the formation enthalpies of congruent and several doped LN crystals have been calculated. It was found that the formation enthalpy of oxygen vacancies can be decreased evidently by doping valence-changeable ions. The experimental results were discussed and a new reduction process of the photorefractive LN crystal at a relatively low temperature was proposed, and the reduced crystals showed a good effect in practical use.