首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   19204篇
  免费   3131篇
  国内免费   2985篇
化学   15592篇
晶体学   346篇
力学   938篇
综合类   160篇
数学   689篇
物理学   7595篇
  2024年   75篇
  2023年   234篇
  2022年   619篇
  2021年   762篇
  2020年   1007篇
  2019年   798篇
  2018年   662篇
  2017年   694篇
  2016年   833篇
  2015年   772篇
  2014年   887篇
  2013年   1990篇
  2012年   1194篇
  2011年   1155篇
  2010年   901篇
  2009年   1137篇
  2008年   1067篇
  2007年   1057篇
  2006年   1090篇
  2005年   967篇
  2004年   957篇
  2003年   851篇
  2002年   769篇
  2001年   537篇
  2000年   598篇
  1999年   460篇
  1998年   403篇
  1997年   367篇
  1996年   366篇
  1995年   305篇
  1994年   293篇
  1993年   252篇
  1992年   215篇
  1991年   173篇
  1990年   128篇
  1989年   113篇
  1988年   100篇
  1987年   79篇
  1986年   70篇
  1985年   65篇
  1984年   60篇
  1983年   21篇
  1982年   41篇
  1981年   38篇
  1980年   27篇
  1979年   25篇
  1978年   17篇
  1977年   13篇
  1976年   15篇
  1973年   28篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
91.
用玻色子组态混合和玻色子表面δ相互作用研究核谱   总被引:2,自引:0,他引:2  
用玻色子组态混合波函数和玻色子表面δ相互作用研究了三玻色子核46Ti和54Cr的sdgIBMI的能谱和E2跃迁概率,理论计算结果令人满意,比sdIBMI能拟合出更多的能级和E2跃迁概率,而且它们的误差更小. 说明g玻色子在振动区也起着重要的作用,同时进一步证明了这种玻色子组态混合模型是成功的.  相似文献   
92.
In this paper, we consider a queueing system in which there are two exponential servers, each having his own queue, and arriving customers will join the shorter queue. Based on the results given in Flatto and McKean, we rewrite the formula for the probability that there are exactlyk customers in each queue, wherek = 0, 1,…. This enables us to present an algorithm for computing these probabilities and then to find the joint distribution of the queue lengths in the system. A program and numerical examples are given.  相似文献   
93.
This is meant to be a brief overview of the developments of research activities in Japan on organometallic compounds related to their use in electronic and optoelectronic devices. The importance of organometallic compounds in the deposition of metal and semiconductor films for the fabrication of many electronic and opto-electronic devices cannot be exaggerated. Their scope has now extended to thin-film electronic ceramics and high-temperature oxide superconductors. A variety of organometallic compounds have been used as source materials in many types of processing procedures, such as metal–organic chemical vapor deposition (MOCVD), metalorganic vapor-phase epitaxy (MOVPE), metal–organic molecular-beam epitaxy (MOMBE), etc. Deposited materials include silicon, Group III–V and II–VI compound semiconductors, metals, superconducting oxides and other inorganic materials. Organometallic compounds are utilized as such in many electronic and optoelectronic devices; examples are conducting and semiconducting materials, photovoltaic, photochromic, electrochromic and nonlinear optical materials. This review consists of two parts: (I) research related to the fabrication of semiconductor, metal and inorganic materials; and (II) research related to the direct use of organometallic materials and basic fundamental research.  相似文献   
94.
The detailed characterization of multifunctional hybrid organosilazane/organosilylamine telechelic oligomers by IR and 1H, 13C and 29Si NMR spectroscopy in one and two dimenions has been undertaken. The specific multifunctional oligomers, comprising NH/NH2 or SiCl functionalities depending on the monomer feed-ratio, were prepared from mono- and di-functionally reacted dichlorodimethylsilane (DDS) and mono-, di-, tri- and tetra-functionally reacted ethylenediamine (EDA). Varying the feed-ratio afforded control of the microstructures of the oligomers and the preparation of oligomers with, in some cases, conterminously located silicon–chlorine (SiCl) groups. The combination of the NMR methods with the IR technique has enabled the detailed microstructural characterization of the oligomers and the identification of the functionalities therein. This approach and the knowledge gained from the DDS/EDA system has been applied to the microstructural characterization of other hybrid organosilazane/silylamine preceramic telechelic oligomers.  相似文献   
95.
We study the stochastic dynamics of deposition-evaporation cooperative processes of dimers, trimers, etc., in two- and higher-dimensional lattices. The dimer system in bipartite lattices allows for an exact solution of dynamic correlations and scaling functions by means of a quantum spin equivalence. Autocorrelations exhibit a diffusive asymptotic kinetics and crossovers of different dynamic regimes in highly anisotropic lattices. Monte Carlo simulations combined with finite-size scaling arguments support the validity of the diffusive picture in more general situations. Steady-state coverages and diffusion constants are obtained using mean-field approaches, spin wave calculations, and random walk analyses in nearly jammed configurations.  相似文献   
96.
 本文采用高压X光衍射方法在金刚石对顶压砧中在位地(in situ)研究了Fe68Co24Ni8(wt%)合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构,晶格常数a0=(0.287 0±0.000 1) nm,体积V0=(7.119±0.007) cm3/mol,密度ρ0=(7.981±0.008) g/cm3;在20.9 GPa附近出现bcc→hcp结构相变,两相共存压力区约10 GPa,在此区域内有晶面间距d(002)hcp=d(110)bcc,且原子平面(002)hcp//(110)bcc,hcp相比bcc相体积减小(0.33±0.02) cm3/mol;高压相hcp结构的晶格参数比值c/a=1.608±0.004;相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%;用Murnaghan状态方程对实验数据进行最小二乘法拟合,得到bcc相B0=(130±13) GPa,B0'=12.6±0.5;hcp相V0=(6.62±0.04) cm3/mol,B0=(243±21) GPa,B0'=6.8±0.3;对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。  相似文献   
97.
Thin films of polystyrene (PS), poly(methyl methacrylate) (PMMA) and polystyrene-polyacrylonitrile copolymer (PS-AN), containing various embedded transition-metal complexes, have been studied by FTIR microscopy. The spatial distributions of the transition-metal carbonyl complexes throughout the thin organic polymer films have been determined by a two-dimensional IR mapping procedure. The spectral variations observed in the distribution of the metal carbonyls throughout the different polymer films are discussed. The IR data show that the technique used to prepare the organometallic-embedded thin films (viz. freeze-drying of solutions followed by hot mechanical pressing of the residues) does in general lead to homogeneous films which may eventually find industrial application, e.g. as membrane sensors for small molecules.  相似文献   
98.
The structural phase transition from orthorhombic (T) phase to tetragonal (T′) phase in substituted La2−x R x CuO4 (R = Pr, Nd, Sm, Eu and Gd) and T′ to T-phase in Pr2−x M x CuO4−y (M = Sr, Ca) has been studied by X-ray diffraction technique. The T-phase of La2CuO4 is transferred to T′ phase abruptly atx=0.8, 0.4, 0.4, 0.3 and 0.4 respectively for substitution of Pr, Nd, Sm, Eu and Gd for La in La2CuO4 without evidence of the T* phase. The T′ structure of Pr2CuO4 (x = 0.0) gets transformed to the T* structure at 30% Ca doping (x=0.6) and then to the T structure at 50% Ca doping (x=1.0), while for Sr-contentx=0.0, 0.4 and 1.0 it shows T′, T* and T structure respectively.  相似文献   
99.
S G Ingle  J G Dupare 《Pramana》1991,36(2):167-177
It is found that the unrelaxed impurity dipoles can arrange themselves linearly in the structure joining each other end-to-end in pseudocubic [110] direction at the tetragonal to the orthorhombic phase transition. It is shown that this alignment precedes the domain formation at the phase transition, which implies quick movements of the dipoles in the structure, and a strong dipolar interaction. The experiments with the application of dc fields to the crystals showed that the dipolar interaction becomes stronger with the field. The dipoles can see each other across the existing domain walls implying the large distance nature of the interaction. The observation of impurity clusters arranged in pseudocubic [110] direction confirmed the large distance nature of the interaction. It is concluded that this strong, large distance interaction is very interesting in as much as such an interaction of dipoles forms the basis of ferroelectricity.  相似文献   
100.
转动喇曼散射截面的群论计算   总被引:1,自引:1,他引:0  
杨伯君 《光学学报》1991,11(6):09-513
本文利用群链U(4)U(3)O(3)描述双原子分子N_2和O_2振转谱的对称性质,并利用群论方法计算了N_2和O_2分子转动喇曼散射的跃迁矩阵元,给出了它们的转动喇曼散射的截面。结果与实验较好地符合。  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号