纳腔等离激元对分子上和分子旁边的隧穿电子诱导发光的作用研究

本文使用含时量子主方程,从理论上计算了当分子或者等离激元分别被激发的情形下等离激元-分子耦合体系发光特性的时间和光谱演化,并在此基础上讨论了纳腔等离激元在扫描隧道显微镜（STM）诱导发光中发挥的不同作用.当STM针尖在分子上方,隧穿电子可以直接激发分子时,纳腔等离激元的主要作用是通过提高分子的辐射速率来增强其发光,此时耦合体系表现出具有分子特征的尖锐发光峰.另一方面,当STM针尖非常靠近分子边缘但没有载流子注入直接激发分子时,等离激元-分子之间的相干耦合会在这两个量子客体之间产生相消干涉,导致在分子激子能量附近出现法诺共振,使我们观察到具有法诺凹谷特征的等离激元发光光谱.     

二维铁电材料α-In2Se3 表面分子束外延生长Pb 纳米岛的STM 研究

铁电材料拥有自发电极化, 不同的极化方向会对异质结的电子结构产生可逆的和非易失性的影响. 本工作采用分子束外延技术在二维铁电材料α-In2Se3 衬底上成功制备了 Pb 纳米岛构建 Pb/α-In2Se3 超导铁电异质结,并通过扫描隧道显微镜表征了其表面原子结构与电子结构. 进一步的扫描隧道谱测量显示不同层厚 Pb 岛的量子阱态消失, 并且我们在4.5 K 的温度下没有观察到超导能隙, 表明铁电衬底会影响 Pb 岛的电子结构, 甚至其超导特性. 这些发现为理解铁电衬底对超导性的影响提供了参考, 并为调控低维量子材料中的电子结构及超导性提供了新的思路.     

响应面方法计算HTR-10余热排出系统物理过程的失效概率

在核电站安全研究中，概率安全评价方法已经得到了广泛的应用.但是对于采用非能动设计的核电站系统，其可靠性分析的研究还处于初级阶段.非能动系统的失效不但要考虑常规可靠性分析中考虑的设备失效，还要考虑物理过程的失效.物理过程失效概率的计算方法和能动系统可靠性分析方法完全不同.本文给出物理过程失效的数学描述，介绍了一次二阶矩法、响应面方法，并且应用响应面方法计算了清华大学核能技术设计研究院10MW高温气冷实验堆(HTR-10)余热排出系统失效概率的近似值. 关键词： 概率安全评价 非能动系统 可靠性 响应面     

超强激光场中氘原子电离几率的研究

研究了在相对论领域内,超强激光场的不同条件（频率、强度、脉冲波形磁场分量）对氘原子电离几率的影响,研究表明：电离几率随激光强度的增加而增加,随激光频率的增加而减少。而激光脉冲波形对电离几率的影响仅在激光无磁场分量时比较显著。激光场的磁场分量对原子的电离有一定的影响。     

Stationary states of crystal growth in three dimensions

A new Markov process describing crystal growth in three dimensions is introduced. States of the process are configurations of the crystal surface, which has a terrace-edge-kink structure. The states are continuous along edges but discrete across edges, in accordance with the very different rates for the two types of captures of particles. Stationary distributions, describing steady crystal growth, are found in general. To our knowledge, these are the first examples of stationary distributions for layered crystal growth in three dimensions. The steady growth rate and other quantities are obtained explicitly for two interacting edges. For many interacting edges, growth behavior is determined (a) in various asymptotic regimes including thermodynamic limits, (b) via simulations, and (c) using series (cluster) expansions in the slope of the surface, the first three coefficients being computed. The theoretical growth rates show a marked dependence on surface dimensions. This may contribute to the size dependence and dispersion in the observed growth rate of small crystals.     

天冬氨酸在Cu(001)表面吸附的扫描隧道显微镜研究

用扫描隧道显微镜(STM)研究了室温下天冬氨酸在Cu(001)表面的吸附行为.实验发现,在较 低的覆盖度下,天冬氨酸分子在Cu(001)表面存在两种吸附状态.从STM数据估算出两种吸附 状态下天冬氨酸分子在Cu(001)表面的扩散激活能分别为079±001eV,088±005eV. 随着覆盖度的提高,天冬氨酸分子最终在Cu(001)表面形成一均匀衬度的吸附层,但并不形 成有序吸附结构,也不能使台阶发生小面化.天冬氨酸分子的这些吸附特点是迄今研究过的 所有氨基酸在Cu(001)表面吸附时不具有的. 关键词： 表面吸附 扫描隧道显微镜 氨基酸     

空地激光通信系统中捕获子系统仿真

针对空地激光通信系统,推导了复合光栅螺旋扫描捕获方法所需的最大捕获时间、平均捕获时间和捕获概率的计算公式,建立了捕获性能仿真模型,分析了捕获时间和捕获概率的关系,以及空中平台的相对速度对捕获系统的影响和抑制方法.仿真结果表明,当通信终端的捕获不确定区域为50mrad,扫描重叠因子为0.12时,捕获探测器的信噪比大于6时,空地激光通信系统总的捕获概率优于95%,最大捕获时间约为36s,平均捕获时间约为12s.     

Chiral selective tunneling induced graphene nanoribbon switch

An armchair graphene nanoribbon switch has been designed based on the principle of the Klein paradox. The resulting switch displays an excellent on-off ratio performance. An anomalous tunneling phenomenon, in which electrons do not pass through the graphene nanoribbon junction even when the conventional resonance condition is satisfied, is observed in our numerical simulations. A selective tunneling rule is proposed to explain this interesting transport behavior based on our analytical results. Based on this selective rule, our switch design can also achieve the confinement of an electron to form a quantum qubit.      

高反射膜激光零几率损伤阈值的实验研究

在确定光学薄膜激光损伤阈值的实验数据处理过程中,发现一些样品的数据点分布偏离直线型式。对此,用国际标准规定的零几率来确定损伤阈值的同时,对测试数据点采用了不同的非直线拟合,也得到一个零几率损伤阈值。比较两者差异,并与实验测试结果对照,发现这些样品采用非直线拟合得出的零几率损伤阈值与实际情况更接近一些。     

Quantum dot resonant tunneling FET on graphene

At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance.