Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon

High purity n-type silicon single crystal with resistivity in the order of 4000 Ω cm has been irradiated with high-energy oxygen ions at room temperature up to a fluence of 5E15 ions/cm². The energy of the beam was varied from 3 to 140 MeV using a rotating degrader to achieve a depthwise near-uniform implantation profile. Radiation induced defects and their dynamics have been studied using positron annihilation spectroscopy along with isochronal annealing up to 700 °C in steps of 50 °C for 30 min. After annealing the sample at 200 °C for 30 min, formation of silicon tetravacancies has been noticed. The formation of the tetravacancies was found to be due to agglomeration of divacancies present in the irradiated sample. An experimentally obtained positron lifetime value of 338±10 ps has been reported for silicon tetravacancies, which has a very close agreement with the value obtained from recent theoretical calculations. The tetravacancies were found to dissociate into trivacancy clusters upon further annealing. The trivacancies thus obtained were observed to agglomerate beyond 400 °C to form larger defect clusters. Finally, all the defects were found to anneal out after annealing the sample at 650 °C.     

Considering the effect of different arrangements of pentagons on density of states of capped carbon nanotubes

We have used a non-equilibrium surface Green's function matching formalism combined with a tight-binding Hamiltonian to consider the effect of different arrangements of pentagon rings on localization of density of states at the tip regions of semi-infinite capped carbon nanotubes. The transfer matrixes are obtained by an iterative procedure. The results demonstrate that the positions of the peaks near Fermi energy are remarkably affected by the relative locations of pentagons. It is observed that in thin nanotubes, carbon atoms belonging two neighboring pentagon rings have significant contribution in the localized states near fermi energy. From our calculations, it turns out that the metallic or semiconducting behavior of capped nanotubes in the tip regions depends on the metallic or semiconducting nature of their nanotube stems.     

堪为物理学第三分支的计算物理

本文是作者1982年在中国访问时所作的讲演,论述物理学各领域的前沿工作,用许多事例说明计算物理对推动物理理论的重大意义。文中还指出计算物理在其性质、方法及需要等方面不同于和独立于解析的理论物理和实验物理,而成为物理学的第三分支。     

Effect of Ni content on the diffusion-controlled growth of the product phases in the Cu(Ni)–Sn system

A strong influence of Ni content on the diffusion-controlled growth of the (Cu,Ni)₃Sn and (Cu,Ni)₆Sn₅ phases by coupling different Cu(Ni) alloys with Sn in the solid state is reported. The continuous increase in the thickness ratio of (Cu,Ni)₆Sn₅ to (Cu,Ni)₃Sn with the Ni content is explained by combined kinetic and thermodynamic arguments as follows: (i) The integrated interdiffusion coefficient does not change for the (Cu,Ni)₃Sn phase up to 2.5 at.% Ni and decreases drastically for 5 at.% Ni. On the other hand, there is a continuous increase in the integrated interdiffusion coefficient for (Cu,Ni)₆Sn₅ as a function of increasing Ni content. (ii) With the increase in Ni content, driving forces for the diffusion of components increase for both components in both phases but at different rates. However, the magnitude of these changes alone is not large enough to explain the high difference in the observed growth rate of the product phases because of Ni addition. (iv) Kirkendall marker experiments indicate that the Cu₆Sn₅ phase grows by diffusion of both Cu and Sn in the binary case. However, when Ni is added, the growth is by diffusion of Sn only. (v) Also, the observed grain refinement in the Cu₆Sn₅ phase with the addition of Ni suggests that the grain boundary diffusion of Sn may have an important role in the observed changes in the growth rate.     

Finsler geometry of topological singularities for multi‐valued fields: Applications to continuum theory of defects

Topological singularity in a continuum theory of defects and a quantum field theory is studied from a viewpoint of differential geometry. The integrability conditions of singularity (Clairaut‐Schwarz‐Young theorem) are expressed by a torsion tensor and a curvature tensor when a Finslerian intrinsic parallelism holds for the multi‐valued function. In the context of the quantum field theory, the singularity called an extended object is expressed by the torsion when the intrinsic parallelism is related to the spontaneous breakdown of symmetry. In the continuum theory of defects, the path‐dependency of point and line defects within a crystal is interpreted by the non‐vanishing condition of torsion tensor in a non‐Riemannian space osculated from the Finsler space, and the domain is not simply connected. On the other hand, for the rotational singularity, an energy integral (J‐integral) around a disclination field is path‐independent when a nonlinear connection is single‐valued. This means that the topological expression for the sole defect (Gauss‐Bonnet theorem with genus ) is understood by the integrability of nonlinear connection.

     

Bulk and surface electron transport in topological insulator candidate YbB6–δ

We report the study of transport and magnetic properties of the YbB_6–δsingle crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB_6–δ are shown to depend on the concentration of intrinsic defects, which is estimated to range from 0.09% to 0.6%. The pronounced variation of Hall mobility μ_H found for bulk holes is induced by the decrease of transport relaxation time from τ ≈ 7.7 fs for YbB_5.994 to τ ≈ 2.2 fs for YbB_5.96. An extra contribution to conductivity from electrons with μ_H≈ –1000 cm² V^–1 s^–1 and the very low concentration n /n_Yb≈ 10^–6 discovered below 20 K for all the single crystals under investigation is suggested to arise from the surface electron states appeared in the inversion layer due to the band bending. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Topological transition in coated wire medium

Employing nonlocal homogenization approach, we investigate the properties of a metamaterial consisting of parallel metallic wires with dielectric coating. We demonstrate that manipulation of dielectric contrast between wire dielectric shell and host material at fixed frequency results in dynamic switching of metamaterial dispersion regime from elliptic to the hyperbolic one, i.e. the topological transition takes place. It is proved that such transition can be induced by the variation of the metamaterial temperature. Our findings thus pave a way to the implementation of a tunable ‘elliptic‐hyperbolic’ metamaterial.     

Photo‐capacitance spectroscopy investigation of deep‐level defects in AlGaN/GaN hetero‐structures with different current collapses

We have investigated electronic deep levels in two AlGaN/GaN hetero‐structures with different current collapses grown at 1150 and 1100 °C by a photo‐capacitance spectroscopy technique, using Schottky barrier diodes. Three specific deep levels located at ～2.07, ～2.80, and ～3.23 eV below the conduction band were found to be significantly enhanced for severe current collapse, being in reasonable agreement with photoluminescence and capacitance–voltage characteristics. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapse phenomena of the AlGaN/GaN hetero‐structures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Steps, ledges and kinks on the surfaces of platinum nanoparticles of different shapes

Platinum nanoparticles with a high percentage of cubic-, tetrahedral- and octahedral-like shapes, respectively, have been synthesized by a shape-controlling technique that we developed recently [Ahmadi et al., Science 272 (June 1996) 1924]. High resolution transmission electron microscopy (HRTEM) is used here to directly image the atomic scale structures of the surfaces of these particles with different shapes. The truncated shapes of these particles are mainly defined by the {100}, {111}, and {110} facets, on which numerous atom-high surface steps, ledges and kinds have been observed. This atomic-scale fine structure of the surfaces of these particles is expected to play a critical role in their catalytic activity and selectivity.