Effect of 10 MeV electron irradiation on dye-sensitized solar cells

The effect of 10?MeV electrons’ irradiation on dye-sensitized solar cells (DSSCs) has been studied in this paper. J–V characteristics measurements were carried out in order to investigate the degradation of the cells in electron radiation environments. The short-circuit current (J_sc) and maximum power density (P_max) of cells decrease significantly after the electron irradiation. When the irradiation dose increases to 10?kGy, the initial maximum power decreases nearly by 50%. The influences of the electron irradiation on FTO, dye sensitizer and anode were studied to investigate the degradation mechanism of DSSC, respectively. The ultraviolet–visible spectra of FTO show that the absorption peaks of dye decrease, resulting in a decline of the FTO transmittance. According to the X-ray diffraction measurement results, it was found that the particle size of nano-crystalline TiO₂ had changed after the electron irradiation. With the help of SEM, the conglomeration of TiO₂ nano-particles appears after the electron irradiation.     

Ni-P-mCMC/mCS双极膜技术在成对电解制备糠醇、糠酸中的应用

以磷酸化试剂改性羧甲基纤维素钠(mCMC)制备了阳膜层,以戊二醛改性壳聚糖(mCS)制备了阴膜层溶胶,将阴膜层溶胶流延于阳膜层上,制备了P-mCMC/mCS双极膜,而后以化学镀方法在阳膜层表面镀镍,制备了Ni-P-mCMC/mCS双极膜,并应用于成对电合成糠醇(阴极室中)、糠酸(阳极室中)。在电场的作用下,双极膜中水电离后生成的H+透过mCMC阳离子膜进入阴极室,促进糠醛电还原生成糠醇过程的进行;OH-透过mCS阴离子膜进入阳极室,与糠醛电氧化生成糠酸过程中产生的H+结合生成H2O,以增大正向反应的速度。在电流密度为2.5×10-2A/cm2,30℃下电解,阴阳两极室的电解效率分别为83.0%和77.4%,电解槽电压稳定在3.0V左右。     

Effect of plating and incubation conditions on the detection of lactic acid bacteria after high hydrostatic pressure treatment

ABSTRACT

Lactic acid bacteria (Leuconostoc mesenteroides, Enterococcus faecalis, and Lactobacillus fermentum) were subjected to high hydrostatic pressures (HHPs) of 400 and 600?MPa at 25°C for 10?min in phosphate-buffered saline. Differential plating methods were applied to evaluate HHP-treated cell populations, assuming that healthy and injured cells during plate incubation survived maximum and minimal stress, respectively. The stress was altered by using several selective media in combination with aerobic or anaerobic incubation at 25°C or 30°C. E. faecalis was detectable after 600?MPa treatment while L. mesenteroides and L. fermentum were nondetectable. Specific combinations of incubation conditions were suggested to determine maximum and minimum viable counts of L. mesenteroides and E. faecalis. The difference between the maximum and minimum counts can be used to evaluate HHP-injured population with reduced risks to overestimate healthy and/or underestimate HHP-injured cells.     

Performance assessment of Cu2SnS3 (CTS) based thin film solar cells by AMPS-1D

A relative performance assessment of copper tin sulfide (CTS) thin film solar cells with different phases such as, cubic, tetragonal, and orthorhombic as an absorber layer has been carried out by AMPS-1D simulation software. Based on the proposed device architecture, the effects of thickness and carrier concentration for the absorber layer as well as the back metal contact with various work function are studied in order to improve the performance of CTS solar cell. It is found that 10¹⁸ cm⁻³ and 2500–3000 nm are optimum values for carrier concentration and thickness for all the investigated CTS absorber layer phases, respectively. On the other hand, back contact metal work function of 5.28 eV, 5.67 eV and 5.71 eV are identified to be the optimal values for cubic, tetragonal, and orthorhombic phases, respectively. We have analyzed in detail the output performance of CTS thin film solar cell with respect to its fabrication, which can serve a constructive research pathway for the thin film photovoltaic industry.     

Experimental study of the voids in the electroless copper deposits and the direct measurement of the void fraction based on the scanning electron microscopy images

Electroless copper deposits were plated on epoxy substrates in various plating solutions at either a high operating temperature (60 °C) or a low one (45 °C). Cross section samples were made using epoxy resin cured in room temperature, and then ground, polished and over-etched. The scanning electron microscopy (SEM) images of the over-etched cross section samples show voids in low temperature deposits and solid structure in high temperature ones. The surface morphology images also indicated such structures in low temperature samples. The SEM image of the cross section of a stand-alone deposit prepared on stainless steel substrate shows similar voids observed on etched cross section samples on epoxy board substrates. An image processing program was written using MATLAB to identify the voids in the over-etched cross sections of the deposits from low temperature solutions and thus the void fraction can be directly measured and compared with the previously published simulation results.     

Ellipsometry investigation of the effects of annealing temperature on the optical properties of indium tin oxide thin films studied by Drude-Lorentz model

Float glass substrates covered by high quality ITO thin films (Balzers) were subjected for an hour to single thermal treatments at different temperature between 100 °C and 600 °C. In order to study the electric and optical properties of both annealed and not annealed ITO-covered float glasses, ellipsometry, spectrophotometry, impedance analysis, and X-ray measurements were performed. Moreover, variable angle spectroscopic ellipsometry provides relevant information on the electronic and optical properties of the samples. ITO film is modeled as a dense lower layer and a surface roughness layer. The estimated optical density for ITO and the optical density of the surface roughness ITO layer increases with the annealing temperature. In the near-IR range, the extinction coefficient decreases while the maximum of the absorption in the near UV range shift towards low photon energy as the annealing temperature increases. Spectrophotometry was used to estimate the optical band-gap energy of the samples. The thermal annealing changes strongly the structural and optical properties of ITO thin films, because during the thermal processes, the ITO thin film absorbs oxygen from air. This oxygen absorption decreases the oxygen vacancies therefore the defect densities in the crystalline structure of the ITO thin films also decrease, as confirmed both by ellipsometry and X-ray measurements.     

Electroless copper plating on 3-mercaptopropyltriethoxysilane modified PET fabric challenged by ultrasonic washing

Electroless deposition of Cu on poly(ethylene terephthalate) (PET) fabric modified with 3-mercaptopropyltriethoxysilane was investigated. Morphology, composition, structure, thermal decomposing behavior of copper coating PET fabric after ultrasonic washing in water for 1 h were characterized by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), Raman spectrometer, X-ray diffraction (XRD), and thermogravimetric analysis (TG), respectively. Copper plating on modified fabric has good adherence stability and high electric conductivity before and after ultrasonic washing, while copper coating fabric without modification is easily destroyed during the washing process, which leads to the textile changing from conductor to dielectric. As the copper weight on the treated fabric is 28 g/m², the shielding effectiveness (SE) is more than 54 dB at frequency ranging from 0.01 MHz to 18 GHz.     

Influence of alkali metallization (Li, Na and K) on photoluminescence properties of porous silicon

We present results for alkali metallization effects on photoluminescence (PL) properties of porous silicon (PS). The metallization of PS was realized by immersion plating in solutions containing 3 mM LiNO₃, KNO₃ and NaNO₃ metal salts. The surface bond configuration of PS was monitored by Fourier transmission infrared spectroscopy (FTIR) and it was found that the PS surface was oxidized after metallization. Surface properties of PS were investigated by field emission scanning electron microscopy (FE-SEM) and it was found that the PS surface was covered by alkali metals for short immersion times. The PL intensity increased for critical immersion times and PL spectrum shifted to high energy region with the metallization. The experimental results suggest a possibility that the metallization provides a relatively easy way to achieve an increase in the PL intensity and oxidation of the PS surface.     

A novel process for electroless nickel plating on anodized magnesium alloy

In this paper, a novel palladium-free activation electroless nickel (EN) plating process, by which a TiB₂ powders contained intermediate film was used as catalyst, was introduced for anodized magnesium alloy AZ91D. The corrosion behavior of AZ91D without and with coating was compared and the bonding strength of the EN plating to the substrate was also measured. The results showed that the EN plating could easily take place on the intermediate catalytic layer, directly on which a smooth and compact Ni–P alloy layer without obvious flaws, about 20 μm thickness, was successfully deposited. The catalytic function was principally from TiB₂ powder. The adhesive tensile test indicated a good bonding strength of about 11 MPa between the substrate and the catalytic layer. An obvious passivation range and higher E_corr (−0.323 V) for the EN plating during anodic polarization in 3.5 wt.% NaCl solution, implied a typical character of a compact Ni–P alloy layer, with an effective protection for the substrate.     

脉冲偏压电弧离子镀CNx薄膜研究

用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CN_x薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp³键的含量,是CN_x薄膜的硬度和弹性模量获得大幅度调整的本质原因. 关键词： x薄膜')" href="#">CN_x薄膜 脉冲偏压 电弧离子镀 硬度