Novel mesophases in fluorine substituted banana-shaped mesogens

A new homologous series of achiral banana-shaped mesogens ('Dn') has been synthesized and studied by the classical techniques (optical microscopy, differential scanning calorimetry, X-ray diffraction, miscibility studies and electro-optic investigations). The short homologues (D6-D8) exhibit a two-dimensional phase 'B1_x' different from a B1 phase with a rectangular lattice. The longer homologues (D9-D14) present a mesophase which displays the defects of the B7 phase of the PIMB-NO₂ compounds. Nevertheless the D9-D14 mesophase is not miscible with the B7 phase, and contrary to B7, exhibits a bistable behaviour ('ferroelectric' type) suggesting at least a B7 variant.     

UV-Vis Spectrum and the Third-order Nonlinear Optical Properties of the Chiral Camphorderived β-diketonate Platinum Complexes

UV-Vis spectrum and the third-order nonlinear optical properties of the chiral camphor-derived β-diketonate have been studied at the B3LYP/6-31G* level. The results showed that the introduction of electron-drawing group-CF3 and-C3F7 on β-diketonate made the strongest absorption peak red-shift and the lowest energy absorption blue-shied. Introduction of-OC2H5 on the benzene or pyridine ring made the lowest energy absorption blue-shift. When the-C2H3 was introduced on the benzene or pyridine ring, the lowest energy absorption was red-shifted. Introduction of electron-donating group on β-diketonate can enlarge their nonlinear optical properties. On the contrary, the introduction of electron-drawing group dropped it down.     

基于偶氮苯衍生物的三阶非线性光开关性能的调控

偶氮苯衍生物因其具有特殊的共轭体系常用作光开关特性的三阶非线性光学（NLO）开关材料,但有部分带有特殊基团的偶氮类分子在一般条件下无法显示其性能.然而,这类分子在被调节之后能展示出优异的光控的NLO开关性能.以无光控的NLO开关性能的5-（N-4-偶氮苯基）氨甲基间苯二甲酸为研究对象,并对其潜在的光控NLO开关性能进行调控.经过调节后的这类分子在光照条件下能顺利地经历可逆的顺反异构化反应,且产生三阶非线性性能的转换.其Z-扫描实验结果显示处于反式构型的材料展示出反饱和吸收和自散焦特性;在光照之后,这类材料转化为顺式构型并展现出饱和吸收和自聚焦行为.三阶NLO性能的转换是由于材料的结构发生转变其内部电子产生重排,使得它们在激光刺激下产生不同的响应机制.     

Third-order Nonlinear Optical Properties of Octa-substituted Metal-free Phthalocyanine Thin Films

Third-order nonlinear optical susceptibility, χ⁽³⁾ of symmetrically octa-substituted metal-free phthalocyanine thin films measured by the third-harmonic generation technique are reported. The metal-free phthalocyanine has been found to show a χ⁽³⁾ (−3ω; ω,ω, ω) value as large as 7.73×10⁻¹² esu at 1.80 μm. The figure of merit, χ⁽³⁾/α, was estimated to be 4.17×10¹⁷ esu cm at 1.05 μm and 6.97×10¹⁶ esu cm at 1.65 μm. Both linear and third-order optical properties of liquid-crystalline metal-free phthalocyanines are discussed     

一种提高极值点处收敛精度的三阶WENO-Z格式

为了提高三阶WENO-Z格式在极值点处的计算精度,通过理论推导给出三阶WENO格式满足收敛精度的充分条件。采用泰勒级数展开的方式,推导给出所构造格式非线性权重的计算公式,并综合权衡计算精度和计算稳定性确定所构造格式的参数。通过两个典型的精度测试,验证了改进格式在光滑流场极值点区域逼近三阶精度。进一步选用激波与熵波相互作用和Richtmyer-Meshkov不稳定性等经典算例,证实了本文提出的改进格式WENO-PZ3相较其他格式（WENO-JS3和WENO-Z3）不仅具有较高的精度,而且降低了格式的耗散,提高了对流场结构的分辨率。     

芳香查尔酮衍生物的合成、理论计算及三阶非线性光学性质

合成了2种新的具有潜在应用价值的非线性光学(NLO)有机材料芳香查尔酮衍生物1-(呋喃-2-基)-3-(4-甲氧基苯基)丙烯酮(1)和1-(噻吩-2-基)-3-(4-甲氧基苯基)丙烯酮(2),并对其进行了NMR、IR和HR-MS结构表征。 采用4f相位相干成像技术测定了化合物1和2的三阶NLO性质并确定了相关参数:脉冲宽度4 nm,激光波长440 nm,化合物1:非线性吸收系数β=5.5×10^-10 m/W,非线性折射系数n₂=-2.1×10^-17 m²/W,三阶非线性极化率χ⁽³⁾=1.58×10^-11 esu;化合物2:β=-2.4×10^-10 m/W,n₂=0.3×10^-17 m²/W,χ⁽³⁾=0.50×10^-11 esu;并测定了紫外光谱和DSC曲线。 采用密度泛函方法计算了化合物1和2的轨道能量和极化率,结果表明电子转移能在分子内部进行,说明比较易于极化,展示了良好的非线性光学性质。     

Tracking problem under a time-varying topology

This paper studies the multi-agent tracking problem of a third-order maneuvering target under uncertain communication environments. Each tracking agent is assumed to be a third-order system and can only use its own and neighbors＇ position, velocity, and acceleration information to design its control input. In this work, the uncertain communication environments are modelled by a finite number of constant Laplacian matrices together with their corresponding scheduling functions. Sufficient conditions for the existence of a tracking strategy have been expressed in terms of the solvability of linear matrix inequalities. Finally, a numerical example is employed to demonstrate the effectiveness of the proposed tracking strategy.     

三阶色散影响下二阶孤子间互作用及抑制

在色散位移光纤中，研究了三阶色散影响下同相和反相二阶孤子之间的互作用，分析了同相和反相二阶孤子对衰变后时域波形和频域频移的变化，发现三阶色散使二阶孤子分裂出一大一小两个不同振幅的基阶孤子，并彼此分离，但孤子对中心频率频移量却减小。通过采用非线性增益控制的方法可以有效抑制二阶孤子间的互作用，使孤子保型传输而不发生衰变。同时通过周期性改变三阶色散系数，可以减小三阶色散的不利影响，抑制孤子中心频率的频移，使孤子对不偏离原来时间槽，稳定孤子传输。     

Gaussian Limiting Behavior of the Rescaled Solution to the Linear Korteweg–de Vries Equation with Random Initial Conditions

We analyze the asymptotic behavior of the rescaled solution to the linear Korteweg–de Vries equation when the initial conditions are supposed to be random and weakly dependent. By means of the method of moments we prove the Gaussianity of the limiting process and we present its correlation function. The same technique is applied to the analysis of another third-order heat-type equation.     

Large near resonance third order nonlinearity in GaN

We have studied third order nonlinearities, including two-photon absorption coefficient and nonlinear refractive index n ₂, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n ₂ and . The distribution of n ₂ versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large on the order of 10 cm/GW and large negative n ₂ with a magnitude on the order of several 10^–12 cm²/W were obtained. The at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode.