高温超导薄膜微波非线性研究的进展

文章介绍了高温超导薄膜微波非线性的主要特征，阐述了高温超导薄膜微波非线性产生的原因和相关的研究现状，指出了高温超导薄膜非线性研究中遇到的困难和尚未解决的问题．     

面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

Temperature dependence of excitonic luminescence from nanocrystalline ZnO films

The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect.     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。     

阿尔芬波加热研究的进展

本文概述了阿尔芬波加热的理论和实验情况。讨论了阿尔芬波加热的基本物理问题,并介绍了某些重要的实验结果。对在大托卡马克上采用阿尔芬波加热的可能性进行了全面论述。     

Effect of layer sliding on the interfacial electronic properties of intercalated silicene/indium selenide van der Waals heterostructure

Methods capable of tuning the properties of van der Waals (vdW) layered materials in a controlled and reversible manner are highly desirable. Interfacial electronic properties of two-dimensional vdW heterostructure consisting of silicene and indium selenide (InSe) have been calculated using density functional theory-based computational code. Furthermore, in order to vary the aforementioned properties, silicene is slid over a InSe layer in the presence of Li intercalation. On intercalation of the heterostructure, the buckling parameter associated with the corrugation of silicene decreases from 0.44 Å to 0.36 Å, whereas the InSe structure remains unaffected. Potential energy scans reveal a significant increase in the sliding energy barrier for the case of intercalated heterostructure as compared with the unintercalated heterostructure. The sliding of the silicene encounters the maximum energy barrier of 0.14 eV. Anisotropic analysis shows the noteworthy differences between calculated in-plane and out-of-plane part of dielectric function. A variation of the planar average charge density difference, dipole charge transfer and dipole moment have been discussed to elucidate the usability spectrum of the heterostructure. The employed approach based on intercalation and layer sliding can be effectively utilized for obtaining next-generation multifunctional devices.     

Intelligent Reflecting Surface–Assisted Wireless Secret Key Generation against Multiple Eavesdroppers

In this paper, we propose an improved physical layer key generation scheme that can maximize the secret key capacity by deploying intelligent reflecting surface (IRS) near the legitimate user aiming at improving its signal-to-noise ratio (SNR). We consider the scenario of multiple input single output (MISO) against multiple relevant eavesdroppers. We elaborately design and optimize the reflection coefficient matrix of IRS elements that can improve the legitimate user’s SNR through IRS passive beamforming and deteriorate the channel quality of eavesdroppers at the same time. We first derive the lower bound expression of the achievable key capacity, then solve the optimization problem based on semi-definite relaxation (SDR) and the convex–concave procedure (CCP) to maximize the secret key capacity. Simulation results show that our proposed scheme can significantly improve the secret key capacity and reduce hardware costs compared with other benchmark schemes.     

基于FDTD的时域混合方法及其在天线前门耦合数值模拟中的应用

强电磁脉冲环境下的平台-机载天线一体化耦合计算属于典型多尺度时域电磁计算问题,采用传统的FDTD方法数值模拟时,由于精细结构的存在导致网格量巨大,计算效率低下。介绍了一种将非均匀FDTD方法与细导线FDTD方法以及多网格集总元件FDTD方法相结合的时域混合方法,能够有效降低计算开销,结合并行计算技术,快速计算得到天线端口上耦合产生的瞬态电压和电流响应,并将该方法成功应用于无人机平台-天线一体化前门耦合数值模拟中。     

Characterization of inner layer thickness change of a composite circular tube using nonlinear circumferential guided wave:A feasibility study

The feasibility of using the nonlinear effect of primary circumferential guided wave (CGW) propagation for characterizing the change of inner layer thickness of a composite circular tube (CCT) has been investigated. An appropriate mode pair of the fundamental and double-frequency CGWs (DFCGWs) has been selected to enable the second harmonics of primary wave mode in the given CCT to accumulate along the circumferential direction. When changes in the inner layer thickness (described as the equivalent inner layer thickness) take place, the corresponding nonlinear CGW measurements are conducted. It is found that there is a direct correlation between change of equivalent inner layer thickness of the CCT and the relative acoustic nonlinearity parameter (Δβ) measured with CGWs propagating through one full circumference, and that the effect of second-harmonic generation (SHG) is very sensitive to change in the inner layer thickness. The experimental result obtained demonstrates the feasibility for quantitatively assessing the change of equivalent inner layer thickness in CCTs using the effect of SHG by primary CGW propagation.     

Electronic and optical properties of 3N-doped graphdiyne/MoS2 heterostructures tuned by biaxial strain and external electric field

The construction of van der Waals (vdW) heterostructures by stacking different two-dimensional layered materials have been recognised as an effective strategy to obtain the desired properties. The 3N-doped graphdiyne (N-GY) has been successfully synthesized in the laboratory. It could be assembled into a supercapacitor and can be used for tensile energy storage. However, the flat band and wide forbidden bands could hinder its application of N-GY layer in optoelectronic and nanoelectronic devices. In order to extend the application of N-GY layer in electronic devices, MoS₂ was selected to construct an N-GY/MoS₂ heterostructure due to its good electronic and optical properties. The N-GY/MoS₂ heterostructure has an optical absorption range from the visible to ultraviolet with a absorption coefficient of 10⁵ cm^-1. The N-GY/MoS₂ heterostructure exhibits a type-Ⅱ band alignment allows the electron-hole to be located on N-GY and MoS₂ respectively, which can further reduce the electron-hole complexation to increase exciton lifetime. The power conversion efficiency of N-GY/MoS₂ heterostructure is up to 17.77%, indicating it is a promising candidate material for solar cells. In addition, the external electric field and biaxial strain could effectively tune the electronic structure. Our results provide a theoretical support for the design and application of N-GY/MoS₂ vdW heterostructures in semiconductor sensors and photovoltaic devices.