Surfactant in the gaseous phase II. Influence on stability of foams and thin liquid films

The influence of the vapors ofn-amyl orn-decyl alcohol on the stability of single thin liquid films, single bubbles, and foam columns was determined. It was found that the presence of surfactant vapors lowered the stability of foams and single foam films. The mechanism of the destabilizing action of the surfactant vapors on wet, dynamic foams under dynamic conditions is discussed. It is shown that the destabilizing action of the surfactant vapors is a further indication that surface elasticity forces are the main factor determining stability of wet, dynamic foams.     

Sol-Gel Synthesis of Humidity-Sensitive P2O5-SiO2 Amorphous Films

The sol-gel synthesis of silicophosphate gels using phosphoryl chloride and tetraethoxysilane as molecular precursors is reported and discussed. Gel-derived glasses and films having the molar compositions 10P₂O₅ · 90SiO₂ and 30P₂O₅ · 70SiO₂ have been obtained. The structure of the dried gels as well as the structural modifications that occurs during the transformations in gel-derived glasses are analyzed by Fourier transform infrared spectroscopy (FTIR). It has been found that the evidence of the P—O—Si linkages begins to appear only on the FTIR spectra of the bulk gels heat treated up to 400°C while they are well resolved on the FTIR spectra of the bulk gel samples heated up to 1000°C indicating that at this temperature the transformation in the corresponding gel-derived glasses occurs. The humidity sensitive properties of the gel-films have been evaluated by electrochemical impedance spectroscopy (EIS). The phosphorous content as well as the temperature of the heat treatments strongly affect the sensitivity to RH of the gel-derived films.     

薄层色谱-紫外可见分光光度法测定食品中的苏丹红Ⅰ号

建立了测定食品中苏丹红Ⅰ号新方法:薄层色谱-紫外可见分光光度法.方法的线性回归方程为:A=0.00583 0.15105ρ,在0.50～10.0 μg/mL之间苏丹红Ⅰ号的浓度与吸光度之间呈线性关系,相关系数R=0.9992,检出限为0.05 μg/mL.测定结果与国家标准HPLC法对照,令人满意.可用于食品中苏丹红Ⅰ号的测定.     

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al₂O₃/TiO₂/HfO₂ dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al₂O₃-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm⁻², desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10⁻¹⁰ A·cm⁻², and quadratic voltage coefficient of 303.6 ppm·V⁻². Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm⁻² and 0.25 fF·µm⁻². Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.     

Cu3N薄膜及其研究现状

Cu3N薄膜是近10年来研究的热点材料之一.Cu3N是立方反ReO3结构,理想立方反ReO3结构的一个晶胞中Cu原子占据立方边的中心位置而N原子占据立方晶胞的八个顶点,此结构的体心位置有一较大间隙,Cu原子以及其他原子如Pd、碱金属原子等很有可能进入此位置导致Cu3N的电学性能、光学性能等发生很大的变化,这使得该材料具有很大的潜在应用价值.Cu3N的晶格常数为0.3815nm,密度5.84g/cm3,分子量204.63,颜色呈黑绿色或红褐色,空间点群Pm3m.Cu3N薄膜在室温下相当稳定并且热分解温度较低(300℃左右),热分解前后薄膜的光学反射率有较大差别,这可使Cu3N薄膜用作一次性光记录材料.此外,Cu3N薄膜还可用作在Si片上沉积金属Cu线的缓冲层、低磁阻隧道结的阻挡层、自组装材料的模板等.     

工作气压对磁控溅射ITO薄膜性能的影响

工作气压在ITO薄膜的制备过程中是一个重要的工艺参数,直接决定着薄膜的性能.本文利用射频磁控溅射方法,采用氧化铟锡陶瓷靶材,在衬底温度为175℃,工作气压范围为0.45～1.0 Pa条件下,制备了氧化铟锡透明导电薄膜.研究了工作气压对其微观结构、表面形貌和光电特性的影响.在衬底温度为175℃、纯氩气中制备的氧化铟锡薄膜电阻率为3.04 ×10-4 Ω·cm、可见光波段(400～800 nm)透过率为91.9;,适合用作异质结太阳电池的前电极和减反射膜.     

缓冲层ZnPc对有机电致发光器件特性的影响

本文研究了酞菁锌(ZnPc)薄膜的表面形貌及ZnPc薄膜作为缓冲层对有机电致发光器件(OLEDs)光电特性的影响.对比两组样品的AFM图像,ZnPc薄膜相比于ITO薄膜,其表面的岛面积较大,薄膜表面更连续平整,基本上覆盖了ITO膜表面针孔,减少了表面的缺陷.另外,ZnPc薄膜的岛分布均匀有序.使用ZnPc作为缓冲层的器件性能明显好于未使用ZnPc修饰的器件,在7.42V的驱动电压下的最大发光亮度达到1.428kcd/m2,在4.3V电压驱动下时,最大光功率效率为1.411m/W;而未使用缓冲层的器件在8V的驱动电压下达到最大发光亮度达到1.212kcd/m2,在5.5V电压驱动下时,最大光功率效率为0.931m/W.     

用化学溶液方法在Ni-5at%W基底上制备La2Zr2O7过渡层的研究

La2Zr2O7(LZO)过渡层以其独特的物理化学性质越来越受到人们的关注。本文以乙酰丙酮镧和乙酰丙酮锆为前驱盐,丙酸为溶剂配置前驱液,用化学溶液方法(CSD)在具有立方织构的Ni-5at%W基底上制备了LZO过渡层薄膜。研究了前驱液成分、性质以及退火温度对LZO成相以及取向的影响。用常规XRD和X射线四环衍射仪分析了LZO薄膜的相成分和织构。结果显示,在1050℃下退火可以获得强立方织构的LZO薄膜,其中(222)峰的Phi扫描半高宽值为8.95°;(400)峰的Chi扫描半高宽值为6.8°。用高分辨扫描电子显微镜(FE-SEM)观察到LZO薄膜表面均匀致密,没有裂纹和空洞。     

（Ti,Al）N薄膜光学性能的研究

研究了（Ｔｉ，Ａｌ）薄膜的光学特性，对其反射和透射光谱作了仔细分析。运用Ｈａｄｌｅｙ方程，算出一定成分（Ｔｉ，Ａｌ）Ｎ膜的折射率ｎ，消光系数ｋ随波长的变化关系。又根据透射曲线，计算出了（Ｔｉ，Ａｌ）Ｎ膜的光隙能。     

电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜,包括单层氧化物薄膜和增透膜,然后采取一系列测试手段,如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术,来分析和研究不同的工艺对这些薄膜性能的不同影响,以判断合理的沉积工艺。