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91.
The effects of temperature and duration of melting on the rate of isothermal crystallization of isotactic polypropylene were investigated by differential scanning calorimetry (DSC). Crystallization rates were found to decrease with increasing melt temperature and melting time. The results were discussed in the framework of the theoretical model of transient isothermal crystallization developed by the present authors [1]. The results suggest gradual destruction of predetermined nuclei with activation energyE a=89±7 kJ/mole as a main mechanism of the observed effects.This work and Part I of this research [1] have been supported in part by Research Grant Number PB 1291/52/93/04 from State Committee for Scientific Research (KBN), Poland, and by 40% MURST founds, Italy.  相似文献   
92.
Heating (100) silicon at high temperature (say, higher than 850 °C) in H2, cooling to 670–700 °C in the same ambient, and quenching to room temperature in N2 results in environmentally robust, terraced 1 × 1 (100) SiH2. Evidence for this conclusion is based on angle‐resolved x‐ray photoelectron spectroscopy, atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, and reflection high‐energy electron diffraction. Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
93.
Crystalline specimens of homochiral and racemic glycidyl p-toluenesulfonate were studied by IR spectroscopy, differential scanning calorimetry, and X-ray diffraction analysis. The melting phase diagram of glycidyl p-toluenesulfonate was constructed. The stacking effect in the crystals of the racemic sulfonate is responsible for a more dense molecular packing, with the result that a heterochiral type of crystallization becomes more favorable.  相似文献   
94.
Results of emanation thermal analysis (ETA) characterizing microstructure changes of SiC based materials during heat treatment in argon are demonstrated. This method made it possible to reveal fine changes of the texture of SiC nano-sized powders, SiC micro-sized powders and SiC whiskers under in situconditions of the heating. ETA curves can serve as fingerprints of the respective samples.This revised version was published online in November 2005 with corrections to the Cover Date.  相似文献   
95.
The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions.  相似文献   
96.
A series of ferrocene‐containing liquid‐crystalline polyphosphonates with an even number of methylene groups are reported. All the polymers gave birefringent melts. The mesophase was identified as transparent with an increase in the spacer. The effects of pendant substitution and the spacer were studied with thermogravimetric analysis and differential scanning calorimetry. The effects of the phosphonate group in the spacer and the ferrocene ester group in the mesogen were examined. The presence of a steplike mesogenic structure and a pendant phenyl group in the spacer led to reductions in the glass‐transition and melting temperatures. The ferrocene moiety in the mesogen might be one of the reasons for the increased thermal stability and decreased liquid crystallinity. An energy‐minimized structure for the mesogenic and spacer segments was created with computer‐modeling programs, and it suggested the reason for the reductions in the glass‐transition and melting temperatures. © 2002 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 40: 2256–2263, 2002  相似文献   
97.
In this paper we try to establish a link between the microclimate in the wasp nest and the structure and thermal stability of vespid silk. We suggest that there are at least two types of water that is absorbed by the silk of Oriental hornets, namely, surface water and intrinsic structural water. The release of both types of water was found to be reversible. The enthalpy values of the endothermic peaks associated with the release of water from different silk samples do not differ substantially and are in the range of 106 to 130 J g-1 for the Vespa orientalis male larvae silk (sample #1), Paravespula germanica (yellowjacket) worker larvae silk (#3) and Vespa orientalis nest envelope(#4). For the Vespa orientalis worker larvae silk (sample #2), however, it is twice as large (228 J g-1). This is in agreement with the increased total amount of absorbed water. The silk studied has a fibrilar structure with interconnecting surfaces overlying entire regions. It is assumed that the initial water loss stems from water evaporation from the coat of the fibers - a daily occurrence in the hornets' nest. Heating to above 70°C may result in structural changes in the silk core. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
98.
DSC, TG and quadrupole mass spectrometer data concerning methylquinuclidinium iodide (MeQ1), dried precursor gel, and crystalline levyne-type zeolite are discussed together with the thermal degradation of MeQ1 mixed with single inorganic components of the gel. It is shown that MeQ+ions play a role in the organization of the gel structure. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
99.
Multi-temperature thermal plasmas have often to be considered to account for the nonequilibrium effects. Recently André et al. have developed the calculation of concentrations in a multi-temperature plasma by artificially separating the partition functions into a product by assuming that the excitation energies are those of the lower levels (electronic, vibration, and rotation). However, at equilibrium, differences, increasing with temperature, can be observed between partition functions calculated rigorously and with their method. This paper presents a modified method where it has been assumed that the preponderant rotational energy is that of the vibrational level v=0 of the ground electronic state and the preponderant vibrational energy is that of the ground electronic state. The internal partition function can then be expressed as a product of series expressions. At equilibrium for N 2 and N 2 + partition functions the values calculated with our method differ by less than 0.1% from those calculated rigorously. The calculation has been limited to three temperatures: heavy species Th , electrons Te , and vibrational T v temperatures. The plasma composition has been calculated by minimizing the Gibbs free enthalpy with the steepest descent numerical technique. The nonequilibrium properties have been calculated using the method of Devoto, modified by Bonnefoi and Aubreton. The ratio =Te/Th was varied between 1 and 2 as well as the ratio v =T v /T h for a nitrogen plasma. At equilibrium the corresponding equilibrium transport properties of Ar and N 2 are in good agreement with those of Devoto and Murphy except for T>10,000 K where we used a different interaction potential for N–N + . The effects of v and e on thermodynamic and transport properties of N 2 are then discussed.  相似文献   
100.
Abstract

On the perspective to develop CuO–TiO2 MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25?keV Ar?+?ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400?°C for 24?h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu–Ti–O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.  相似文献   
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