类锂离子与软X射线激光研究有关的跃迁波长和振子强度

本文用多组态HXR自洽场方法和优化以Slater径向积分法相结计算了类锂离子(Z=13～17,19)1s~2nl~2LJ(2≤n≤5,0≤l≤4)能级之间的跃迁波长和振子强度,并和实验进行了比较。就软X射线激光跃迁4f—3d而言,本文计算的波长值比其它文献的计算值更接近于观测值。     

铜到钼的类钠离子能级结构及软X射线光谱理论计算

本文采用Hartree-Fock自洽场方法,从理论上计算了铜到钼的类钠离子1s~22s~22p~6nl(n=3～6,l=O～5)各能级能量。给出了有可能实现软X射线激光的跃迁(5g—4f,5f—4d,6g—4f,6f—4d)的光谱性质:跃迁波长、振子强度,并和实验值进行了比较,跃迁波长的相对误差不超过千分之二。从计算结果可知,Se的6f—4d跃迁,Br的6g—4f跃迁,Zr的5f—4l跃迁,Nb的5g—4f跃迁都已进入水窗波段。     

可溶性离子对煅烧烟气脱硫石膏水化的影响

本文主要研究了不同水溶性离子对煅烧烟气脱硫石膏水化过程,也就是对大块煅烧石膏向石膏转化的相变过程的影响. 研究表明,在煅烧石膏向石膏转化的相变过程中,所有的阳离子都能加速煅烧石膏的水化作用,其中Ca²⁺的加速效应最弱. 对于最终沉淀得到的晶体,除了钠离子外,晶体尺寸不受不同种类盐的影响. 而在钠离子中,可以观察到长度大于130 μm的巨型结晶. 本研究阐明了不同离子对煅烧石膏水化的影响,为原始的烟气脱硫石膏在实际应用前的预处理提供了充分的指导.     

A novel scheme to acquire enhanced up-conversion emissions of Ho3+ and Yb3+ co-doped Sc2O3

A detailed investigation about the effect of Sc₂O₃: 1 mol%Ho³⁺/5 mol%Yb³⁺ co-doped with Ce⁴⁺ ions prepared by sol-gel methods was performed systematically. Under the excitation of 980 nm laser diode, both green emission (553 nm, ⁵F₄/⁵S₂→⁵I₈) and red emission (672 nm, ⁵F₅→⁵I₈) were both observed in the emission spectra of the samples, which were found to be two-photon process and sensitized by Yb³⁺ ions. With the increasing of Ce⁴⁺ ions, the up-conversion green emission intensity are increased by 6.52, 8.69, 10.85, 13.92 and 16.66 fold, corresponding to the Ce⁴⁺ ions concentrations from 5 mol% to 13 mol%, respectively. The number of photons are necessary to populate the upper emitting state decreases to 2 and the infrared absorption coefficient is reduced, when the Ce⁴⁺ ions concentration increase to 13 mol%. Ce⁴⁺ ions play an important role in tailoring the local crystal field around Ho³⁺ ions, lowering the highest phonon cut-off energy of matrix and reducing the infrared absorption coefficient, thus hindering the non-radiative processes, which contribute to the increased emission intensity. The excellent enhancement makes it a promising multifunctional optical luminescence material.     

Optimal spectral phase control of femtosecond laser-induced up-conversion luminescence in Sm3+:NaYF4 glass

The spectral phase of the femtosecond laser field is an important parameter that affects the up-conversion(UC)luminescence efficiency of dopant lanthanide ions.In this work,we report an experi-mental study on controlling the UC lmiiinescence efficiency in Sm^3+:NaYF4 glass by 800-nm femtosec-ond laser pulse shaping using spectral phase modulation.The optimal phase control strategy efficiently enhances or suppresses the UC luminescence intensity.Based on the laser-power dependence of the UC luminescence intensity and its comparison with the luminescence spectrum under direct 266-nm fem-tosecond lciser irradiation,we propose herein an excitation model combining non-resonant two-photon absorption with resonance-media ted three-photon absorption to explain the experimental observations.     

He2 and HeH molecular ions in a strong magnetic field: The Lagrange-mesh approach

Accurate calculations for the ground state of the molecular ions He³⁺₂ and HeH²⁺ placed in a strong magnetic field B?10² a.u.$B?{10}^2\text{a.u.}$ (≈2.35×10¹¹ G$\approx 2.35\times {10}^{11}\text{G}$) using the Lagrange-mesh method are presented. The Born–Oppenheimer approximation of zero order (infinitely massive centers) and the parallel configuration (molecular axis parallel to the magnetic field) are considered. Total energies are found with 9–10 s.d. The obtained results show that the molecular ions He³⁺₂ and HeH²⁺ exist at B>100 a.u.$B>100\text{a.u.}$ and B>1000 a.u.$B>1000\text{a.u.}$, respectively, as predicted in Turbiner and López Vieyra (2007) [1] while a saddle point in the potential curve appears for the first time at B∼80 a.u.$B\sim 80\text{a.u.}$ and B∼740 a.u.$B\sim 740\text{a.u.}$, respectively.     

紫外差光谱测定Gd(Ⅲ), Yb(Ⅲ)与HBED配合物的条件稳定常数

在0.01 mol·L-1 N-2-羟乙基哌嗪-N'-2-乙磺酸(Hepes), pH 7.4, 室温条件下, 应用紫外差光谱滴定观察了Gd(Ⅲ), Yb(Ⅲ)与N, N'-二(2-羟苄基)乙二胺-N, N'-二乙酸(HBED)的结合. 结果表明 Gd(Ⅲ), Yb(Ⅲ)与HBED均形成1∶1的配合物, 其紫外差光谱均于237和291 nm处出现吸收峰, 在237 nm处配合物Gd-HBED与Yb-HBED的摩尔吸光系数分别为 ΔεGd=(22.52±0.20)×103 cm-1·mol-1·L, ΔεYb=(27.15±0.11)×103 cm-1·mol-1·L; 配合物Gd-HBED与Yb-HBED的条件稳定常数分别为 lgKGd-HBED=13.56±0.28, lgKYb-HBED=16.06±0.03, 符合线性自由能关系.     

Measurement of lattice damage caused by ion-implantation doping of semiconductors†

Two new techniques have been used to measure the lattice damage produced in gallium arsenide by the implantation of 60 keV cadmium ions. In one of these methods, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600Å. The decrease in reflectivity resulting from ion- implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed in the scanning electron microscope as a function of the angle of incidence of the electron beam on a single crystal surface. The degradation of these ‘Coates-Kikuchi’ patterns resulting from ion implantation was used to obtain a quantitative measure of the lattice damage caused by the implantation process. The results of measurements made by both of the methods described have been compared with each other, and with data obtained by the more established method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.     

Kinetic energy oscillations in annular regions of ultracold neutral plasmas

A study of ion equilibration in annular regions of ultracold strontium plasmas is reported. Plasmas are formed by photoionizing laser-cooled atoms with a pulsed dye laser. The experimental probe is spatially-resolved absorption spectroscopy using the ²S_1/2-²P_1/2 transition of the Sr⁺ ion. The kinetic energy of the ions is calculated from the Doppler broadening of the spectrum, and it displays clear oscillations during the first microsecond after plasma formation. The oscillations, which are a characteristic of strong coulomb coupling, are fit with a simple phenomenological model incorporating damping and density variation in the plasma.     

Photoluminescence properties of SHI induced F2 and F3 color centers in nano-granular LiF thin films

Photoluminescence (PL) properties of swift heavy ions-induced F₂ and F₃⁺ color centers in nano-granular lithium fluoride (LiF) thin film were studied. LiF films were deposited on glass and silica substrates and irradiated with various ion species (Ag, Ni and Au) at different irradiation temperatures. The role of ion species, their fluence and the irradiation temperature on the PL intensity of color centers induced in LiF thin films is discussed.