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21.
E. V. Voronina E. P. Yelsukov A. V. Korolyov A. E. Yelsukova 《Hyperfine Interactions》2006,168(1-3):1079-1083
The experimental data from Mössbauer spectroscopy and magnetic measurements are presented as functions of the temperature and external magnetic field for a B2-type ordered Fe 66 Al 34 alloy. 相似文献
22.
H. Kuramochi J. Okabayashi F. Takano M. Mizuguchi T. Manago H. Akinaga 《Surface science》2004,550(1-3):192-198
Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(
1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs. 相似文献
23.
We study a GI/M/c type queueing system with vacations in which all servers take vacations together when the system becomes empty. These servers keep taking synchronous vacations until they find waiting customers in the system at a vacation completion instant.The vacation time is a phase-type (PH) distributed random variable. Using embedded Markov chain modeling and the matrix geometric solution methods, we obtain explicit expressions for the stationary probability distributions of the queue length at arrivals and the waiting time. To compare the vacation model with the classical GI/M/c queue without vacations, we prove conditional stochastic decomposition properties for the queue length and the waiting time when all servers are busy. Our model is a generalization of several previous studies. 相似文献
24.
The behavior of zirconium atoms at the W(100) surface associated with oxygen adsorption at different sample temperatures has been studied by Auger electron spectroscopy (AES), ion scattering spectroscopy (ISS), and the relative change of the work function (Δф) measured by the onset of the secondary electron energy distribution. The results have revealed: (i) adsorption of zirconium onto the W(100) surface followed by the elevation of the sample temperature up to 1710 K in an oxygen partial pressure of 2.7 × 10−4 induces complete diffusion of zirconium atoms into the W(100) substrate; (ii) further exposure of oxygen induces co-existence of oxygen and tungsten on the surface at 1710 K, resulting in a work function of 4.37 eV; (iii) keeping the sample temperature at 1710 K, simple evacuation of the system has resulted in surface segregation of zirconium atoms to the surface to form a zirconium atomic layer on the top-most surface, reducing the work function to 2.7 eV. The results have revealed that this specific behavior of zirconium atoms at high temperature assures, with very good reproducibility, the highly stable performance and long service life of Zr---O/W(100)-emitters in practical use, even in a low vacuum of 10−6 Pa. 相似文献
25.
26.
A room temperature method for the encapsulation of pyrene in SiO2 nanoparticles is described. The relation between alkoxysilane surfactant chain length, reactant molar ratios and the uptake of dye, sample morphology, photophysical properties, and the ability of the silicate matrix to protect the encapsulated dye was examined. The synthesis can easily be adapted for the encapsulation of other hydrophobic and thermolabile substances, and used in the development of nanostructured optically active coatings, films and monoliths. 相似文献
27.
T.R. Saitoh N. Hashimoto G. Sletten R.A. Bark S. Törmänen M. Bergström K. Furuno K. Furutaka G.B. Hagemann T. Hayakawa T. Komatsubara A. Maj S. Mitarai M. Oshima J. Sampson T. Shizuma P.G. Varmette 《The European Physical Journal A - Hadrons and Nuclei》1998,3(3):197-199
High-spin states in 181Ta have been studied via the 176Yb(11B,α2n) reaction at 52 MeV using the PEX array and at 57 MeV using the NORDBALL array, with α-particle detection. The previously
known, Kπ=(7/2)+ ground state band and Kπ=(9/2)− band have been extended to spins (29/2)+ and (31/2)−, respectively. Two new one-quasiparticle bands, the Kπ=(5/2)+ band built on the known (5/2)+ isomer and a Kπ=((1/2)−) band have been observed. Two other rotational bands with three-quasiparticle structure, Kπ=(15/2)− and ((19/2)+ with π(7/2)[404]ν2(1/2)[510](9/2)[624] and π(9/2)[514]ν2(1/2)[510](9/2)[624] configurations, respectively, have been newly observed. The half-life of the Kπ=((19/2)+) bandhead which decays to the head of the (15/2)− band has been measured to be 140(36) ns. However, transitions from the ((19/2)+) state to the (15/2)− band have not been observed.
Received: 26 August 1998 相似文献
28.
R. Cressely V. Hartmann 《The European Physical Journal B - Condensed Matter and Complex Systems》1998,6(1):57-62
In this experimental work we carefully investigate the rheological behaviour and in particular the shear thickening exhibited
by aqueous micellar solutions of CTAB with NaSal as added counterion. We are particularly interested in the evolution of the
critical shear rate (at which shear thickening occurs) versus
C
D
, the surfactant concentration. We show that , at fixed salt concentration C
S
, increases with C
D
following a power law evolution with a positive exponent of + 5.8. On the other hand we show that if the ratio C
D
/ C
S
is fixed, decreases with C
D
with a negative exponent of -2.0. Nevertheless investigations of the zero shear viscosity indicate that in all situations (implying variation of the surfactant concentration C
D
, or the salt concentration C
S
or the temperature) is a decreasing function of the length of the micelles. All these evolutions are compatible with a gelation mechanism which
could possibly be associated with entanglement effects of large interacting flowing structures.
Received: 3 March 1998 / Revised: 16 June 1998 / Accepted: 3 July 1998 相似文献
29.
C. Andreoiu D. Rudolph I. Ragnarsson C. Fahlander R.A.E. Austin M.P. Carpenter R.M. Clark J. Ekman R.V.F. Janssens T.L. Khoo F.G. Kondev T. Lauritsen T. Rodinger D.G. Sarantites D. Seweryniak T. Steinhardt C.E. Svensson O. Thelen J.C. Waddington 《The European Physical Journal A - Hadrons and Nuclei》2002,14(3):317-348
High-spin states in 59Cu were populated using the fusion-evaporation reaction 28Si + 40Ca at a beam energy of 122 MeV. The Gammasphere Ge-detector array in conjunction with the 4π charged-particle detector array
Microball allowed for the detection of γ-rays in coincidence with evaporated light particles. The resulting extensive high-spin
decay scheme of 59Cu is presented, which comprises more than 320 γ-ray transitions connecting about 150 excited states. Their spins and parities
have been assigned via directional correlations of γ-rays emitted from oriented states. Average quadrupole moments of rotational
bands have been determined from the analysis of residual Doppler shifts. Shell model calculations in the fp shell are invoked to study some of the low-spin states, while the experimental characteristics of the rotational bands are
analyzed in the configuration-dependent cranked Nilsson-Strutinsky (CNS) approach.
Received: 15 February 2002 / Accepted: 23 April 2002 相似文献
30.
In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I-V and photoluminescence surface state spectroscopy (PLS3) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces.The elaborated structures were characterised by I-V analysis. The saturation current IS, the ideality factor n, the barrier height ΦBn and the serial resistance RS are determined.The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS3 technique), the value of the interface state density NSS(E) close to the mid-gap was estimated to be in the range of 2-4 × 1011 eV−1 cm−2, indicating a good electronic quality of the obtained interfaces.Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed. 相似文献