Ar-Broadening of isotropic Raman lines in the ν2 band of acetylene

Using a high resolution Raman spectrometer, we have measured Ar-broadening coefficients in the ν₂Q branch of C₂H₂ for 22 lines at 295 K, 20 lines at 174 K, and 16 lines at 134 K. These lines with J values ranging from 1 to 23 are located in the spectral range 1970.9-1974.3 cm⁻¹. The collisional widths are obtained by fitting each spectral line with a Rautian profile. The resulting broadening coefficients are compared with theoretical values arising from close coupling and coupled states calculations. A satisfactory agreement is obtained at room as well as at low temperatures, especially for odd J lines. By comparing broadening coefficients at 295, 174, and 134 K from a simple power law, the temperature dependence of these broadenings has been determined both experimentally, and theoretically.     

Millimeter and submillimeter wave spectroscopic investigations into the rotation-tunneling spectrum of gGg ethylene glycol, HOCH2CH2OH

The rotation-tunneling spectrum of the second most stable gGg^′ conformer of ethylene glycol (1,2-ethanediol) in its ground vibrational state has been studied in selected regions between 77 and 579 GHz. Compared to the study of the more stable aGg^′ conformer, a much larger frequency range was studied, resulting in a much extended frequency list covering similar quantum numbers, J?55 and K_a?19. While the input data were reproduced within experimental uncertainties up to moderately high values of J and K_a larger residuals remain at higher quantum numbers. The severe mixing of the states caused by the Coriolis interaction between the two tunneling substates is suggested to provide a considerable part of the explanation. In addition, a Coriolis interaction of the gGg^′ ground vibrational state with an excited state of the aGg^′ conformer may also contribute. Relative intensities of closely spaced lines have been investigated to determine the signs of the Coriolis constants between the two tunneling substates relative to the dipole moment components and to estimate the magnitudes of the dipole moment components and the energy difference between the gGg^′ and the aGg^′ conformers. Results of ab initio calculations on the total dipole moment and the vibrational spectrum were needed for these estimates. The current analysis is limited to transitions with quantum numbers J?40 and K_a?6 plus those having J?22 and K_a?17 which could be reproduced within experimental uncertainties. The results are aimed at aiding radioastronomers to search for gGg^′ ethylene glycol in comets and in interstellar space.     

利用拉曼型的Jaynes-Cummings模型传送两比特的未知原子态

实现量子态的隐形传送、尤其是多比特量子态的隐形传送在量子信息领域中有非常重要的作用，提出了一种隐形传送两比特未知原子态的方案，在此方案中，用两个两粒子纠缠态代替一个三粒子纠缠态作为量子信道，而且此方案可推广到隐形传送N比特的未知原子态。     

Wave function mapping of self-assembled quantum dots by capacitance spectroscopy

We use frequency-dependent capacitance–voltage spectroscopy to study the dynamic charging of self-assembled InAs quantum dots. With increasing frequency, the AC charging becomes suppressed, beginning with the low-energy states. By applying an in-plane magnetic field, we generate an additional magnetic confinement that alters the tunneling barrier and hence the charging dynamics. In traveling through the potential barrier, the electrons acquire an additional momentum k₀, proportional to the magnetic field B. As the tunneling is enhanced, when k₀ matches the maximum of the electronic wave function Ψ (in momentum representation), we are able to map out the shape of Ψ by varying B.     

用改进嵌入原子法计算Cu晶体的表面能

用改进嵌入原子法(MEAM)计算了Cu晶体12个晶面的表面能.结果表明，密排面(111)的表面能最小.其他晶面的表面能随其晶面与(111)晶面夹角的增加而增加，据此可以粗略地估计各晶面表面能的相对大小.给出的几何结构因子的确定方法及结果可以直接用于计算其他面心立方晶体的表面能及其他特性.在Cu,Ag等面心立方薄膜中出现(111)择优取向或织构的机理是表面能的最小化. 关键词： 改进嵌入原子法 铜 表面能 计算     

Microstructure and high-temperature wear resistance of a laser surface alloyed γ-TiAl with carbon

TiC reinforced composite coating on γ-TiAl alloy was successfully fabricated by laser surface alloying with carbon. The fine TiC reinforcing phase had a gradient distribution in the coating, and its growth morphology of TiC in laser surface alloyed coating was in unique faceted platelet-like. The composite coating exhibited high hardness and excellent high-temperature sliding wear resistance.     

向列液晶表面弹性能K13项的物理效应及检验方法

通过解析推导和数值计算的方法，得到了平衡态指向矢满足的微分方程和边界条件.研究了表面弹性能K13项对磁场作用下的弱锚定向列液晶盒Fréedericksz转变性质的影响.结果表明，表面弹性能K13项的存在对液晶系统的自由能有很大的影响，从而改变转变的性质，诱导液晶盒在阈值点发生一级Fréedericksz转变.给出了发生一级转变的物理条件，它除了与液晶的结构和材料有关外，还依赖于液晶表面弹性能K13项，同时给出了由此判断K13项是否存在的检验方法. 关键词： 表面弹性能K13项 弱锚定 Fréedericksz转变     

Compact Kähler Surfaces with Trivial Canonical Bundle

The classical conjectures of Weil on K3 surfaces – that the set of suchsurfaces is connected; that a version of the Torelli theorem holds; thateach such surface is Kähler; and that the period map issurjective – are reconsidered in the light of a generalisation of theNakai–Moishezon criterion, and short proofs of all the conjectures aregiven. Most of the proofs apply equally or with minor variation tocomplex 2-tori, the only other compact Kähler surfaces with trivialcanonical bundle.     

Si微电阻桥温度分布与热传导特性的显微Raman光谱研究

采用显微Raman光谱方法对红外目标模拟器中重掺杂Si微电阻桥单元的热传导特性进行研究，根据Si桥的实际特性建立相应的Raman散射模型，通过测量Raman峰位的移动得到高功率激光辐照下测量点的温度.对Si桥桥面分别进行了沿某些特殊线段的逐点线扫描和覆盖全部桥面的面扫描，得到各点的温升及其分布.用基于有限元分析的软件结合Si桥结构参数对各测量点的温升进行了模拟计算，其结果在热导分布的基本趋势上与实验相一致.实验细致地揭示了热导分布的局域起伏，反映出实际器件的不均匀性，为改进器件设计、优化器件性能提供了实验依据. 关键词： Raman光谱 Si桥 温度分布 热导     

A theoretical analysis of the TiO2/Sn doped (1 1 0) surface properties

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO₂/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO₂ is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sn, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices.