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161.
建立了室温下使用多次透射反射红外光谱法(MTR-IR)测量单晶硅中间隙氧和代位碳含量的新红外光谱吸收方法,在理论和实验上证明了MTR-IR优于常规使用的单次垂直透射红外(IR)吸收测量方法。与IR法相比较,MTR-IR法的优点为:(1)间隙氧在1107 cm-1处和代位碳在605 cm-1处的吸收峰与MTR-IR法中红外光透过硅片的的次数N(6~12)成线性增加的正比例关系,因此单晶硅中间隙氧和代位碳含量的检测限至少比IR法低一个数量级;(2)MTR-IR法测量薄硅片如0.2 mm的厚度时产生的干涉条纹强度是单次垂直透射红外吸收法(IR)的1/23、是单次Brewster角透射红外吸收法的1/11;(3)单次垂直透射红外吸收法(IR)1次只测量样品上的1个点,MTR-IR法则在更长的样品上1次测量多个样品点,每次测量更具有代表性。理论计算和实验结果都证实了MTR-IR吸收法测量晶体硅中间隙氧和代位碳杂质含量的高灵敏度、可靠性和重复性。 相似文献
162.
Yunqian Dai Huan Long Xiaotian Wang Yueming Wang Qing Gu Wei Jiang Youcheng Wang Cancan Li Tingying Helen Zeng Yueming Sun Jie Zeng 《Particle & Particle Systems Characterization》2014,31(5):597-604
This paper reports a facile fabrication of N‐doped graphene quantum dots (N‐GQDs) showing controllable chemical properties through a hydrothermal treatment. The N‐GQDs have a uniform size of 3.06 ± 0.78 nm and prefer the equilibrium shapes of circle and ellipse due to the minimization of edge free energy. The N/C atomic ratio in N‐GQDs can be precisely tailored in a range from 8.3 at% to 15.8 at% by simply controlling the concentration of N source (ammonium hydroxide). One order of magnitude quantum yield of 34.5% is achieved by N‐GQDs, compared with the N‐free GQDs, as the substitutional N has an essential role in more effective radiative emission. Excessive N dopants in N‐GQDs can lead to photoluminescence quenching, through nonradiative transition back to the ground state. The N‐GQDs are further found to be suitable as photocurrent conversion materials due to benign energy matching with anatase nanofibers, the ultrafast electron injection at their interface, and efficient electron transfer. This work provides an efficient and inspiring approach to engineering both chemical components and physical properties of N‐GQDs, and will therefore promote their basic research and applications in energy conversion. 相似文献
163.
Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys 下载免费PDF全文
In order to investigate the influence of compressive strain on indium incorporation in In Al N and In Ga N ternary nitrides,In Al N/Ga N heterostructures and In Ga N films were grown by metal–organic chemical vapor deposition.For the heterostructures,different compressive strains are produced by Ga N buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode;while for the In Ga N films,compressive strains are changed by employing Al Ga N templates with different aluminum compositions.By various characterization methods,we find that the compressive strain will hamper the indium incorporation in both In Al N and In Ga N.Furthermore,compressive strain is conducive to suppress the non-uniform distribution of indium in In Ga N ternary alloys. 相似文献
164.
165.
Shiro Funahashi Yuichi Michiue Takashi Takeda Rong‐Jun Xie Naoto Hirosaki 《Acta Crystallographica. Section C, Structural Chemistry》2014,70(5):452-454
A novel nitride, Sr2−yEuyB2−2xSi2+3xAl2−xN8+x (x≃ 0.12, y≃ 0.10) (distrontium europium diboron disilicon dialuminium octanitride), with the space group P2c, was synthesized from Sr3N2, EuN, Si3N4, AlN and BN under nitrogen gas pressure. The structure consists of a host framework with Sr/Eu atoms accommodated in the cavities. The host framework is constructed by the linkage of MN4 tetrahedra (M = Si, Al) and BN3 triangles, and contains substitutional disorder described by the alternative occupation of B2 or Si2N on the (0, 0, z) axis. The B2:Si2N ratio contained in an entire crystal is about 9:1. 相似文献
166.
Characterizations of B and N heteroatoms as substitutional doping on structure,stability, and aromaticity of novel heterofullerenes evolved from the smallest fullerene cage C20: a density functional theory perspective 下载免费PDF全文
Somayeh Soleimani Amiri Maryam Koohi Behrooz Mirza 《Journal of Physical Organic Chemistry》2016,29(10):514-522
The structural stabilities and electronic properties of C20 fullerene and some its incorporated boron and nitrogen derivatives are probed at B3LYP/AUG‐cc‐pVTZ level of theory. According to density functional theory results, the topology of inserted B or N heteroatoms in [20]‐fullerene perturbs strongly the stability, energy, geometry, charge, polarity, nucleus‐independent chemical shifts, aromaticity, and highest‐occupied molecular orbital and lowest‐unoccupied molecular orbital (HOMO–LUMO) gap of the resulting heterofullerenes. Vibrational frequency (υmin) calculations show that except N10C10, all other BbNnC20‐(b + n) heterofullerenes with b, and n = 0, 4, 5, 8, and 10 are true minima. The calculated band gaps (?EHOMO–LUMO) of B8C12, and N8C12 (2.86 eV), show them the most stable heterofullerenes against electronic excitations. While 10 B substituting in equatorial position increase the conductivity of B10C10 through decreasing its band gaps, 10 N doping in equatorial position enhance stability of N10C10 against electronic excitations via increasing its band gaps. High natural bond orbital and Mulliken charge transfer on the surfaces of B atoms, especially B5N5C10with five B–N bonds in the equatorial position, provokes further investigation on its possible application for hydrogen storage. Nucleus‐independent chemical shift values show that B5N5C10 is the most aromatic species. The calculated heat of atomization per carbon (ΔHat/C) of B8C12 shows it the most thermodynamic stable heterofullerenes of each. Copyright © 2016 John Wiley & Sons, Ltd. 相似文献
167.
Yu. E. Roginskaya T. L. Kulova A. M. Skundin M. A. Bruk E. N. Zhikharev V. A. Kal’nov V. B. Loginov 《Russian Journal of Electrochemistry》2008,44(11):1197-1203
The silicon-carbon composite films, with the silicon and carbon relative content from 39.5: 60.5 to 87: 13 and thickness 100–480 nm, are prepared by magnetron sputtering with layer-by-layer deposition of the components. The film structure is studied by using X-ray diffraction analysis and atomic-force microscopy. All studied films were found to be roentgen-amorphous. Despite the films were deposited in a layer-by-layer mode, they have granular structure, with the granules sized 10–80 nm. The lithium incorporation from LiClO4 solution in propylene carbonate-dimethoxyethane mixture is studied. All studied films reversibly incorporate lithium; thus, they can serve as the basis for negative electrodes of lithium-ion batteries. The initial capacity of the composite-film electrodes is 1.5 to 2.8 A h/g. As the films are submerged to cycling, the capacity decreases, mainly due to the films’ insufficiently strong adhesion to the substrate, which results in the film defoliation. The most cycling-resistant are the thinnest films containing no less than 30% carbon. The capacity of the best samples is as high as 1 A h/g after 200 cycles. 相似文献
168.
Prof. Dr. Abdolraouf Samadi‐Maybodi Seyed Naser Azizi S. Masoomeh Pourali Salma Ehsani Tilami 《无机化学与普通化学杂志》2012,638(1):214-219
Bismuth‐modified zeolite‐P (Bi‐ZP) was synthesized by hydrothermal methods during the phase transformation of analcime to zeolite‐P. The evolution of phase transformation of pure analcime to Bi‐ZP was investigated. The results showed that bismuth atoms were incorporated into the framework of the microporous zeolite‐P. The effect of various Bi/Al (0–3) and Si/Bi (1–5) mole ratios on the synthesis of bismuth modified zeolite were studied by X‐ray diffraction (XRD) technique and FT‐IR spectroscopy. Evolution of the growth process of Bi‐ZP spheres was carried out at different time intervals with XRD patterns and FE‐SEM images. The energy dispersive X‐ray (EDX) spectrum indicated the existence of bismuth atoms in the synthesized Bi‐ZP. Framework substitutions of bismuth were evidenced by a set of complementary characterizations such as diffusive reflectance UV/Vis (DRS) and Raman spectroscopy on the synthesized Bi‐ZP (Si/Bi = 1). 相似文献