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51.
采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体,利用Cr4+∶YAG晶体作为可饱和吸收元件,实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时,获得最高平均输出功率为4.58 W,脉冲宽度为84 ns,单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.  相似文献   
52.
In this paper we give a realization of some symmetric space G/K as a closed submanifold P of G. We also give several equivalent representations of the submanifold P. Some properties of the set gKP are also discussed, where gK is a coset space in G.  相似文献   
53.
We consider normal ≡ Gaussian seemingly unrelated regressions (SUR) with incomplete data (ID). Imposing a natural minimal set of conditional independence constraints, we find a restricted SUR/ID model whose likelihood function and parameter space factor into the product of the likelihood functions and the parameter spaces of standard complete data multivariate analysis of variance models. Hence, the restricted model has a unimodal likelihood and permits explicit likelihood inference. In the development of our methodology, we review and extend existing results for complete data SUR models and the multivariate ID problem.  相似文献   
54.
The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.  相似文献   
55.
以金属钇和异丙醇为原料,以HgCl2/I2为复合催化剂,通过对金属钇的机械加工以增加其比表面,并将异丙醇脱水使其含水量降低至0.05%,体系在82℃回流5h,经过滤、减压蒸馏,得到了白色海绵状异丙醇钇,其产率高达83%,合成时间比文献报道的缩短了19h,产率提高了8%。文章确定了催化剂的最佳用量为20gY加入60mg HgCl2/I2,研究了合成产率与HgCl2/I2催化剂和HgCl2催化剂的依赖关系及异丙醇中含水量对合成产率的影响,并对HgCl2/I2的催化作用机理进行了初步探讨。  相似文献   
56.
For X a metrizable space and (Y,ρ) a metric space, with Y pathwise connected, we compute the density of (C(X,(Y,ρ)),σ)—the space of all continuous functions from X to (Y,ρ), endowed with the supremum metric σ. Also, for (X,d) a metric space and (Y,‖⋅‖) a normed space, we compute the density of (UC((X,d),(Y,ρ)),σ) (the space of all uniformly continuous functions from (X,d) to (Y,ρ), where ρ is the metric induced on Y by ‖⋅‖). We also prove that the latter result extends only partially to the case where (Y,ρ) is an arbitrary pathwise connected metric space.To carry such an investigation out, the notions of generalized compact and generalized totally bounded metric space, introduced by the author and A. Barbati in a former paper, turn out to play a crucial rôle. Moreover, we show that the first-mentioned concept provides a precise characterization of those metrizable spaces which attain their extent.  相似文献   
57.
We introduce the notion of a partially selective ultrafilter and prove that (a) if G is an extremally disconnected topological group and p is a converging nonprincipal ultrafilter on G containing a countable discrete subset, then p is partially selective, and (b) the existence of a nonprincipal partially selective ultrafilter on a countable set implies the existence of a P-point in ω. Thus it is consistent with ZFC that there is no extremally disconnected topological group containing a countable discrete nonclosed subset.  相似文献   
58.
The central question of this paper is the one of finding the right analogue of the Commutant Lifting Theorem for the Bergman space La2. We also analyze the analogous problem for weighted Bergman spaces La2, − 1 < α < ∞.  相似文献   
59.
研究了拉曼放大器中放大的自发拉曼散射对拉曼开-关增益的影响,并提出了一种利用自发拉曼散射谱来调整拉曼放大器位曼开-关增益平坦的方法,实验采用4个波长为14xx nm的激光二极管作为抽运源,75km的G.652光纤作为传输介质,获得了C波段附近的光放大,同时对此给出了合理的理论解释。  相似文献   
60.
A simple simulation scheme that simultaneously describes the growth kinetics of SiO2 films at the nanometer scale and the SiOx/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.  相似文献   
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