多孔球层内核态沸腾过程特性的实验观察

本文以水为实验工质,对从底部加热多孔球层内核态沸腾过程进行可视化观察。通过高速图像采集系统;拍摄和观察了孔隙内汽泡的成长过程,在实验观察的基础上,对多孔球层内核态沸腾过程的一些基本特性进行了分析和讨论。     

Nuclear Resonant Scattering into the New Millennium

Hyperfine Interactions - The technique of nuclear resonant scattering has spread out in various fields during the previous years. Those fields, which have rapidly developed and attracted the...     

Magnetic properties of the Cr(0 0 1) surface studied by spin-polarized scanning tunneling spectroscopy

The magnetic properties of the Cr(0 0 1) surface have been studied by spin-polarized scanning tunneling spectroscopy (SP-STS). Spatially resolved mapping of the spectroscopic dI/dU signal at an energy close to the spin-polarized Cr(0 0 1) surface state allows the confirmation of the topological antiferromagnetic order of the Cr(0 0 1) surface. It is shown that the presence of screw dislocations leads to the formation of domain walls which exhibit a width of 120–170 nm. A long-period modulation of the SP-STS signal was not observed indicating that the bulk spin-density wave is modified at the surface due to symmetry breaking.     

Interaction between aromatic amine cations and nonpolar solvents: Infrared spectra of isomeric aniline -Ar n ( ) complexes

Infrared (IR) photodissociation spectra of the aniline⁺-Ar_n cations, An ⁺ - Ar _n (n = 1, 2), are analyzed in the vicinity of the N-H stretch fundamentals. The complexes are produced in an electron impact (EI) ion source which produces predominantly the most stable cluster isomers. Two isomers of An⁺-Ar are identified by their characteristic N-H stretch frequencies: the planar proton-bound global minimum, in which the Ar ligand forms a nearly linear H-bond to the amino group, and the less stable π-bound local minimum, in which the Ar atom is attached to the π-electron system of the aromatic ring. This result is the first unambiguous detection of the most stable H-bound An⁺-Ar dimer. All previous spectroscopic studies of An⁺-Ar employed resonance enhanced multiphoton ionization (REMPI) of neutral An-Ar and identified only the less stable π-bound cation due to restrictions arising from the Franck-Condon principle. The EI-IR spectrum of An⁺-Ar₂ shows that the most stable structure of this trimer features two equivalent H-bonds (C_2v symmetry). The interpretation of the experimental data is supported by quantum chemical calculations. The ab initio potential of An⁺-Ar calculated at the UMP2/6-311G(2df, 2pd) level features H-bound global minima ( D _e = 513 cm^-1) and π-bound local minima ( D _e = 454 cm^-1), with a barrier of V _b ≈ 140 cm^-1 for isomerization from the π-bound toward the H-bound minimum. Received 4 February 2002 Published online 13 September 2002     

Thermal conductance for single wall carbon nanotubes

We report a theoretical analysis of the phonon thermal conductance, κ(T), for single wall carbon nanotubes (SWCN). In a range of low temperatues up to 100 K, κ(T) of perfect SWCN is found to increase with temperature, approximately, in a parabolic fashion. This is qualitatively consistent with recent experimental measurements where the tube-tube interactions are negligibly weak. When the carbon-carbon bond length is slightly varied, κ(T) is found to be qualitatively unaltered which implies that the anharmonic effect does not change the qualitative behavior of κ(T). Received 12 June 2001     

MO analysis of macroscopic supercurrent flow in MgB 2

We present results from an extended magneto-optical (MO) analysis of two samples cut from high-density pellets of MgB₂. The first sample was studied in order to show that no matter how large the sample is and despite the bulk granularity, the material enters into a critical state in a crystal-like fashion. The second sample was chosen for the quantitative analysis. A numerical approach based on an inverted 2D Biot-Savart model was used to calculate the current paths across the homogeneous polycrystalline bulk, as well as in the vicinity and across some morphological defects. Local current densities in the homogeneous part were estimated as a function of the applied magnetic field at different temperatures, in three regimes: below full penetration, at full penetration and above full penetration, respectively. A hypothesis of interpretation of the apparent absence of magnetic granularity inside the polycrystalline microstructure is presented. It is related to a critical state likely reached by a network of strongly coupled Josephson junctions. Received 31 May 2001 and Received in final form 5 December 2001     

Study on Planar Whispering Gallery Dielectric Resonators. I. General Properties

Several basic properties of homogeneous planar Whispering Gallery dielectric resonators are investigated through a general approach. In particular the values for the minimum and maximum allowed radius, defined by irradiation and dielectric losses, respectively, are obtained in terms of the complex dielectric constant of the involved media. The same approach is employed in the analysis of the limit allowed frequencies of a fixed family of mode, leading to the definition of the ideal frequency band. The role of the transverse mode is then discussed, and the effective frequency band is introduced and determined both in simple disc and circular ring resonators. The extension of the effective band is limited at least by a factor 3, in terms of decades, in comparison to the extension of the ideal one; this limitation, due to the presence of transverse modes, can be overcome using suitable designed nonhomogeneous resonators, as discussed in a following companion paper.     

欧洲近海结构用钢研究计划的进展

欧洲近海结构用钢研究计划在第一阶段(1975—80年)关于海洋焊接结构在疲劳载荷下工作性能的研究基础上,于1981—87年继续进行了第二阶段的研究工作。参加国家有欧洲经济共同体6国及挪威、加拿大等。本文综合报道第二阶段研究情况与主要成果,内容包括:板厚对疲劳强度的影响,焊后改进技术与腐蚀疲劳,疲劳载荷及变幅疲劳试验,疲劳分析的断裂力学方法,某些管节点的应力分析等;并对研究计划的背景及今后研究工作的方向作了介绍。      

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)