The influence of implanted xenon on the sputtering yield of silicon

Following implantation labeling with either 200 or 270 keV Xe⁺ the sputtering yield of silicon bombarded with 20 keV Xe⁺ has been determined in situ by means of the backscattering technique (Y = 3.0 ± 0.3 (atoms/ion)). Yield enhancement by up to 60% was observed in cases where the implantation-induced xenon concentrations exceeded the saturation concentration during sputtering. The effect is attributed to (i) an increase in energy deposition at the surface introduced by pronounced xenon loading of the target and (ii) lowering of the surface binding energy. As a consequence the energy dependence of the xenon sputtering yield of silicon is expected to be strongly affected by the energy dependence of the xenon saturation concentration in silicon. Available experimental data support this idea.     

Spatial distribution of defects produced by boron ion implantation of silicon

A simple technique for the study of the spatial distribution of the damage produced by ion implantation of silicon has been developed. The damage depth distribution for 40 keV boron ions in silicon has been studied at irradiation doses from 7 × 10¹¹ to 3.9 × 10¹⁴ ions/cm² and the relative defect peak depth R _d/R _p = 0.85 determined. An increase of layer conductivity as the surface part of the implanted layer is removed has been revealed. This effect is caused by the presence of radiation defects in the surface region of the layer. The “electrical” cluster diameter is about 28 A and the overlapping cluster dose is close to 1 × 10¹³ ions/cm².     

4He-stopping power measurements by using ion implantation and backscattering techniques

Experimental results on changes in conductivity of N₂+ and Ar⁺ bombarded thin copper, aluminium and bismuth films are given along with the preliminary observations on photoconductivity of N₂+ bombarded Bi₂O₃ thin films. The performance of a low cost, medium resolution 200 keV ion implantation system, used in the above experiments is also discussed.     

Carrier removal by implanted IONS in GaAs

Abstract

A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions.     

Preparation and Characterization of Electroactive Anion‐Exchange Acrylic Polymer–Gold Composites

The characteristics and performance of an ionic polymer–metal composite (IPMC), prepared with an anion‐exchange acrylic copolymer, was examined. The acrylic copolymer was synthesized by the radical copolymerization of fluoroalkyl methacrylate and 2‐(dimethyl amino)ethyl methacrylate(AMA). Effects of the AMA repeating unit's content in the copolymer and effects of the anion type present on the actuation of the IPMC were observed. The optimal content of 19.4 wt% AMA in the IPMC copolymer yielded the best actuation. The actuation also improved according to the type of anion present in the composite, in the following order: Br^???4 ^?.     

Fluorescence resonance energy transfer between cerium ion(III) and levofloxacin in micellar solution and its analytical application to the determination of levofloxacin

Fluorescence resonance energy transfer between cerium ion(III) and levofloxacin is studied in a micellar solution of cetyltrimethyl ammonium bromide. A non-fluorescent 1:2 complex was formed between excited cerium ion(III) and ground state levofloxacin. The fluorescence of cerium ion(III) is quenched by levofloxacin with the quenching in accordance with the Stern–Volmer relation. The analytical relationship was established between the ratio of the fluorescence of levofloxacin present and absent cerium ion (III) and the concentration of levofloxacin, which helped to estimate the content of levofloxacin directly.     

Luminescence of Cs2PtF6

In the past five years, a number of d⁶ complexes have been found to exhibit luminescence when excited by ultraviolet light. Such emission has been assigned to d-d transitions localized on the metal ion, to charge-transfer transitions, and to ligand localized transitions^2,3. The specific kind of emission observed is thought to depend on which electronic level lies lowest in energy.     

Combined effects of high pressure and sodium hydrogen carbonate treatment on pork ham: improvement of texture and palatability

In this study, the combined effects of high pressure and sodium hydrogen carbonate (NaHCO₃) treatment on the physical and chemical properties, and palatability of pork ham, a tough and under-utilized meat, were investigated. Assessment of meat properties with heat treatment, after exposure to NaHCO₃ and high pressure treatment, revealed an increase in water content, and decreased weight reduction and rupture stress. The free amino acid content of meat samples increased with NaHCO₃ and high pressure treatment. The effect of high pressure processing was especially notable at a pressure of 300 MPa. Sensory evaluation showed that meat subjected to high pressure processing after NaHCO₃ treatment was tender and juicy. In addition, the sample produced minimal residue in the mouth and was characterized by a good taste.     

Beiträge zur Mikrobestimmung von Kohlenstoff-14 und Tritium

Die Verwendung Con¹⁴C und Tritium zur Lösung kinetischer und analylischer Probleme erfordert zuverlässige Analysenmethoden. Es wird iiber die Herstellimg von Meβgasen durch Naβcerbrennung mil Chromsäure-Jodsäure-Gemischen, Trockenverbrennung in Gegenwart Con Katalysatoren wie Kupferoxid, Kobaltoxid und Zersetzungsprodukte des Silberpermanganats und durch Umsetziingentm geschlossenen Rohr berichtet. Die Aktivitätsniessungen erfolgten auf cerschiedene IVeise. Hier werden besonders die Ergebnisse diskutiert, die durch Ionisationskammermessungen erzielt wurden. Schlieβlich werden einfache Apparaturen zur routinemäβigen Durchfiihrung von Mikroanalysen beschrieben.     

2. Mitteilung: Tetraphenylarsoniumverbindungen und Pentaphenylarsen

Es wurde ein Trennverfahren ausgeabeitet, das es gestattet, die Aktivitätsausbeuten für Mono-, Di- und Triphenylarsenverbindungen, für Tetraphenylarsoniumverbindungen und für Pentaphenylarsen sowie für nicht organisch gebundenes Arsen in neutronenbestrahlten Tetraphenylarsoniumver erbindungen und in Pentaphenylarsen zu bestimmen. Als Trennmethoden werden Extraktion, Ionenaustauwsch und Al₂O₃-Chromatographic benutzt. Zur Reinigung und Ausbeutebestimmung von Di- und Triphenylarsenprodukten sowie von Tetraphenylarsonimverbindungen finden Kristallisations- bzw. Fällungsreaktionen Anwendung unter Ausnutzung des Prinzips der Isotopenverdünnungsanalyse.