平板湍流边界层整体摩擦阻力的振荡性

本文分别用流场显示和阻力测量两种实验方法,证明了平板整体摩擦阻力存在着振荡性,并得到了其振荡的一些规律和特点。另外,提出了一个与时间相关联的内层速度分布模型。并对其合理性进行了研究,从而导出一个与时间相关联的整体摩擦阻力模型。     

Antiplane time-harmonic green’s functions for a circular inhomogeneity with an imperfect interface

Two-dimensional antiplane time-harmonic Green’s functions for a circular inhomogeneity with an imperfect interface are derived. Here the linear spring model with vanishing thickness is employed to characterize the imperfect interface. Explicit expressions for the displacement and the stress fields induced by time-harmonic antiplane line forces located both in the unbounded matrix and in the circular inhomogeneity are presented. When the circular frequency approaches zero, our results reduce to those for the static case. Numerical results are presented to show the influence of the frequency and the imperfection of the interface on the stress and displacement fields.     

Mixing Layers in Sink Flow: Effect of Length of Flight on Mixing in a Channel Downstream

We have experimentally and analytically studied transport of a passive scalar in the wake of a thin flat plate located at the centerline of a planar contraction with flat walls. The constant Launder parameter in the contraction, K = 6.25 ×10^− 6, was twice the value required for a turbulent boundary layer to relaminarize. In addition to the mixing analysis inside the contraction, layer mixing is also investigated downstream, where the flow continues inside a constant cross-section channel. In order to generate the passive scalar, the airflow above the plate was heated and the temperature stratification in the wake was traced by measuring the temperature field using constant current anemometry. Using different plate lengths, we found that the degree of mixing, obtained at a given position in the straight channel, is a function of the distance from the plate trailing edge to the contraction outlet. For a plate which does not protrude into the straight channel, we demonstrate the existence of an optimal trailing edge-contraction outlet distance that results in the lowest possible degree of mixing at a given downstream position in the straight channel. This finding is also supported by a semi-empirical relationship based on our developed self-similar solution for mixing layers in planar contractions.     

软光刻技术制备液晶显示用定向层

以偶氮聚合物光致表面起伏光栅为模板,制备聚二甲基硅氧烷(PDMS)弹性印章,再以可溶性聚酰亚胺(PI)为“墨水”,在石英玻璃上压印出具有规则起伏结构的PI薄膜.由此制备的PI薄膜显示出很好的使液晶分子定向排列的效果.此方法成本低、效率高,是一种实用的液晶定向层薄膜制备方法.     

Preparation and characterization of a novel polyimide liquid crystal vertical alignment layer

A series of diamines with a side chain containing rigid biphenyl unit and nonpolar alkoxy side end group [4-alkoxy-biphenol-3′,5′-diaminobenzoate] (Cm-BBDA, m = 4, 6, 12) were synthesized and their chemical structures were confirmed by Fourier Transform Infrared Spectroscopy (FT-IR) and nuclear magetic resonance spectroscopy (¹H NMR). Then three polyimides (PIs) were prepared by copolymerization of pyromellitic dianhydride (PMDA), 4,4′-methylenedianiline (MDA) and Cm-BBDA in N-methyl-2-pyrrolodone (NMP), and chemical structures of all PIs were confirmed by FT-IR. Structural identification of all poly(amic acid)s (PAA) was performed by ¹H NMR. Liquid crystal (LC) cells were fabricated using these PIs as the alignment layer for characterization of the alignment properties of LCs. It was found that the planar alignment was obtained when PI with side chain containing alkoxy side end group of 4 carbon atoms was employed and the vertical alignment was observed when alkoxy side end groups of 6 or 12 carbon atoms were included. A uniform vertical alignment was validated by polarizing microscopy. It was testified that LC vertical alignment possessed high thermal stability.     

Optimisation of alignment materials for minimising residual retardation in in-plane switching liquid crystal display

The light leakage in a black state of in-plane switching (IPS) liquid crystal display (LCD) associated with rubbing process has been investigated. The mechanical rubbing process with a cloth caused orientation disorders in the liquid crystal directors and these partial orientation disorders result in residual retardations of the IPS LCD, causing the light leakages at the black state. In this study, we theoretically estimated how the light leakage is associated with the rubbing uniformity using 2 × 2 Jones matrix equation and also experimentally confirmed how it is associated with structural properties of the alignment layer. The light leakage was clearly reduced in the alignment layer with reduced crystallinity and flexibility.     

瞬态加速液柱的流体力学问题研究

介绍了用激波和压缩气体加速液柱时的流体动力现象的实验研究,实验中采用了高速摄影技术。研究分为两部分:第一部分,液柱在被加速后在管内的气/液两相流的发展以及流出管外后喷雾流的形成,喷雾流自下而上产生;第二部分,气/液界面上的流体力学不稳定性,即Rayleigh Taylor(RT)不稳定性及Richt myer Meshkov(RM)不稳定性,液柱自上而下运动。实验发现,用此方法产生的喷雾具有流量大、射程远、覆盖面积大等特点。液柱在管内的加速过程中,上端面保持平面,下端面在经历了初始的不稳定性之后形成弹状流。在本实验的驱动压力及马赫数的范围内,RT和RM不稳定性的后期的发展过程比较接近,尽管两者的增长率不同。在RT不稳定性的初始阶段,高密度流体的尖钉先伸入低密度流体中;但是,在RM不稳定性的初始阶段,低密度的气泡先伸入高密度流体中。     

埋层界面和空气表面和频光谱信号贡献的调控

本文研究表明通过膜厚控制和表面等离激元增强方法可有效区分隐藏界面和空气表面的和频振动光谱信号. 以氟化钙基底支撑的PMMA薄膜为模型,观察到隐藏界面和空气表面对和频信号贡献的变化. 通过监控羰基和甲基伸缩振动基团,发现薄PMMA膜的和频信号来自PMMA/空气表面的化学基团-CH₂、-CH₃、-OCH₃和C=O,而厚PMMA膜的和频信号则来自基底/PMMA埋层界面的-OCH₃和C=O基团. 随制膜浓度增大,埋层界面C=O基团的取向角从65°下降到43°,且浓度大于或等于0.5 wt%时,取向角等于45°±2°. 相比之下,空气表面C=O的取向角落在21°∽38°之间. 在金纳米棒存在条件下,表面等离激元可以极大地增强和频信号,尤其是来自埋层界面信号.     

On-line HPLC-HRGC coupling and simultaneous transfer of two different LC fractions: Determination of aliphatic alcohols and sterols in olive oil

A modified loop-type interface is decribed which uses two 6-way valves and concurrent eluent evaporation to perform an on-line transfer and simultaneous gas chromatographic analysis of two different fractions pre-separated by liquid chromatography. The interface is used to simultaneously analyze aliphatic alcohols and sterols present in olive oil. LC pre-separation is carried out using a normal phase column (20 cm × 0.21 cm i.d.) and hexane-isopropanol (99:1) as a mobile phase at a flow of 0.2 ml/min; for the GC analysis a 5 % phenyl, 95 % dimethyl siloxane (25 m × 0.32 mm i.d., 0.4 μm film thickness) column is used.     

An AlGaN/GaN HEMT with reduced surface electric field and improved breakdown voltage

A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.