Evolution of the ring-like vortices and spike structure in transitional boundary layers

At the late stage of transitional boundary layers, the nonlinear evolution of the ring-like vortices and spike structures and their effects on the surrounding flow were studied by means of direct numerical simulation with high order accuracy. A spatial transition of the flat-plate boundary layers in the compressible flow was conducted. Detailed numerical results with high resolution clearly represented the typical vortex structures, such as ring-like vortices and so on, and induced ejection and sweep events...     

膜系光谱系数对膜层参数的一阶和二阶偏导数的计算模型

为了寻找一种膜系深入分析与设计的有力辅助计算工具,从光学薄膜光谱系数的矩阵计算理论出发,基于对矩阵求迹运算的巧妙运用,从数学上建立了准确计算膜系光谱系数关于膜层几何厚度、实际折射率和消光系数等膜层参数的一阶和二阶偏导数的解析模型。这一偏导数计算模型物理上与矩阵理论具有一致的通用性和普适性,适用于任何各向同性的均匀膜系统。在数学上也严格成立,数值编程计算不存在差分近似,精度达到了计算机浮点运算的极限精度。而且算法运算费时少,计算速度快,取得了高度准确性和便于实时化的双重优越性能,非常有利于应用于膜系设计领域来提高膜层数较大时的设计速度和效率。同时,这一模型能非常便捷和准确地给出膜系许多实用的导数信息,对膜系分析、测量和膜厚监控等领域中的相关应用具有重要的参考意义。     

加速器电水锤数值模拟与实验研究

强流加速器水介质形成线放电或击穿形成的冲击波对陶瓷真空界面具有破坏作用。为获得该冲击载荷的信息,应用通用软件ANSYS/LS-DYNA建立了一种水下爆炸有限元模型,将电弧放电等效为爆炸源,模拟得到了冲击波传播时序、压力历史曲线及陶瓷板的加速度响应;为验证模型的有效性,应用"针-板"电极水开关在输出电脉冲40～50 ns、幅值100～300 kV可调的10级陡化前沿Marx发生器上开展了电水锤缩比实验研究。实测了不同击穿电压下冲击波峰压、波速和主脉冲宽度,并依据经验公式计算了放电沉积能量和冲击波能量,平均约17%的间隙放电能量转换为冲击波机械能。对冲击波能量与峰压关系进行了拟合,并与数值模拟结果进行了比较,二者变化趋势基本一致,量级上吻合较好。     

A phase field model for vesicle–substrate adhesion

In this paper, a phase field model is developed for vesicle adhesion involving complex substrate and vesicle geometries. The model takes into account an adhesion potential that depends on the distance of vesicle to the substrate. A variational problem is solved in a 3D computational domain by minimizing the contribution of bending elastic energy and the adhesion energy under the constraints of total surface area and volume, described via a phase function. An adaptive finite element method is used to efficiently compute the numerical solutions of the model. The computational results are validated through comparison of several axisymmetric shapes with the sharp-interface ODE solution. Moreover, we compute shapes for non-axisymmetric situations to support the observation that concave substrates favor adhesion.     

Patterning on single crystalline silicon by laser scanning and alkaline etching

The applicability of laser processing for small-lot micro-electromechanical system devices is discussed in this paper. This simple process could replace conventional complex processes designed with mass production in mind. Ablation, protrusions or surface modification is revealed to occur by argon ion laser scanning into silicon. Which of them occurs depends on the laser power. It is found that the protrusions are covered by a thin layer of oxide; however, oxidation of the modified surface is not established even though some results suggest it. Surface modification is more applicable to surface patterning than coarse protrusion is because the laser-modified surface can be used as a mask in KOH etching to make sharp patterns. The applicability of this method is indicated by demonstrating pattern width control, patterning over a large area and the fabrication of a 16-bit linear scale.     

Computational study of plasma-surface interaction in plasma-assisted technologies

The influence of the unevenness of substrates immersed into plasma important for plasma-based treatment of materials were studied by computer experiment. The role of both substrate properties and plasma parameters was investigated. For this analysis the combination of multidimensional fluid modelling and particle simulation was used. The fluid part of our model consisted of continuity equations for all charged species, energy balance equation for electrons and Poisson equation. The basic scattering processes were also included. The particle simulation technique was used both for the calculation of electron energy distribution function and for the derivation of quantities characterising plasma-surface interaction. This approach enabled us to study in detail the structure of the sheath and presheath near metal substrates with realistic geometries and finite dimensions. The main attention was devoted to the influence of substrate geometry in both macroscopic and microscopic spatial scales on the local electric fields in plasma.     

Physisorption kinetics of electrons at plasma boundaries

Plasma-boundaries floating in an ionized gas are usually negatively charged. They accumulate electrons more efficiently than ions leading to the formation of a quasi-stationary electron film at the boundaries. We propose to interpret the build-up of surface charges at inert plasma boundaries, where other surface modifications, for instance, implantation of particles and reconstruction or destruction of the surface due to impact of high energy particles can be neglected, as a physisorption process in front of the wall. The electron sticking coefficient s_e and the electron desorption time τ_e, which play an important role in determining the quasi-stationary surface charge, and about which little is empirically and theoretically known, can then be calculated from microscopic models for the electron-wall interaction. Irrespective of the sophistication of the models, the static part of the electron-wall interaction determines the binding energy of the electron, whereas inelastic processes at the wall determine s_e and τ_e. As an illustration, we calculate s_e and τ_e for a metal, using the simplest model in which the static part of the electron-metal interaction is approximated by the classical image potential. Assuming electrons from the plasma to loose (gain) energy at the surface by creating (annihilating) electron-hole pairs in the metal, which is treated as a jellium half-space with an infinitely high workfunction, we obtain s_e≈10^-4 and τ_e≈10^-2 s. The product s_eτ_e≈10^-6 s has the order of magnitude expected from our earlier results for the charge of dust particles in a plasma but individually s_e is unexpectedly small and τ_e is somewhat large. The former is a consequence of the small matrix elements occurring in the simple model while the latter is due to the large binding energy of the electron. More sophisticated theoretical investigations, but also experimental support, are clearly needed because if s_e is indeed as small as our exploratory calculation suggests, it would have severe consequences for the understanding of the formation of surface charges at plasma boundaries. To identify what we believe are key issues of the electronic microphysics at inert plasma boundaries and to inspire other groups to join us on our journey is the purpose of this colloquial presentation.     

Piezoelectric scattering limited mobility characteristics of a degenerate surface layer in compound semiconductors at low lattice temperatures

The theory is developed for piezoelectric scattering rate of carriers in a degenerate surface layer under the condition of low temperature when the approximations of the well-known traditional theory are not valid. The scattering rates thus obtained are then used to estimate the zero-field mobility characteristics for the surface layers under similar condition of low temperature. The results for the surface layers in GaAs and ZnO show that when one takes into account either the degeneracy of the carrier ensemble or the finite energy of the phonons or both, the energy dependence of the scattering rates changes significantly from what follows for a non-degenerate ensemble or from the traditional theory, where one makes use of the high-temperature approximation and thus assumes equipartition law for the phonon distribution, and neglects the phonon energy in the energy balance equation of the electron–phonon system. It is observed that the zero-field mobility characteristics that follow from these scattering rates are interesting in that they are quite different from what turns out either for a non-degenerate ensemble or in the high-temperature approximations.     

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.      

氧等离子体处理对纳米二氧化硅溶胶涂覆高强、高模聚乙烯纤维拉伸性能的影响

基于艾琳方程,提出用于定量分析纤维表面和纳米涂覆层间的纳米界面结构的理论模型.实验结果表明,纤维高分子链段受力塑性变形时,纳米界面结构内纳米微粒阻碍其形貌变化产生热激活体积,该热激活体积是纳米界面结构性能的重要表征;氧等离子体处理对纳米二氧化硅溶胶涂覆高强、高模聚乙烯纤维有增韧作用.由不同处理样品的扫描电子显微镜图片和傅里叶变换红外光谱曲线对比分析可知,经氧等离子体处理纳米二氧化硅溶胶涂覆高强、高模聚乙烯纤维的纳米涂覆层纳米颗粒分布均匀,纳米颗粒还填补纤维表面微观缺陷,活性官能团被引入到纤维表面. 关键词： 激活体积 氧等离子体 高强、高模聚乙烯纤维 纳米界面结构