Nature of charge separation and recombination processes within an organic dyad having short spacer

With the help of electrochemical, steady state and time resolved fluorescence (fluorescence lifetimes by using time correlated single photon counting technique) and nanosecond laser flash photolysis methods, the nature of charge separation along with the energy wasting charge recombination processes within a short-chained organic dyad 1-(4-Bromo-phenyl)-3-(2-methoxy-naphthalen-1-yl)-propenone (MNBA) has been revealed. In MNBA, the donor 2-methoxynaphthalene (2MNT) is connected with the acceptor p-bromoacetophenone (PBA) by an unsaturated olefinic bond. Though in the ground state elongated type structure (E-form) is observable from NMR spectra but on photoexcitation, another conformers possibly of the nature of folded type isomeric species (termed as Z-isomer) were also apparent from time resolved fluorescence measurements. However, preponderance of elongated form in the excited singlet state has been established from this time resolved measurements. NMR study on photoirradiated sample and theoretical predictions from computations using CIS method with Lanl2DZ basis set also indicate in favor of the propositions made on the formations of the two possible conformers and the stability of elongated isomeric species in the electronic excited state from the experimental results. The energy wasting charge recombination rate, k_CR, determined from the transient absorption measurements by nanosecond laser flash photolysis (LFP) technique was found to be (k_CR, ∼1.9×10⁵ s⁻¹) significantly lower than the charge-separation rate, k_cs∼9.4×10⁷ s⁻¹, measured from the time resolved fluorescence. This observation demonstrates that MNBA may serve as an efficient candidate to construct artificial light energy conversion devices or components of molecular photovoltaic cells.     

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

The surface composition of as-grown and annealed ZnO nanorods arrays (ZNAs) grown by a two-step chemical bath deposition method has been investigated by X-ray photoelectron spectroscopy (XPS). XPS confirms the presence of OH bonds and specific chemisorbed oxygen on the surface of ZNAs, as well as H bonds on surfaces which has been first time observed in the XPS spectra. The experimental results indicated that the OH and H bonds play the dominant role in facilitating surface recombination but specific chemisorbed oxygen also likely affect the surface recombination. Annealing can largely remove the OH and H bonds and transform the composition of the other chemisorbed oxygen at the surface to more closely resemble that of high temperature grown ZNAs, all of which suppresses surface recombination according to time-resolved photoluminescence measurements.     

On the entropy method and exponential convergence to equilibrium for a recombination–drift–diffusion system with self-consistent potential

We consider a Shockley–Read–Hall recombination–drift–diffusion model coupled to Poisson’s equation and subject to boundary conditions, which imply conservation of the total charge. As main result, we derive an explicit functional inequality between relative entropy and entropy production rate, which implies exponential convergence to equilibrium with explicit constant and rate. We report that the key entropy–entropy production inequality ought rather not to be formulated on the states space of the parabolic–elliptic system, but on the reduced states space of the associated nonlocal drift–diffusion problem, where the Poisson equation is replaced by the corresponding Green function.     

激子复合区厚度对有机磁效应的影响

在常规型有机发光二极管的基础上, 通过改变发光层tri-(8-hydroxyquinoline) aluminum (III) (Alq₃)厚度, 研究了激子复合区厚度对有机发光二极管磁效应的影响.测量了器件在不同温度及偏压下电致发光及注入电流在外加磁场作用下的变化, 着重研究了低温下的有机磁电导效应和有机磁电致发光效应.实验发现, 低温(50 K)高磁场 (500 mT)下, 器件表现出随Alq₃厚度的减薄, 磁电导值由正到负再到正的非单调变化.利用磁场调控的超精细相互作用、 磁场抑制的三重态激子-电荷反应以及激子在界面的淬灭效应, 对有机磁电导在低温下表现出的现象进行了定性的解释.实验结果表明, 通过改变激子复合区的厚度, 可以实现对激子浓度的有效调节, 进而实现对有机磁电导和磁电致发光效应的调节. 该研究进一步丰富了有机磁效应的实验现象, 同时提供了一种调控有机磁效应的手段. 关键词： 激子复合区 激子浓度 有机磁电导 有机磁电致发光     

Luminescence in BaSO4:Eu

Abstract

Photoluminescence and thermoluminescence in BaSO₄:Eu is reported. In earlier works, divalent Eu has been studied in BaSO₄. In the present work Eu was incorporated as in predominantly Eu³⁺ or Eu²⁺ form. It is shown that RE³⁺ ? RE²⁺ conversion or RE²⁺ ? RE⁺ conversion is not an integral part of gamma induced TL. Eu³⁺ ? Eu²⁺ conversion, on the other hand, may be important in UV induced TL. Low UV efficiency of this material is attributed to poor Eu³⁺ ? Eu²⁺ conversion. This is in quite contrast to the analogus material CaSO₄: Eu.     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.     

Effect of calcination temperature on the photocatalytic activity of carbon‐doped titanium dioxide revealed by photoluminescence study

Carbon‐doped titania (C‐TiO₂) nanoparticles were synthesized by the sol–gel method at different calcination temperatures (300–600°C) employing titanium tetraisopropoxide (TTIP) as the titanium source and polyoxyethylene sorbitan monooleate (Tween 80) as the carbon source. The physical properties of C‐TiO₂ samples were characterized by X‐ray diffraction (XRD) and scanning electron microscopy (SEM). The photocatalytic activities were checked through the photodegradation of phenolphthalein (PHP) under ultraviolet irradiation. The UV spectrum showed that the carbon doping extends the absorption range of TiO₂ to the visible region. However, the photocatalytic activity is affected by the electron–hole recombination phenomenon, as revealed by the photoluminescence (PL) study. According to the PL spectra, carbon doping reduces the edge‐to‐edge electron–hole recombination. Nevertheless, the number of defect sites is greatly influenced by the calcination temperature of C‐TiO₂. C‐TiO₂ that was calcined at 400°C showed the highest photodegradation percentage of PHP, which was mainly attributed to the synergic effect of the low direct edge‐to‐edge electron–hole recombination, high content of defect sites, and retention of active electrons on the surface hydroxyl group.     

Total dielectronic recombination rate coefficient for Co-like tungsten

Ab initio calculation of the total dielectronic recombination (DR) rate coefficient from the ground state 3s²3p⁶3d⁹(J=5/2) of Co-like tungsten is performed employing the relativistic distorted-wave approximation with configuration-interaction. The DR contributions mainly come from complex series 3d⁸4ln′l′. The complex series 3p⁵3d¹⁰n′l′, 3p⁵3d⁹4ln′l′ and 3d⁸5ln′l′ also contribute significantly to the total DR rates at relatively high electron temperatures. The l′ and n′ dependences of the partial rate coefficient are investigated. The inclusion of decays into autoionizing levels followed by radiative cascades (DAC) enlarges the total DR rate coefficients by a factor of about 10%. The level-by-level extrapolation method is developed to include DAC effects. The total DR rate coefficients are fitted to an empirical formula. It is shown that at temperatures above 2.5 keV the Burgess-Merts (BM) semiempirical formula can provide DR results with an accuracy of about 15%, whereas at electron temperatures below 100 eV it underestimates the DR rate coefficients by up to a few orders of magnitude and its temperature dependence is completely inadequate. The comparison of the results for Ni-like and Co-like tungsten shows that these two sets of DR rate coefficients are very close in magnitude at relatively high electron temperatures.     

Output characteristics of a cataphoresis He–Sr recombination laser

A cataphoresis discharge tube of 7 mm inner diameter and 38 cm active length was designed and made for the He–Sr⁺ laser. The cataphoretic input of uniform distribution of strontium vapor concentrations along the active region was realized by the cataphoresis effect and the slow flowing (0.5 nl/h) of helium buffer gas. The strontium ionic recombination laser at 430.5 nm and the R–M transition laser at 1.03 μm were obtained with the modified Blumlein circuit by high-frequency longitudinal pulsed discharge. The laser components are concentrated on the 430.5 nm wavelength. Dependences of working parameters such as the pulse frequency, the supply voltage, and the helium pressure on laser output characteristics were measured and discussed. The maximum laser output power of 819 mW and specific power of 56 mW/cm³ were obtained, respectively.