Combined effects of cycling endurance and total ionizing dose on floating gate memory cells

The combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, and the obtained results are listed below. (i) The programmed flash cells with a prior appropriate number of program and easing cycling stress exhibit much smaller threshold voltage shift than without those in response to radiation, which is ascribed mainly to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate. (ii) The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in the programmed state or erased state. (iii) Radiation is more likely to set up the interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.     

Fe~(16+)(1s~22s~22p~6)辐射复合截面的相对论理论研究

利用Dirac-Slater相对论平均自洽场理论,研究了类氖铁离子Fe16+(1s22s22p6)与自由电子的辐射复合(RR)截面,在分析相对论量子数的取值范围及原子模型等对n壳层RR截面的影响的基础上,给出了n壳层RR截面随自由电子能量变化的一般规律.     

Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs

We have investigated efficiency droop in InGaN-based blue LEDs by considering radiative, nonradiative, and carrier spillover processes in the context of internal quantum efficiency (IQE) vs. injection current. If relied on fitting only, both the Auger recombination and an empirical formula for carrier spillover are consistent with experiments. However, the dependence of IQE on quantum well parameters and lack of droop in optical pumping experiments support the notion that carrier spillover is the main mechanism in play.     

Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells

In c-Si solar cells, surface recombination velocity increases as the wafer thickness decreases due to an increase in surface to volume ratio. For high efficiency, in addition to low surface recombination velocity at the rear side, a high internal reflection from the rear surface is also required. The SiO_xN_y film with low absorbance can act as rear surface reflector. In this study, industrially feasible SiO₂/SiO_xN_y stack for rear surface passivation and screen printed local aluminium back surface field were used in the cell structure. A 3 nm thick oxide layer has resulted in low fixed oxide charge density of 1.58 × 10¹¹ cm⁻² without parasitic shunting. The oxide layer capped with SiO_xN_y layer led to surface recombination velocity of 155 cm/s after firing. Using single layer (SiO₂) rear passivation, an efficiency of 18.13% has been obtained with V_oc of 625 mV, J_sc of 36.4 mA/cm² and fill factor of 78.7%. By using double layer (SiO₂/SiO_xN_y stack) passivation at the rear side, an efficiency of 18.59% has been achieved with V_oc of 632 mV, J_sc of 37.6 mA/cm², and fill factor of 78.3%. An improved cell performance was obtained with SiO₂/SiO_xN_y rear stack passivation and local BSF.     

Resonant Fragmentation of the Water Cation by Electron Impact: a Wave-Packet Study

We have investigated the dissociation of a resonant state that can be formed in low energy electron scattering from H₂O⁺. We have chosen the second triplet resonance above the state of H₂O⁺ whose autoionization mainly produces H₂O⁺ ( ). We have considered both dissociation of the resonant state itself, dissociative recombination (DR), or the dissociation of the H₂O⁺ cation after autodetachment, dissociative excitation (DE). The time-evolution of a wave packet on the potential energy surfaces of the resonance and cationic states shows, for the initial conditions studied, that the probability for DR is about 38 % while the probability for DE is negligible.     

Influence of carbazol-9-yl substitution in polysilanes on charge carrier trapping and recombination

A series of poly{[3-(carbazol-9-yl)propyl]silane-co-methylphenylsilane}s were investigated by optical absorption, photoluminescence and thermoluminescence measurements. It was found that the optical absorption bands of the carbazolyl side groups superimpose on those of the Si backbones in the ultraviolet range. This feature reduces photodegradability of Si-Si bonds during UV irradiation. The TL spectra recorded in the 15 - 325 K temperature range after photoexcitation at 15 K show that the carbazolyl side groups act as trapping sites in polysilanes. Increasing density of carbazolyl groups results in increasing population of deeper (ca. 150 meV) traps. Spectral analyses of the thermoluminescence at different temperatures are discussed and compared with analogous results for poly(9-vinylcarbazole) (PVK). It is concluded that the monomeric mechanism of luminescence dominates at low temperatures while the excimeric mechanism prevails at higher temperatures, similarly to PVK.     

Light Emitting Diodes Fabricated from Liquid Phase Epitaxial InAs/InAsxP1‐x‐ySby/InAsx'P1‐x'‐y'Sby' and InAs/InAs1‐xSbx Multi‐Layers

Mid‐infrared light emitting diodes (LED) in 3‐5μm wavelength range have been fabricated from InAs/InAs_xP_1‐x‐ySb_y/InAs_x'P_1‐x'‐y'Sb_y' composition graded layer and InAs/InAsSb multilayers. The heterostructures were grown by liquid phase epitaxy (LPE) between 600 and 520°C. An output power of 3.1 mW at 11K and of 10 μW at 300 K have been obtained under a peak current of 100 mA (50 % duty ratio) from InAsSb multilayers. Recombination mechanisms for these diodes were studied by temperature‐dependent emission spectra using Fourier transform infrared (FTIR) measurement system with double modulation. The output powers of the LEDs decrease rapidly at temperatures above 153 K suggesting that nonradiative and Auger recombinations are the main limitation of the device performance at high temperatures.     

Single-molecule tethered particle motion to study protein-DNA interaction

Single-molecule techniques have been demonstrated as powerful tools to investigate individual protein-DNA interactions that are difficult to access by conventional biochemical techniques. These methods are popularly used to obtain valuable and detailed molecular mechanisms of enzyme functions. Currently, we have used single-molecule tethered particle motion to investigate protein-DNA interactions, including homologous recombination, site-specific recombination, DNA package, and the nucleosome remodeling process, and useful information was obtained. Here, we will describe the experimental designs and present the information obtained.