Distributions and correlations of constituent quarks in jets

In the frame of the quark recombination model, we study the momentum distributions and cor- relations of constituent quarks in jets by analyzing the final state hadrons generated by PYTHIA for the hard parton fragmentation processes in vacuum. Parameterizations for the distributions are tabulated.     

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors.A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current.The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron-hole pairs,and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field.The field dependence,the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.The simulated magnetoresistance shows good consistency with the experimental results.     

Recombination processes in europium-doped cadmium iodide crystals

Results of comprehensive research into optical and luminescent-kinetic characteristics of europium-doped cadmium iodide crystals excited by nitrogen laser radiation, α-particles, and x-rays are presented. Crystals under study have been grown by the Bridgman–Stockbarger method. The doping EuCl₃ admixture was introduced into the charge in quantities of about 0.05 and 1.0 mol%. Impurity absorption detected in the near-edge region of the crystals is interpreted as part of the Eu²⁺ ion long-wavelength band associated with f–d-transitions. The cation impurity and matrix defects in CdI₂:Eu²⁺ crystals create complex centers responsible for emission with a maximum in the 580–600-nm region. The short component in the luminescence decay kinetics of weakly-doped crystal excited by α-particles and x-ray photons is due to the exciton emission characteristic of CdI₂. The slow component in the scintillation pulse results from recombination of charge carriers followed by creation of exciton-like states on the defect-impurity centers. Laser or x-ray excitation induces light-sum accumulation on the trapping levels at a depth of 0.2–0.6 eV that is mainly related to matrix microdefects. Trapping centers associated with the chlorine impurity are observed in the heavily-doped crystal. Photostimulated luminescence at 85 K arising at the electron stage of the recombination process is caused by recombination of electrons released from F-type centers with holes localized near the activator. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 3, pp. 358–364, May–June, 2009.     

Photoionization and electron–ion recombination of Cr I

Using the unified method, the inverse processes of photoionization and electron–ion recombination are studied in detail for neutral chromium, (), for the ground and excited states. The unified method based on close-coupling approximation and R-matrix method (i) subsumes both the radiative recombination (RR) and dielectronic recombination (DR) for the total rate and (ii) provides self-consistent sets of photoionization cross sections σ_PI and recombination rates α_RC. The present results show in total photoionization of the ground and excited states an enhancement in the background at the first excited threshold, state of the core. One prominent phot-excitation-of-core (PEC) resonance due to one dipole allowed transition (⁶S-⁶P^o) in the core is found in the photoionization cross sections of most of the valence electron excited states. Structures in the total and partial photoionization, for ionization into various excited core states and ground state only, respectively, are demonstrated. Results are presented for the septet and quintet states with n≤10 and l≤9 of Cr I. These states couple to the core ground state ⁶S and contribute to the recombination rates. State-specific recombination rates are also presented for these states and their features are illustrated. The total recombination rate shows two DR peaks, one at a relatively low temperature, at 630 K, and the other around 40,000 K. This can explain existence of neutral Cr in interstellar medium. Calculations were carried out in LS coupling using a close-coupling wave function expansion of 40 core states. The results illustrate the features in the radiative processes of Cr I and provide photoionization cross sections and recombination rates with good approximation for this astrophysically important ion.     

曝光强度对卤化银微晶中载流子行为及其陷阱效应的影响

针对卤化银感光材料潜影形成过程中光作用动力学问题,分析了曝光强度对光生载流子行为和电子陷阱效应的影响,认为伴随着曝光强度的增加,影响光电子衰减的因素由电子陷阱起主要作用演化到电子陷阱和复合中心共同起作用进而演化到复合中心起主要作用.     

Temperature-dependent photoluminescence of arsenic-doped Si nanocrystals

The characteristics of temperature-dependent photoluminescence (PL) from Si nanocrystals and effects of arsenic-doping (As-doping) were investigated. The Si nanocrystals on a p-type Si substrate were prepared by low pressure chemical vapor deposition and post-deposition thermal oxidation. The As-doping process was carried out using the gas-phase-doping technique. Temperature-dependent PL from Si nanocrystals exhibited considerable differences between samples with/without As-doping. Phase transition between electron-hole liquid and free exciton was observed in the undoped Si nanocrystals, leading to the increase in PL intensity with temperature less than 50 K. Electron emission from As-doped Si nanocrystals to the p-Si substrate was responsible for the significant increase in PL intensity with temperature greater than 50 K. Characteristics of light emission from Si nanocrystals will facilitate the development of silicon-based nanoscaled light-emitting devices.     

紫外激发下锰掺杂纳米氧化锌

应用气相传输法, 以铜为催化剂, 在硅衬底上制备了锰掺杂氧化锌纳米四足晶须. 利用x射线与电子衍射谱、扫瞄电镜和高分辨率透射电镜, 对样品形貌、结构和成份进行表征与检测; 通过355nm与375nm紫外光激发下掺杂与未掺杂样品光致发光谱的对比, 结合拉曼散射谱与光致激发谱对掺杂样品中反常光致发光机理进行分析. 结果表明, 样品沿［0001］方向生长的前端和内部长有纤细刺状结构的中空六方管组成; 样品中掺入Mn2+的无辐射复合中心作用, 是掺杂样品紫外辐射强度和谱宽变小的主要原因, 氧化锌晶体中晶格周期对Mn2+中d-d电子跃迁过程的影响, 是375nm紫外光激发下掺杂样品中415nm辐射峰产生的主要原因.     

Role of Dimensionality for Photocatalytic Water Splitting: CdS Nanotube versus Bulk Structure

Using state-of-the-art density functional theoretical calculations, we have modelled a facetted CdS nanotube (NT) catalyst for photocatalytic water splitting. The overall photocatalytic activity of the CdS photocatalyst has been predicted based on the electronic structures, band edge alignment, and overpotential calculations. For comparisons, we have also investigated the water splitting process over bulk CdS. The band edge alignment along with the oxygen evolution reaction/hydrogen evolution reaction (OER/HER) mechanism studies help us find out the effective overpotential for the overall water splitting on these surfaces. Our study shows that the CdS NT has a highly stabilized valence band edge compared to that of bulk CdS owing to strong p–d mixing. The highly stabilized valence band edge is important for the hole-transfer process and reduces the risk of electron-hole recombination. CdS nanotube requires less overpotential for water oxidation reaction than the bulk CdS. Our findings suggest that the efficiency of the water oxidation/reduction process further improves in CdS as we reduce its dimensionality, that is going from bulk CdS to one-dimensional nanotube. Furthermore, the stabilized valence band edge of CdS nanotube also improves the photostability of CdS, which is a problem for bulk CdS.     

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov–Perel' (DP) mechanism can be more important than the Bir–Aronov–Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.     

Multi-electron-recombination rates estimated within dense plasmas

We investigate the rates for multielectron recombination within a dense plasma with Maxwellian electron energy distribution function. We find that these rates can be high within dense plasmas, and they should be treated in the simulations of the plasmas created by intense radiation, in particular for plasmas created by intense VUV radiation from free-electron-laser (FEL), or for modeling the inertial confinement fusion (ICF) plasmas.