Enhancement of electron–ion recombination rates at low energy range in the heavy ion storage ring CSRm

Recombination of Ar¹⁴⁺, Ar¹⁵⁺, Ca¹⁶⁺, and Ni¹⁹⁺ ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern Physics, Lanzhou,China. For each ion, the absolute recombination rate coefficients have been measured with electron–ion collision energies from 0 meV to 1000 meV which include the radiative recombination(RR) and also dielectronic recombination(DR)processes. In order to interpret the measured results, RR cross sections were obtained from a modified version of the semiclassical Bethe and Salpeter formula for hydrogenic ions. DR cross sections were calculated by a relativistic configuration interaction method using the flexible atomic code(FAC) and AUTOSTRUCTURE code in this energy range. The calculated RR + DR rate coefficients show a good agreement with the measured value at the collision energy above 100 meV.However, large discrepancies have been found at low energy range especially below 10 meV, and the experimental results show a strong enhancement relative to the theoretical RR rate coefficients. For the electron–ion collision energy below 1 meV, it was found that the experimentally observed recombination rates are higher than the theoretically predicted and fitted rates by a factor of 1.5 to 3.9. The strong dependence of RR rate coefficient enhancement on the charge state of the ions has been found with the scaling rule of q^3.0, reproducing the low-energy recombination enhancement effects found in other previous experiments.     

光电耦合对InGaN/GaN量子阱光学性能的影响

围绕高性能GaN基垂直腔面发射激光器(VCSELs),设计了两种具有不同光电耦合强度的InGaN/GaN量子阱(QWs)样品,研究了它们的光学性质。样品A在腔模的两个波腹处各放置两个InGaN耦合量子阱,而样品B在腔模的一个波腹处放置5个InGaN耦合量子阱。计算表明样品A具有较大的相对光限制因子1.79,而样品B为1.47。光学测试发现样品A有着更高的内量子效率(IQE)和更高的辐射复合效率。使用两种样品制作了光泵VCSEL结构,在光激发下实现激射,其中基于样品A的VCSEL有着更低的激射阈值。结果表明有源区结构会显著影响量子阱与光场的耦合作用、外延片的内量子效率、辐射复合寿命和VCSEL激射阈值,同时也说明样品A的有源区结构更有利于制作低阈值的VCSEL器件。     

硝酸铟诱导的电沉积氧化锌纳米柱光学性质裁剪

为在新型太阳能电池等光电器件中应用ZnO纳米结构,需要对ZnO纳米结构阵列的几何形貌及光电物理性质进行裁剪与操控。采用电化学沉积路线制备ZnO纳米柱阵列,In(NO3)3与NH4NO3两种盐类被溶入在传统Zn(NO3)2主电解液中。对ZnO纳米柱阵列进行扫描电子显微镜、透射反射光谱、光致发光光谱测试,分析其形貌与光电物理性质。随着引入的In(NO3)3浓度的增加,ZnO纳米柱阵列的平均直径随之由57 nm减小至30 nm。同时ZnO纳米柱的阵列密度也可降低,进而增大纳米柱间距至41 nm。由于新的盐类的引入,ZnO纳米柱的光学带隙由3.46 eV蓝移至3.55 eV。随着电解液中In(NO3)3的增加,ZnO纳米柱的斯托克斯位移由198 meV减小至154 meV,ZnO纳米柱中的非辐射复合可以得到一定程度的抑制。通过在主电解液中引入In(NO3)3与NH4NO3两种盐类,可对ZnO纳米柱的直径、密度、间距、透射反射率、光学带隙、近带边发射与非辐射复合进行操控与裁剪。     

ZnS/SiO2协同包覆光阳极制备高效率Zn-Cu-In-Se量子点敏化太阳能电池

通过光阳极协同包覆的策略抑制Zn-Cu-In-Se(ZCISe)量子点敏化太阳能电池(QDSC)中光阳极/电解液界面上的电荷复合过程,提高电荷收集效率和电池光伏性能。采用溶液法在ZCISe量子点敏化的光阳极表面依次沉积包覆ZnS和SiO₂双钝化层,实现较单一ZnS包覆层更有效的界面电荷复合抑制作用,从而提高QDSC的性能。在包覆ZnS/SiO₂双钝化层后,所组装的ZCISe QDSC光电转换效率由传统单一ZnS包覆的12.17%提高到13.23%,这归因于双钝化层对光阳极/电解液界面电荷复合过程的有效抑制,电荷收集效率得到相应提升。     

Sub-Doppler Rydberg spectroscopy by laser-induced two-step recombination at the ESR

For the first time, laser induced radiative electron capture (LIREC) has been combined with sub-Doppler two-photon spectroscopy between Rydberg states of hydrogen-like argon. This revised version was published online in July 2006 with corrections to the Cover Date.     

高n双电子复合伴线对类氦镁离子 Kα共振线贡献的理论计算

利用多组态Dirac-Fock方法计算了类氦镁离子的双电子复合截面.分析了类氦镁离子的高n双电子伴线结构及其对类氦镁离子Kα共振线的影响.结果表明类氦镁离子的高n双电子伴线几乎都分布于Kα共振线的长波一侧.随着n的增加,DS强度呈现明显减小的趋势.虽然来自KLM(n=3)的发射线最强,但n>3的部分依然给出了非常重要的贡献.即便是来自n>10的共振的贡献也是不可忽略的.并且高n双电子伴线随着n的增加不断接近Kα共振线,导致和Kα共振线的强烈混合.在实验测量中会使Kα共振线峰位的测量值向长波方向移动,使谱形加宽,并且增强了Kα共振线测量值强度.     

Local dominance and local recombination in MOEAs on 0/1 multiobjective knapsack problems

This work studies and compares the effects on performance of local dominance and local recombination applied with different locality in multiobjective evolutionary algorithms on combinatorial 0/1 multiobjective knapsack problems. For this purpose, we introduce a method that creates a neighborhood around each individual and assigns a local dominance rank after alignment of the principle search direction of the neighborhood by using polar coordinates in objective space. For recombination a different neighborhood determined around a random principle search direction is created. The neighborhood sizes for dominance and recombination are separately controlled by two different parameters. Experimental results show that the optimum locality of dominance is different from the optimum locality of recombination. Additionally, it is shown that the performance of the algorithm that applies local dominance and local recombination with different locality is significantly better than the performance of algorithms applying local dominance alone, local recombination alone, or dominance and recombination globally as conventional approaches do.     

Elementary Many‐Particle Processes in Plasma Microfields

The effect of electric and magnetic plasma microfields on elementary many‐body processes in plasmas is considered. As detected first by Inglis and Teller in 1939, the electric microfield controls several elementary processes in plasmas as transitions, line shifts and line broadening. We concentrate here on the many‐particle processes ionization, recombination, and fusion and study a wide area of plasma parameters. In the first part the state of art of investigations on microfield distributions is reviewed in brief. In the second part, various types of ionization processes are discussed with respect to the influence of electric microfields. It is demonstrated that the processes of tunnel and rescattering ionization by laser fields as well as the process of electron collisional ionization may be strongly influenced by the electric microfields in the plasma. The third part is devoted to processes of microfield action on fusion processes and the effects on three‐body recombination are investigated. It is shown that there are regions of plasma densities and temperatures, where the rate of nuclear fusion is accelerated by the electric microfields. This effect may be relevant for nuclear processes in stars. Further, fusion processes in ion clusters are studied. Finally we study in this section three‐body recombination effects and show that an electric microfield influences the three‐body electron‐ion recombination via the highly excited states. In the fourth part, the distribution of the magnetic microfield is investigated for equilibrium, nonequilibrium, and non‐uniform magnetized plasmas. We show that the field distribution in a neutral point of a non‐relativistic ideal equilibrium plasma is similar to the Holtsmark distribution for the electrical microfield. Relaxation processes in nonequilibrium plasmas may lead to additional microfields. We show that in turbulent plasmas the broadening of radiative electron transitions in atoms and ions, without change of the principle quantum number, may be due to the Zeeman effect and may exceed Doppler and Stark broadening as well. Further it is shown that for optical radiation the effect of depolarization of a linearly polarized laser beams propagating through a magnetized plasma may be rather strong. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Calculation of photon angular distribution and polarization for radiative recombination for highly charged helium-like ions

A systematic study is carried out on the angular distribution and polarization of photons emitted following radiative recombination of He-like ions by a non-relativistic dipole approximation. In order to incorporate the screening effect due to inner-shell electrons, a distorted wave approach is used. The dependence of the calculated angular distribution and polarization on the reduced-energy and nuclear charge are fitted by the corresponding empirical formulas, respectively.     

Electron-Vibrational Structure in the 2.8–3.6 eV Range of the Photoluminescence Spectrum of Borozon

The electron-vibrational structure in the 2.8–3.6 eV range of the photoluminescence spectrum of borozon polycrystals and single crystals has been investigated. The existence of the structure of the leading PF-1 line, its change depending on the measurement temperature and the quality of the sample and after irradiation at low temperature and annealing, and the electron-phonon interaction on the PF center with the participation of longitudinal optical phonons made it possible to develop a model of donor-acceptor recombination for interpreting the nature of the PF center.