配备电子冷却装置的重离子储存环为开展高电荷态离子的双电子复合(dielectronic recombination,DR)精密谱学研究提供了绝佳的实验平台。本工作在兰州重离子加速器冷却储存环主环(HIRFL-CSRm)上开展了类锂36,40Ar15+离子的双电子复合实验,实验观测了电子-离子质心系能量范围为0~35 eV的双电子复合速率系数谱。通过外推法获得了36,40Ar15+离子2s1/2→2p1/2和2s1/2→2p3/2的跃迁能量。同时利用GRASP2K程序理论计算了36,40Ar15+离子2s1/2→2p1/2和2s1/2→2p3/2跃迁的质量移动因子和场移动因子,进而得到双电子复合谱的同位素移动值。36,40Ar15+离子2s1/2→2p1/2和2s1/2→2p3/2同位素移动分别为0.861 meV和0.868 meV。它们均小于目前CSRm上双电子复合实验的实验分辨为~10 meV,进而解释了实验测量的DR谱上未能观察到同位素移动的原因。然而,高电荷态离子的同位素移动场效应与原子序数Z5成正比,因此,在重离子加速器冷却储存环实验环(HIRFL-CSRe)以及未来大型加速器--强流重离子加速器装置(HIAF)上有望通过DR精密谱学方法研究高电荷态重离子甚至放射性离子的同位素移动,进而获得相关原子核的核电荷半径等信息。The cooler storage ring is equipped with an electron-cooler. It is an excellent experimental platform for dielectronic recombination (DR) experiment of highly-charged ions. In this paper, the dielectronic recombination experiments of lithium-like Ar15+ ions with mass number 36 and 40 are conducted at the HIRFL-CSRm(main ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou). The experimental electron-ion collision energy scale is from 0 eV to 35 eV. Extrapolation method is exploited to obtain the excitation energies of transitions 2s1/2→2p1/2 and 2s1/2→2p3/2 of the 36,40Ar15+ ions from experimental data. Meanwhile, GRASP2K program is utilized to calculate the mass shift factors and field shift factors of 36,40Ar15+ ions for 2s1/2→2p1/2 and 2s1/2→2p3/2 transitions to obtain isotope shifts in DR spectra. In theoretical calculation, isotope shifts of 36,40Ar15+ ions corresponding to 2s1/2→2p1/2 and 2s1/2→2p3/2 are 0.861 meV and 0.868 meV, respectively. They are both less than the experimental precision (~10 meV) of these dielectronic recombination experiments at the CSRm, which explains that isotope shifts cannot be distinguished from the experimental dielectronic recombination spectra. However, the field shift of highly-charged ions is proportional to Z5. In the future, the dielectronic recombination experiments of highly-charged heavy ions even radioactive ions will be conducted at the HIRFL-CSRe (experimental ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou) and the future large accelerator facility--HIAF(High intensity Heavy-ion Accelerator Facility) to measure isotope shifts to obtain the nuclear charge radius information. 相似文献
In the femtosecond laser-produced Cu-plasma, the transient transition dynamics that the excited state 5s~('4)D_(7/2) via electron–ion recombination transfers to 4p~('4)F_(9/2)~0(465.11 nm, Λ1 line) and 4p~('4)D_(7/2)~0(529.25 nm, Λ_2 line) states are investigated by using the time-resolved spectroscopy. The occupation number and relevant lifetime of the excited state 5s~('4)D_(7/2),the temporal evolutions of spectral intensities for Λ_1 line and Λ_2 line emissions are demonstrated to be in direct proportion to the employed laser intensity, which reveals the transient features of transition dynamics clearly differing from that resulted in the traditional collision excitation. Furthermore, some unique characteristics for Λ_1 and Λ_2 transitions stemming from electron–ion recombination are examined in detail. 相似文献
This paper presents the influence of Ar8+ and O6+ ion implantation on the recombination parameters of n and p type Si samples. These parameters were determined from the fitting of theoretical characteristics to the experimental photothermal radiometric (PTR) characteristics. We found that with the increasing ion implantation doses (i) the changes of the bulk recombination lifetimes and the carrier diffusivity were not observed; (ii) the increasing of the surface recombination velocities and the parameter A were observed. This paper also proves that it is possible to interpret the experimental PTR characteristics with a relatively simple effective model of a PTR signal. 相似文献
Inx(O,OH,S)y buffer layer has been applied to Cu(In,Ga)Se2(CIGSe) solar cell by chemical bath deposition (CBD). The cell efficiency was observed to be dependant on film growth mode of Inx(O,OH,S)y buffer layer, which was affected by the CBD conditions such as sulfur chemical concentration and deposition time. The fabricated solar cell showing higher conversion efficiency was observed to have non-porous and uniform texture of buffer, whereas the lower conversion efficiency cells were found to have fibrous texture or detached texture of buffer. The fibrous texture and the detached texture induced high series resistance and lower shunt resistance, respectively, which all resulted in lower cell efficiency with reduced fill factor. External quantum efficiency and temperature dependence of open circuit voltage measurements revealed that the lower efficiency cells suffered from higher interface recombination loss due to the related defects. 相似文献
The selection of either an oxidising or inert ambient during high temperature annealing is shown to affect dopant activation and electron–hole recombination in boron implanted silicon samples. Samples implanted with B at fluence between 3 × 1014 cm–2 to 3 × 1015 cm–2 are shown to have lower dopant activation after oxidation at 1000 °C compared to an equivalent anneal in an inert ambient. In addition, emitter recombination is shown to be up to 15 times higher after oxidation compared with an inert anneal for samples with equivalent passivation from deposited Al2O3 films. The observed increase in recombination for oxidised samples is attributed to the enhanced formation of boron‐interstitial defect clusters and dislocation loops under oxidising conditions. It is also shown that an inert anneal for 10 minutes at 1000 °C prior to oxidation has no significant impact on sheet resistance or recombination compared with a standard oxidation process.
苯乙烯和喹啉是有机荧光材料的常用官能基团,已经在有机发光二极管(OLED)中得到了应用.本文用一种苯乙烯基喹啉衍生物2,2’-(2,5-二甲氧基-1,4-苯二乙烯基)双-8-乙酰氧基喹啉(MPV-AQ)同时作为发光材料和电子传输材料,研究了它在OLED器件中的稳态和瞬态光电性质.研究发现,在基于N,N’-二(萘-1-基)-N,N’-二苯基-联苯胺(NPB)/MPV-AQ的双层OLED中,电子以Fowler-Nordheim(FN)隧穿的方式从阴极注入到MPV-AQ层,这与MPV-AQ单电子器件中电子以Richardson-Schottky(RS)热电子发射的注入方式完全不同.这种电子注入方式的差别,主要是由于MPV-AQ的电子迁移率较低,大量空穴在NPB/MPV-AQ界面处形成电荷积累,使得MPV-AQ层的能带发生了弯曲,造成阴极一侧的电子隧穿距离减小,从而导致了FN隧穿的发生.通过拟合稳态电流-电压特性得到了电子注入势垒为0.23 e V,通过瞬态电致发光的延迟时间计算得到MPV-AQ的电子迁移率在10-6 cm~2/(V·s)数量级,通过瞬态电致发光的衰减获得... 相似文献
利用基于全相对论组态相互作用理论的FAC程序包, 详细研究了温度在0.1~1650 eV范围内Xe8+离子的双电子复合(DR)过程。 通过比较4s, 4p和4d壳层电子激发的双电子复合速率系数, 发现温度在10 eV以上时, 内壳层4p电子激发的双电子复合速率数对总双电子复合速率系数有很重要的贡献, 而4s电子激发对总双电子复合速率数贡献小于7.5%。 给出了△n=0, 1和2 三类芯激发对总双电子复合速率系数的贡献以及自由电子俘获到不同主量子数的双电子复合速率系数, 发现△n=2的芯激发和n′>15的DR速率系数对总DR速率系数的贡献也很重要。 进一步给出了△n=0, 1和2 三类芯激发和总DR速率系数的拟合参数, 拟合结果和计算值符合, 偏差小于1%。 通过对双电子复合、 辐射复合以及三体复合速率系数的比较得知, 在温度高于1 eV时, DR过程是Xe8+离子的主要复合过程。Based on the fully relativistic configuration interaction method, theoretical calculations are carried out for the dielectronic recombination (DR) rate coefficients of Xe8+ ions in the temperature region from 0.1 to 1 650 eV. The comparison of the DR rate coefficients from 4s, 4p and 4d subshell excitations shows that 4d subshell excitation dominates in the whole temperature region. The contribution from 4p subshell excitation is very important at temperature above 10 eV and the contributions from 4s subshell excitation is lower than 7.5% in the whole temperature region. Similarly, the comparison of the DR rate coefficients through △n=0, 1 and 2 core excitation shows that the contribution from △n=2 core excitation can not be neglected, the contributions from n′>15 can also not be neglected. The DR rate coefficients of △n=0, 1 and 2 core excitation and the total DR rate coefficients are fitted with some parameters, which are in good agreement with theoretical calculations values (within 1% difference). The total DR rate coefficients are greater than radiative recombination (RR) and three body recombination (TBR) rate coefficients at temperature above 1 eV. Therefore, the DR process can strongly influence the ionization balance of laser produced xenon plasmas. 相似文献