高精度光学对准测量装置的设计

设计了一套光学对准测量装置,该装置主要由面阵CCD相机、光学镜头、图像处理模块、LED红光光源、球面反光镜组成。介绍了测量原理,测量目标采用等腰三角形排列,通过面阵CCD对目标所反射的图像进行采集,由图像处理模块对该图像进行实时处理,能够同时得到X、Y、Z以及旋转角度等四维坐标数据。推导了光斑图像坐标和被测平面距离等计算公式,并进行了对准精度分析。结果表明,该装置位置误差〈1mm,角度误差为0．24°,实现了高精度、自动、快速对准测量。     

High precision Zernike modal gray map reconstruction for liquid crystal corrector

This paper proposes a new Zernike modal gray map reconstruction algorithm used in the nematic liquid crystal adaptive optics system. Firstly, the new modal algorithm is described. Secondly, a single loop correction experiment was conducted, and it showed that the modal method has a higher precision in gray map reconstruction than the widely used slope method. Finally, the contrast close-loop correction experiment was conducted to correct static aberration in the laboratory. The experimental results showed that the average peak to valley (PV) and root mean square (RMS) of the wavefront corrected by mode method were reduced from 2.501\lambda (\lambda =633~nm) and 0.610\lambda to 0.0334\lambda and 0.00845\lambda , respectively. The corrected PV and RMS were much smaller than those of 0.173\lambda and 0.048\lambda by slope method. The Strehl ratio and modulation transfer function of the system corrected by mode method were much closer to diffraction limit than with slope method. These results indicate that the mode method can take good advantage of the large number of pixels of the liquid crystal corrector to realize high correction precision.     

稳态平板法在热电器件热电转换效率测试中的应用

将稳态平板法测导热系数的实验应用于热电器件热电转换效率的测试,通过测量输入器件的传热速率和负载的输出电功获得热电器件的热电转换效率。研究发现,稳态平板法可以测量工作温度在室温到100℃范围内热电器件的热电转换效率。     

电荷耦合器件的γ辐照剂量率效应研究

对电荷耦合器件进行了不同剂量率的γ辐照实验,通过多种参数的测试探讨了剂量率与电荷耦合器件性能退化的关系,并对损伤的物理机理进行分析。辐照和退火结果表明:暗信号和暗信号非均匀性是γ辐照的敏感参数,电荷转移效率和饱和输出电压随剂量累积有缓慢下降的趋势;暗场像素灰度值整体抬升,像元之间的差异显著增加;电荷耦合器件的暗信号增量与剂量率呈负相关性,器件存在潜在的低剂量率损伤增强效应。分析认为,剂量率效应是由界面态和氧化物陷阱电荷竞争导致的。通过电子-空穴对复合模型、质子输运模型和界面态形成对机理进行了解释。     

Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications

Quasi-crystal aluminum-doped zinc oxide (AZO) films were prepared by in situ radio frequency (RF) magnetron sputtering (sputtering without annealing) on glass substrates. The influence of deposition parameters on the optoelectronic and structural properties of the in situ deposited quasi-crystal AZO films was investigated in order to compare resulting samples. X-ray diffraction (XRD) patterns show that the quasi-crystal AZO thin films have excellent crystallization improved with increase of the RF power and substrate temperature, with an extremely preferential c-axis orientation exhibit sharp and narrow XRD pattern similar to that of single-crystal. Field emission scanning electron microscopy (FESEM) images show that quasi-crystal AZO thin films have uniform grains and the grain size increase with the increase of RF power and substrate temperature. Craters of irregular size with the columnar structure are observed in the quasi-crystal AZO thin films at a lower substrate temperature while many spherical shaped grains appeared at a higher substrate temperature. The average optical transmittance of all the quasi-crystal AZO films was over 85% in the 400-800 nm wavelength range. The resistivity of 4.176 × 10⁻⁴ Ω cm with the grain size of 76.4891 nm was obtained in the quasi-crystal AZO thin film deposited at 300 °C, under sputtering power of 140 W.     

Selective area rare-earth doping of planar glass samples for monolithic integration of optically passive and active waveguides

Successful demonstration of selective area doping of planar glass samples for monolithic integration of optically passive and active devices on a single chip is presented. Salt solution of erbium was delivered onto pre-sintered germano-silicate samples via a syringe. The samples were then consolidated to form dense glass layers containing regions doped with rare earth. Erbium tri-chloride solution, 0.1 M, was used during the solution doping phase, with the resulting erbium atomic percentage ranging from more than 0.1-0.4%, increasing linearly with the number of drips applied.     

Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.     

两种主体材料中Ir(ppy)3和Rubrene的能量传递特性

OLED技术被认为是最有可能取代液晶显示的全新技术,而OLED中的有机电致磷光器件是近年来的研究热点.有机电致磷光器件的发光层往往采用主客体掺杂体系,主客体分子内的能量传递是磷光发光体分子被激发的主要途径,因此选择吸收能量和传递能量好的主体材料是改进有机电致磷光器件性能的主要途径之一.文章分别以PVK和CBP作为主体材料,以磷光材料Ir(PPY)3和荧光材料Rubrene作为掺杂剂,制备了不同配比的器件,研究了主体材料和掺杂剂之间的能量传递特性.结果发现,这两种主体材料分别通过Ir(ppy)3向Rubrene传递能量是主要的能量传递机制,而且CBP作为主体时能量传递比PVK更充分.另外掺入Ir(ppy)3后的器件比不掺Ir(ppy)3的器件在相同电压下的光功率明显增强.当我们增加Ir(PPY)3的浓度时,相同电压下的光功率下降,浓度猝灭效应增强.     

利用LiF/Al作为电极的有机电致发光器件

本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m²、14000cd/m²提高到19600cd/m²,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.     

Effect of Detachments in Asymmetric Simple Exclusion Processes

Asymmetric simple exclusion processes are important for understanding low-dimensional multi-particle dynamic phenomena. The effect of irreversible detachments of particles on dynamics of asymmetric simple exclusion processes is studied using analytical and computer simulation techniques. In the simplest model, where particles can only detach from a single site in the bulk of the system, a theory is presented and used to calculate explicitly phase diagrams and particle density profiles. The complexity of the phase behavior is discussed in terms of a recent domain-wall theory for driven lattice systems. The theoretical results qualitatively and quantitatively agree with computer Monte Carlo simulations.