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81.
卡尔曼滤波分光光度法同时测定钢样中的硅、磷、砷   总被引:1,自引:0,他引:1  
研究了在聚乙烯醇存在下,硅、磷、砷钼杂多酸与罗丹明6G形成离子缔合物的反应,建立了能同时测定硅、磷、砷的卡尔曼滤波分光光度法。用于钢样中微量硅、磷、砷的同时测定,操作简便快速,相对误差小于8%。  相似文献   
82.
The results of NMR-spectroscopy studies of the structure, dynamic stereochemistry, and intermolecular interactions in solutions of organic derivatives of penta-and hexacoordinated silicon, germanium, and tin containing amidomethyl, lactamomethyl, and related bidentate ligands are surveyed. For the series of works “Dynamic stereochemistry of hypervalent compounds of silicon, germanium, and tin,” the author was awarded the Academia Europea Prize for young scientists from CIS in 1996. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 11, pp. 1912–1934. November, 1997.  相似文献   
83.
林建新  郑勇  郑瑛  魏可镁 《无机化学学报》2006,22(10):1778-1782
采用溶胶凝胶法,以蔗糖和正硅酸乙酯(TEOS)为原料,草酸为TEOS水解的催化剂,制备均相碳化硅前驱体,在氩气氛和高温条件下(1 350~1 600 ℃)将碳化硅先驱体进行碳热还原,制备出高比表面积的SiC。考察了水/TEOS物质的量的比、碳/硅物质的量的比及镍盐等因素对碳化硅比表面积的影响。结果表明,当nwater/nTEOS=7.5,nC/nSi=4时,适宜的镍催化剂(nNi/nTEOS=0.005),凝胶形成的时间最短,镍盐的加入可使碳热还原温度降低200 ℃。  相似文献   
84.
A pursuerP, whose speed is bounded by 1, wants to get closer to an evaderE, whose speed is bounded by >1.P wants to reduce his distancePE fromE below the capture radius . Both players are confined to a circular arena. This problem is equivalent to a problem discussed by Flynn, who characterized and gave numerical bounds to the least upper boundd* on the values ofPE thatE can maintain. He used direct methods and did not use Isaacs' theory.We solve our problem relying on the theory of singular surfaces in differential games. We construct and investigate barriers of the game of kind, and we replace Flynn's bounds ond* by analytical (exact) values for various speeds .The support of the TW Department of THT, Enschede, Holland, is gratefully acknowledged.  相似文献   
85.
By use of salt elimination, the transition metal substituted oligosilanes (η5-C5Me4Et)Fe(CO)2SiMe2SiMe2Cl 1, (η5-C5Me4Et)Mo(CO)3SiMe2SiMe2Br 2, (η5-C5Me4Et)Fe(CO)2(SiMe2)6(CO)2Fe(η5-C5Me4Et) 3 and (η5-C5Me4Et)Fe(CO)2(SiMe2)6Br 4 were prepared and characterized. Compound 1 is well crystallized from pentane and its structure has been determined by X-ray diffraction analysis.  相似文献   
86.
The new lithium ionic conductors, thio-LISICON (LIthium SuperIonic CONductor), were found in the ternary Li2S-SiS2-Al2S3 and Li2S-SiS2-P2S5 systems. Their structures of new materials, Li4+xSi1−xAlxS4 and Li4−xSi1−xPxS4 were determined by X-ray Rietveld analysis, and the electric and electrochemical properties were studied by electronic conductivity, ac conductivity and cyclic voltammogram measurements. The structure of the host material, Li4SiS4 is related to the γ-Li3PO4-type structure, and when the Li+ interstitials or Li+ vacancies were created by the partial substitutions of Al3+ or P5+ for Si4+, large increases in conductivity occur. The solid solution member x=0.6 in Li4−xSi1−xPxS4 showed high conductivity of 6.4×10-4 S cm−1 at 27°C with negligible electronic conductivity. The new solid solution, Li4−xSi1−xPxS4, also has high electrochemical stability up to ∼5 V vs Li at room temperature. All-solid-state lithium cells were investigated using the Li3.4Si0.4P0.6S4 electrolyte, LiCoO2 cathode and In anode.  相似文献   
87.
Atomic structure of InAs quantum dots on GaAs   总被引:1,自引:0,他引:1  
In recent years, the self-assembled growth of semiconductor nanostructures, that show quantum size effects, has been of considerable interest. Laser devices operating with self-assembled InAs quantum dots (QDs) embedded in GaAs have been demonstrated. Here, we report on the InAs/GaAs system and raise the question of how the shape of the QDs changes with the orientation of the GaAs substrate. The growth of the InAs QDs is understood in terms of the Stranski–Krastanow growth mode. For modeling the growth process, the shape and atomic structure of the QDs have to be known. This is a difficult task for such embedded entities.

In our approach, InAs is grown by molecular beam epitaxy on GaAs until self-assembled QDs are formed. At this point the growth is interrupted and atomically resolved scanning tunneling microscopy (STM) images are acquired. We used preparation parameters known from the numerous publications on InAs/GaAs. In order to learn more about the self-assemblage process we studied QD formation on different GaAs(0 0 1), (1 1 3)A, and ( )B substrates. From the atomically resolved STM images we could determine the shape of the QDs. The quantum “dots” are generally rather flat entities better characterized as “lenses”. In order to achieve this flatness, the QDs are terminated by high-index bounding facets on low-index substrates and vice versa. Our results will be summarized in comparison with the existing literature.  相似文献   

88.
The mechanism of light-induced transformation in the salicylideneaniline molecule was studied by semiempirical PM3 calculations. The structures and energies of the minima and saddle points (transition states) on the S0, S1 and T1 potential energy hypersurfaces (PESs) were obtained, together with the gradient lines on the PESs. The structure-energy scheme was compared with the experimental findings. According to the results obtained, the following principle processes are observed: fast S1 excited state intramolecular proton transfer (ESIPT), followed by typical ESIPT fluorescence; the formation of two S1 twisted intramolecular charge transfer (TICT) structures which quench the ESIPT fluorescence; the diabatic formation of two ground state metastable coloured “post-TICT” structures responsible for photochromism.  相似文献   
89.
Plasma-induced surface graft copolymerization of acrylic acid on polypropylene non-woven fabric (PP-g-AA) and polypropylene membrane were reported. The extents of grafting were controlled by the plasma and polymerization condition. Hexadecyltrimethyl ammonium bromide was then coupled with the carboxyl group of PP-g-AA to obtain a polyion complex (PIC). At last, CF4 plasma was used to give PICs hydrophobic property. The moisture regain and water-repellency of the processed PICs was investigated. The surfaces were characterized using ATR FT-IR and XPS. The result indicates that the products have very high ability to adsorb moisture, even better than cotton fiber. At the same time, the products show excellent hydrophobic property, which can‘t be wetted by those reagents whose surface tensions were higher than 327mN/m.  相似文献   
90.
The surface and materials science of tin oxide   总被引:3,自引:0,他引:3  
The study of tin oxide is motivated by its applications as a solid state gas sensor material, oxidation catalyst, and transparent conductor. This review describes the physical and chemical properties that make tin oxide a suitable material for these purposes. The emphasis is on surface science studies of single crystal surfaces, but selected studies on powder and polycrystalline films are also incorporated in order to provide connecting points between surface science studies with the broader field of materials science of tin oxide. The key for understanding many aspects of SnO2 surface properties is the dual valency of Sn. The dual valency facilitates a reversible transformation of the surface composition from stoichiometric surfaces with Sn4+ surface cations into a reduced surface with Sn2+ surface cations depending on the oxygen chemical potential of the system. Reduction of the surface modifies the surface electronic structure by formation of Sn 5s derived surface states that lie deep within the band gap and also cause a lowering of the work function. The gas sensing mechanism appears, however, only to be indirectly influenced by the surface composition of SnO2. Critical for triggering a gas response are not the lattice oxygen concentration but chemisorbed (or ionosorbed) oxygen and other molecules with a net electric charge. Band bending induced by charged molecules cause the increase or decrease in surface conductivity responsible for the gas response signal. In most applications tin oxide is modified by additives to either increase the charge carrier concentration by donor atoms, or to increase the gas sensitivity or the catalytic activity by metal additives. Some of the basic concepts by which additives modify the gas sensing and catalytic properties of SnO2 are discussed and the few surface science studies of doped SnO2 are reviewed. Epitaxial SnO2 films may facilitate the surface science studies of doped films in the future. To this end film growth on titania, alumina, and Pt(1 1 1) is reviewed. Thin films on alumina also make promising test systems for probing gas sensing behavior. Molecular adsorption and reaction studies on SnO2 surfaces have been hampered by the challenges of preparing well-characterized surfaces. Nevertheless some experimental and theoretical studies have been performed and are reviewed. Of particular interest in these studies was the influence of the surface composition on its chemical properties. Finally, the variety of recently synthesized tin oxide nanoscopic materials is summarized.  相似文献   
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