改进型单晶炉提拉系统偏心平衡研究

随着光伏行业的快速发展, 对硅单晶的品质和长晶装备的稳定性的要求也不断提高。直拉法是生产硅单晶的主要方法,通过提高单晶炉副室的高度以扩大单晶硅的生产规模。由于副室高度的大幅增加,且单晶炉提拉头质心相对于旋转轴心有一定距离,对单晶炉整体稳定性有较大影响,从而降低了单晶硅的生产质量。针对此问题,对单晶炉建立可靠的力学分析模型,采用数值仿真方法,对单晶炉整体进行动力学响应分析,计算得到副室高度增加后的单晶炉工作时中钨丝绳下端晶棒的运动规律以及最大摆动幅度,为改进设计提供依据。数值仿真分析表明提高单晶炉副室高度后,提拉头较大的质心偏心是单晶炉提拉系统发生摆动的主要原因。在此基础上提出在提拉头上添加质心调节装置,通过控制系统调节可保证提拉头质心位置在旋转轴线上以降低提拉系统的摆动。     

Synthesis,Characterization and Application of Amine-Functionalized Hierarchically Micro-Mesoporous Silicon Composites for CO2 Capture in Flue Gas

An efficient CO₂ adsorbent with a hierarchically micro-mesoporous structure and a large number of amine groups was fabricated by a two-step synthesis technique. Its structural properties, surface groups, thermal stability and CO₂ adsorption performance were fully investigated. The analysis results show that the prepared CO₂ adsorbent has a specific hierarchically micro-mesoporous structure and highly uniformly dispersed amine groups that are favorable for the adsorption of CO₂. At the same time, the CO₂ adsorption capacity of the prepared adsorbent can reach a maximum of 3.32 mmol-CO₂/g-adsorbent in the actual flue gas temperature range of 303–343 K. In addition, the kinetic analysis results indicate that both the adsorption process and the desorption process have rapid adsorption/desorption rates. Finally, the fitting of the CO₂ adsorption/desorption experimental data by Avrami’s fractional kinetic model shows that the CO₂ adsorption rate is mainly controlled by the intra-particle diffusion rate, and the temperature has little effect on the adsorption rate.     

不同形貌氮化硅纳米结构的制备与表征

分别通过VLS和VS生长机制得到了Si3N4纳米线和纳米带.产物经X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)等表征手段进行了分析.FTIR图谱表明它们在800～1100cm-1的波数范围内有一个宽的吸收带,这是Si-N键伸缩振动模式的典型吸收带.它们的室温光致发光图谱显示,在420nm左右都有一很强的发射带,表明其将在纳米光电器件中有潜在应用.另外,Si3N4纳米线发光峰与纳米带的发光相比有少许蓝移(蓝移约4nm),这可能和晶须尺寸的少许差别有关.至于纳米带的发光强度大于纳米线的原因,可能是纳米带的比表面积相对较大,有利于悬键的形成,从而导致材料结构内缺陷的浓度较大.     

Wafer thickness optimization for silicon solar cells of heterogeneous material quality

In this Letter, we introduce a method of calculating the optimal wafer thickness for silicon solar cells with multicrystalline bulk material. The optimal thickness depends on the relation of bulk recombination to surface recombination and the light trapping. For multicrystalline silicon bulk recombination strongly varies laterally and with injection level, which complicates the calculations. A thickness optimization using the “Efficiency Limiting Bulk Recombination Analysis” (ELBA) takes all these effects correctly into account. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Иследоваиие Иследоваиие иоверхиостеӥ

Die zunehmende Industrialisierung der landwirtschaftlichen Production bei höheren Qualitätsanforderungen verlangt objective und hochempfindliche Kontrollverfahren.

Zur zerstörungsfreien Ermittlung innerer Qualitätsmängel an Früchten, z.B. Kartoffelknollen, können lichtoptische Verfahren wegen der starken Streuung nicht umfassend eingesetzt werden. Deshulb wurde unter Einsatz weicher Gammastrahlung (²⁴¹ Am) versucht, “trockene” Hohlstellen, insbesondere bedingt durch Hohlherzigkeit, in Kartoffelknollen zu erkennen. Es konnte gezeigt werden, daβbei einem Erkennungsfehler von etwa 13% diese Mängel (ab ca. 5 mm Durchmenser) zu erkennen sind, auch wenn die Knollen nur in einer durch die Knollenmitte verlaufenden Ebene durchstrahlt werden.     

MINIMAL SURFACES IN 3—DIMENSIONAL SOLVABLE LIE GROUPS

The author studies minimal surfaces in 3-dimensional solvable Lie groups with left invariant Riemannian metrics. A Weierstraβ type integral representation formula for minimal surfaces is obtained.     

Many body effects in the electronic and optical properties of the (1 1 1) surface of diamond

The (1 1 1) face is the cleavage surface of diamond. Understanding its properties is very important for the growing technological interest on the chemistry of diamond surfaces. Within DFT the most stable reconstruction is the Pandey chain model, the atoms on the chain being neither buckled nor dimerised. However this geometry gives rise to a semi metallic band structure in contrast with experimental findings that show the presence of a gap ranging from 0.5 to 2 eV. Here we show that the same equilibrium geometry and thus the same metallic band structure is found relaxing the surface using screened exchange (sX) or Hartree-Fock (HF) functionals. We will discuss in detail how breaking the equivalence of the atoms on the chain affects the band structure and we will show that a buckling would yield a semiconducting surface, but is energetically unfavorable. A semiconducting character can be restored, within the equilibrium geometry, if quasiparticle corrections are carefully included within an iterative GW scheme. The result of the theoretical reflectance anisotropy spectra (RAS) at a DFT-RPA level are also presented and discussed. As expected, a strong anisotropy signal is found at low energies due to transitions between surface states inside the fundamental gap.     

Morphological evidence for surface pre-melting on Si(1 1 1)

We present what we believe to be the first morphological evidence for the occurrence of surface pre-melting on the Si(1 1 1) surface. Our results complement the extensive previous evidence from diffraction and ion scattering techniques for the presence of pre-melted (liquid-like) layers on Si(1 1 1) below the bulk melting temperature and also suggest how atomic steps are involved in the initiation of such layers. Our results are based on atomic force microscopy studies of morphologies that are preserved when surfaces are annealed in a range of high temperatures and then rapidly cooled to room temperature for observation. A unique feature of the experiments is the use of specially prepared atomically flat or very low step density surfaces; this allows us to see how the liquid-like morphologies are associated with the steps and also allows the high temperature structures to survive the cooling process without being absorbed into the steps which normally would exist on a surface vicinal to (1 1 1). Quenched-in structures ascribed to pre-melting also act as sinks for diffusing ‘excess’ adatoms generated by the (1 × 1) to (7 × 7) transition and this leads to the formation of dendritic islands.     

Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10⁻⁷ Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures ≤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.