Mass spectrometric analysis of low molecular mass polyesters by laser desorption/ionization on porous silicon

A low molecular mass polyester was analyzed by desorption/ionization on porous silicon (DIOS) mass spectrometry. The results were compared with those of matrix-assisted laser desorption ionization (MALDI) mass spectrometry using matrixes of alpha-cyano-4-hydroxycinnamic acid (CHCA) and 10,15,20-tetrakis(pentafluorophenyl)porphyrin (F20TPP). The CHCA matrix was not suitable for characterization of low molecular mass components of the polyester because the matrix-related ions interfered with the component ions. On the other hand, the F20TPP matrix showed no interference because no matrix-related ions appeared below m/z 822. However, the solvent selection for determining optimal conditions of sample preparation was limited, because F20TPP does not dissolve readily in any of the available organic solvents. In the DIOS spectra, the polymer ions were observed at high sensitivity without a contaminating ion. No matrix is needed for DIOS spectra of low molecular mass polyesters, facilitating sample preparation and selectivity of a precursor ion in post-source decay measurements.     

XPS,AFM, ATR and TPD evidence for terraced,dihydrogen terminated, 1×1 (100) silicon

Heating (100) silicon at high temperature (say, higher than 850 °C) in H₂, cooling to 670–700 °C in the same ambient, and quenching to room temperature in N₂ results in environmentally robust, terraced 1 × 1 (100) SiH₂. Evidence for this conclusion is based on angle‐resolved x‐ray photoelectron spectroscopy, atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, and reflection high‐energy electron diffraction. Copyright © 2005 John Wiley & Sons, Ltd.     

Synthesis,molecular and crystal structures,and characteristic features of electronic structures of salicylamide-based B,Si-containing chelates

The reaction of 4-(2-hydroxybenzoyl)-2,2,6,6-tetramethyl-2,6-disilamorpholine with BF₃Et₂O afforded (O-B)-chelate 4-[2-(difluoroboroxy)benzoyl]-2,2,6,6-tetramethyl-2,6-disilamorpholine. Treatment of the latter with BF₃Et₂O or SOCl₂ gave rise to products of the disilamorpholine ring opening, viz., (O-B) chelate 2-(difluoroboroxy)-N,N-bis(dimethylfluorosilylmethyl)benzamide or 2-(difluoroboroxy)-N, N-bis(dimethylchlorosilylmethyl)benzamide, respectively. The structures of the compounds synthesized were confirmed by X-ray diffraction analysis and ¹H, ¹³C, and ²⁹Si NMR spectroscopy. High-precision X-ray diffraction study and quantum-chemical calculations demonstrated that the coordination OSi bond is absent in the two last-mentioned compounds.Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1846–1853, September, 2004.     

SiO_2负载钼催化剂的合成及其催化乙烯二聚、同系化和歧化的反应性能

从单核及双核二甲胺钼络合物出发,制备了SiO_2负载的钼催化剂。程序升温分解实验(TPDE)及红外测试表明,双核钼络合物与SiO_2作用生成双钼中心物种,此物种可催化乙烯的二聚反应。280℃活化后此双钼中心物种变成单钼中心物种,单钼物种只催化乙烯的同系化及歧化反应。     

Cleavage of the Fe-Fe Bond of(Me_2SiSiMe_2)[η~5-C_5H_4Fe(CO)_2]_2 with Na/Hg and Molecular Structure of the Ring-Opened Complex

The reaction of the title cyclic complex(1) with sodium amal-gam in THF resulted in the expected cleavage of the Fe--Febond to afford bis-sodium salt (Me_2SiSiMe_2) [η~5-C_5H_4Fe(CO)_2Na]_2 (4). The latter was not isolated and was used di-rectly to react with MeI, PhCH_2Cl, CH_3C(O)Cl, PhC(O)Cl,Cy_3SnCl (Cy=cyclohexyl) or Ph_3SnCl to afford correspondingring-opened derivatives (Me_2SiSiMe_2) [η~5-C_5H_4Fe(CO)_2R]_2[5, R=Me; 6, R=PhCH_2; 7, R=CH_3C(O); 8, R=PhC     

Influence of channeling effects on ion distribution and damage profiles during high energy ion implantation in Si

Nitrogen implantation has been performed in silicon [001] crystals in carefully controlled alignment conditions. The channeling effects are clearly evident when implanting in [001] and [011] directions at energies ranging from 0.6 to 1.4 MeV. Both ion distribution and damage profiles are strongly influenced by channeling effects during ion implantation. The angular region around the [001] direction has been also investigated by implanting at small angles with respect to the axis. The same kind of study has been performed by implanting at different angles with respect to the planar (011) direction. The ion distributions (investigated by SIMS) show a strong dependence upon the alignment conditions. Moreover in high energy ion implantation, the lattice damage is located deep inside the crystal, leaving the surface layer almost unperturbed. The channeling effects on the damage production have been investigated by double crystal diffraction (DCD) in the low-dose regime and by RBS-channeling experiments (after implantation at doses greater than 1 × 10¹⁵ cm^–2) and for different ion alignment conditions.A big increase in the ion ranges and a strong reduction in the lattice damage is evident when implanting along major crystal axes. No saturatíon of the lattice damage and of the channelled component of the beam has been detected if the implantation is performed parallel to the [011] axis.     

聚碳硅烷／纳米镍粉的热裂解

聚碳硅烷／纳米镍粉的热裂解王军＊宋永才冯春祥（国防科学技术大学材料工程与应用化学系长沙４１００７３）关键词聚碳硅烷，纳米材料，镍，热解，碳化硅纤维１９９６－０９－１７收稿，１９９６－１２－１３修回国家攻关计划和“８６３”高技术资助项目聚碳硅烷（ＰＣＳ...