Formation of a crosslinked POSS network by an unusual hydrosilylation: Thermo‐oxidative stabilization of the α‐cristobalite phase in its amorphous regions

A semicrystalline inorganic–organic hybrid crosslinked network containing polyhedral oligomeric silsesquioxane (POSS) cores was constructed by the unusual hydrosilylation of the terminal vinyl groups of an internal acetylene‐containing silane linker by a POSS monomer. Products from the thermal treatments of this network in either argon or air at 250, 550, and 1000 °C, respectively, were characterized by Fourier transform infrared, Solid‐state ¹³C and ²⁹Si magic angle spinning NMR, X‐ray diffraction and XPS analyses. The highly symmetrically functionalized POSS silica clusters, in the fluorite silica phase, in the network were found to remain unchanged on thermal treatment possibly due to the shielding of the silica core by the functionalities and a cancellation of thermal stresses on the silica core. Stabilization of the metastable α‐cristobalite phase, which is typically formed on cooling by a β‐ to α‐transition of the β‐cristobalite phase formed above 1400 °C, was observed in the amorphous regions in the network sample treated only to 1000 °C in air. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Liquid hydridosilane precursor prepared from cyclopentasilane via sonication at low temperatures without the action of light

We report on a liquid hydridosilane precursor ink prepared via the ultrasonically induced ring-opening polymerisation of cyclopentasilane (Si₅H₁₀) without irradiation by ultraviolet light. The sonication is carried out in N₂ atmosphere at temperatures between 20 and 75 °C. We use size exclusion chromatography (SEC) to show polymer growth and estimate molecular mass with increasing sonication time. In combination with UV–vis transmission measurements, further SEC analysis is used to compare solutions subjected to either purely thermal or ultrasonic treatment at the same process temperature and for the same duration. Our findings provide strong evidence showing that the initiation of the polymerisation is sonocatalytic in nature and not thermic due to the macroscopic temperature of the solution. The liquid precursor is used to produce homogeneous hydrogenated amorphous silicon (a-Si:H) thin films via spin coating and pyrolytic conversion. The optoelectronic properties of the films are subsequently improved by hydrogen radical treatment. Fourier transform infrared spectroscopy (FTIR) is used to determine a compact film morphology and electrical conductivity measurements show that the layers attain a light-to-dark photosensitivity ratio of 2 × 10³ making them suitable for application in optoelectronic devices.     

Fabrication and characterization of zinc oxide anti-reflective coating on flexible thin film microcrystalline silicon solar cell

This paper studies the fabrication and characterization of 80 nm zinc oxide anti-reflective coating (ARC) on flexible 1.3 μm thin film microcrystalline silicon (μc-Si) solar cell. High resolution X-ray diffraction (HR-XRD) shows a c-axis oriented ZnO (0 0 2) peak (hexagonal crystal structure) at 34.3° with full width at half maximum (FWHM) of 0.3936°. Atomic force microscope (AFM) measures high surface roughness root-mean-square (RMS) of the layer (50.76 nm) which suggests scattering of the incident light at the front surface of the solar cell. UV–vis spectrophotometer illustrates that ZnO ARC has optical transmittance of more than 80% in the visible and infra-red (IR) regions and corresponds to band gap (E_g) of 3.3 eV as derived from Tauc equation. Inclusion of ZnO ARC successfully suppresses surface reflectance from the cell to 2% (at 600 nm) due to refractive index grading between the Si and the ZnO besides quarter-wavelength (λ/4) destructive interference effect. The reduced reflectance and effective scattering effect of the incident light at the front side of the cell are believed to be the reasons why short-circuit current (I_sc) and efficiency (η) of the cell improve.     

Performance of a silicon monochromator under high heat load

The performance of a cryogenically cooled double‐crystal silicon monochromator was studied under high‐heat‐load conditions with total absorbed powers and power densities ranging from 8 to 780 W and from 8 to 240 W mm^?2, respectively. When the temperature of the first crystal is maintained close to the temperature of zero thermal expansion of silicon, the monochromator shows nearly ideal performance with a thermal slope error of 0.6 µrad. By tuning the size of the first slit, the regime of the ideal performance can be maintained over a wide range of heat loads, i.e. from power densities of 110 W mm^?2 (at total absorbed power of 510 W) to 240 W mm^?2 (at total absorbed power of 240 W).